AM2306NE [ANALOGPOWER]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | AM2306NE |
| 厂家： | 
ANALOG POWER |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Analog Power
AM2306NE
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
3.5
3.0
58 @ VGS = 10V
82 @ VGS = 4.5V
30
D
SOT-23
Top View
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SOT-23 Surface Mount Package
Saves Board Space
G
G
D
•
•
High power and current handling capability
applications
S
Low side high current DC-DC Converter ESD ProtecteSd
2000V
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
Limit
30
±20
3.5
2.8
16
1.25
1.3
0.8
Units
Drain-Source Voltage
Gate-Source Voltage
V
TA=25oC
TA=70oC
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
100
t <= 10 sec
Steady-State
Maximum Junction-to-Ambienta
166
oC/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM2306E_A
PRELIMINARY
Analog Power
AM2306NE
Limits
Min Typ Max
Parameter
Symbol
Test Conditions
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1
V
±100 nA
V
DS = 24 V, VGS = 0 V
1
25
IDSS
Zero Gate Voltage Drain Current
uA
VDS = 24 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 10 V
On-State Drain CurrentA
ID(on)
6
A
V
V
GS = 10 V, ID = 3.5 A
GS = 4.5 V, ID = 3 A
58
82
Drain-Source On-ResistanceA
rDS(on)
mΩ
Forward TranconductanceA
Diode Forward Voltage
gfs
VSD
VDS = 15 V, ID = 3.5 A
IS = 2.3 A, VGS = 0 V
6.9
0.8
S
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
2.2
0.5
0.8
16
5
23
3
V
DS = 15 V, VGS = 4.5 V,
nC
nS
ID = 3.5 A
VDD = 25 V, RL = 25 Ω , I
GEN = 10 V
D
= 1 A,
V
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
Publication Order Number:
DS-AM2306E_A
PRELIMINARY
Analog Power
AM2306NE
Typical Electrical Characteristics (N-Channel)
40
30
20
10
0
30
25
20
15
10
5
TA = -55oC
VDS = 5V
25oC
VGS = 10V
6.0V
5.0V
125oC
4.0V
3.0V
0
0
1
2
3
4
5
0.5
1.5
2.5
3.5
4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
700
600
500
400
300
200
100
0
f = 1MHz
VGS
=
VGS
2.5
2
CISS
4.5V
1.5
1
10V
COSS
CRSS
0.5
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
1.6
10
8
VGS = 10V
ID = 7A
1.4
1.2
6
1.0
4
0.8
0.6
2
0
-50
-25
0
25
50
75
100 125 150
0
1
2
3
4
5
TJ Juncation Temperature (
)
Qg, Gate Charge (nC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
3
Publication Order Number:
DS-AM2306E_A
PRELIMINARY
Analog Power
AM2306NE
Typical Electrical Characteristics (N-Channel)
100
10
0.1
0.08
0.06
0.04
0.02
0
VGS = 0V
TA = 125oC
1
25oC
0.1
0.01
0.001
0.0001
TA = 25oC
2
4
6
8
GS, GATE TO SOURCE VOLTAGE (V)
10
V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
2.2
2
50
SINGLE PULSE
VDS = VGS
ID = -250mA
RqJA = 125oC/W
TA = 25oC
40
1.8
1.6
1.4
1.2
1
30
20
10
0
-50 -25
0
25 50
75 100 125 150 175
0.001
0.01
0.1
1
10
100
t1, TIME (SEC)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
0.2
0.1
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.0
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
SINGLE P ULSE
0.001
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (s ec)
Figure 11. Transient Thermal Response Curve
4
Publication Order Number:
DS-AM2306E_A
PRELIMINARY
Analog Power
AM2306NE
Package Information
5
Publication Order Number:
DS-AM2306E_A
PRELIMINARY
相关型号：
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