AO4423L [AOS]
暂无描述;
| 型号： | AO4423L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 暂无描述 |
| 文件： | 总4页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4423
30V P-Channel MOSFET
General Description
Product Summary
The AO4423 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
VDS (V) = -30V
ID = -17A
RDS(ON) < 6.2mΩ
RDS(ON) < 7.2mΩ
(VGS = -20V)
(VGS = -20V)
(VGS = -10V)
ESD Protected
100% UIS tested
100% Rg tested (note *)
AO4423
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
±1
µA
µA
V
IGSS
Gate-Body leakage current
±10
-2.6
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-1.5
-2.1
V
GS=-10V, VDS=-5V
-182
A
VGS=-20V, ID=-15A
5.1
7.4
6.2
9
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
VGS=-6V, ID=-10A
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
5.9
7.2
9.5
mΩ
mΩ
S
7.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
48
-0.71
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2527
583
397
4.3
3033
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
556
6.4
V
2.1
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
47
8
57
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-15A
14
12
8
V
GS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
tD(off)
tf
54
87
26.1
12.3
trr
IF=-15A, dI/dt=100A/µs
IF=-15A, dI/dt=100A/µs
32
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)
Rev10: May. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd,com
AO4423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
-4.5V
-6V
VDS=-5V
-4V
-10V
125°C
25°C
-3.5V
VGS=-3V
0
1
2
3
4
5
2
2.5
3
3.5
-VGS(Volts)
4
4.5
5
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
10
8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
VGS=-20V
ID = -15A
VGS=-6V
VGS=-10V
ID = -15A
VGS=-10V
VGS=-20V
6
VGS=-6V
ID = -10A
4
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
16
ID=-15A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
14
12
10
8
125°C
125°C
6
25°C
25°C
4
4
8
12
16
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd,com
AO4423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
3500
3000
2500
2000
1500
1000
500
10
8
VDS=-15V
ID=-15A
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
0
10
20
30
40
50
-Qg (nC)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000.0
10000
1000
100
10
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100.0
10.0
1.0
10µs
100µs
1ms
10ms
1s
0.1s
10s
0.1
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.001
0.1
10
1000
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
-V (Volts)
Figure 9: MaximumDFSorward Biased Safe
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
PD
0.1
0.01
Ton
T
Single Pulse
Pulse Width (s)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd,com
相关型号：
©2020 ICPDF网 联系我们和版权申明