AON3601 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AON3601 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3601
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 30V
ID = 6.6A (VGS=10V)
RDS(ON)
The AON3601 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in power inverters, and other
p-channel
-30V
-5A (VGS = -10V)
RDS(ON)
applications.Standard Product AON3601 is Pb-
free (meets ROHS & Sony 259 specifications).
AON3601L is a Green Product ordering
option. AON3601 and AON3601L are
electrically identical.
< 29mΩ (VGS=10V)
< 42mΩ (VGS=4.5V)
< 52mΩ (VGS = -10V)
< 72mΩ (VGS = -4.5V)
DFN 3x3
D1
D2
Top View
Bottom View
S2
G2
D2
D2
S1
G1
D1
G2
D1
G1
S1
S2
p-channel
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
±20
-30
±20
V
V
VGS
TA=25°C
TA=70°C
6.6
-5
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
5.6
-4.2
IDM
30
-20
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
-55 to 150
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
50
90
43
45
80
40
Max Units
62.5 °C/W
110 °C/W
53 °C/W
62.5 °C/W
110 °C/W
50 °C/W
Maximum Junction-to-Ambient A
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
AON3601
N-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
30
V
VDS=24V, VGS=0V
0.004
1
5
IDSS
Zero Gate Voltage Drain Current
μA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=250μA
GS=4.5V, VDS=5V
GS=10V, ID=6.6A
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
20
A
24.3
34
29
41
42
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.5A
34.5
15.4
0.78
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=6.6A
IS=1A
10
S
V
A
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
680
102
77
820
3.6
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
3
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.84
6.74
1.82
3.2
17
nC
nC
nC
nC
ns
Qg(4.5V)
8.1
V
GS=10V, VDS=15V, ID=6.6A
Qgs
Qgd
tD(on)
tr
4.6
VGS=10V, VDS=15V, RL=2.3Ω,
4.1
ns
RGEN=3Ω
tD(off)
tf
20.6
5.2
ns
ns
trr
IF=6.6A, dI/dt=100A/μs
IF=6.6A, dI/dt=100A/μs
16.5
7.8
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0: April 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AON3601
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
30
25
20
15
10
5
10V
6V
5V
4.5V
VDS=5V
4V
3.5V
125°C
VGS=3V
4
25°C
3.5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
VDS (Volts)
VGS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS=10V
ID=6.6A
50
40
30
20
10
VGS=4.5V
ID=5.5A
VGS=4.5V
0.9
0.8
VGS=10V
0
50
100
150
200
0
5
10
15
20
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
50
40
30
20
10
ID=5A
125°C
125°C
25°C
0.6
25°C
0.0
0.2
0.4
0.8
1.0
V
SD (Volts)
2
4
6
8
10
Figure 6: Body diode characteristics
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AON3601
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
900
10
f=1MHz
VGS=0V
VDS=15V
ID=6.6A
800
700
600
500
400
300
200
100
0
8
6
4
2
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge characteristics
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
RDS(ON)
limited
100μs
1ms
10μs
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AON3601
P-CHANNEL: Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250μA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
μA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250μA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-5A
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-2
-20
A
39
54
52
70
72
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
V
V
GS=-4.5V, ID=-4.2A
DS=-5V, ID=-5A
60
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
6
8.6
-0.79
IS=-1A,VGS=0V
-1
V
Maximum Body-Diode Continuous Current
-2.8
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
700
120
75
900
15
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
10
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
14.7
7.6
2
19
10
nC
nC
nC
nC
ns
Qg (4.5V)
V
GS=-10V, VDS=-15V, ID=-5A
Qgs
Qgd
tD(on)
tr
3.8
8.3
5
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
ns
tD(off)
tf
29
ns
14
ns
trr
IF=-5A, dI/dt=100A/μs
IF=-5A, dI/dt=100A/μs
23.5
13.4
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 0: April 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AON3601
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
-5V
-10V
-6V
VDS=-5V
-4.5V
-4V
6
-3.5V
4
125°C
VGS=-3V
2
25°C
-2.5V
4.00
0
0
0.00
1.00
2.00
3.00
5.00
0
1
2
3
4
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
100
80
60
40
20
1.60E+00
1.40E+00
1.20E+00
1.00E+00
8.00E-01
VGS=-4.5V
ID=-4.2A
VGS=-10V
VGS=-4.5V
VGS=-10V
ID=-5A
1
3
5
7
9
0
25
50
75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
140
120
100
80
ID=-5A
125°C
125°C
25°C
60
25°C
40
1E-06
0.0
20
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AON3601
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
1000
800
600
400
200
0
10
8
VDS=-15V
ID=-5A
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
12
14
16
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10μs
RDS(ON)
100μs
limited
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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