AM2308NE [ANALOGPOWER]
N-Channel 30-V (D-S) MOSFET; N通道30 -V （D -S ）的MOSFET
| 型号： | AM2308NE |
| 厂家： | 
ANALOG POWER |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Analog Power
AM2308NE
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
60 @ VGS = 4.5V
82 @ VGS = 2.5V
3.5
3.0
30
•
•
Low rDS(on) provides higher efficiency and
extends battery life
G
S
Low thermal impedance copper leadframe
SOT-23 saves board space
D
•
•
Fast switching speed
High performance trench technology
ESD Protected
2000V
ABSOLUTEMAXIMUMRATINGS(T =25oCUNLESSOTHERWISENOTED)
A
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-SourceVoltage
VDS
VGS
30
12
V
o
TA=25C
o
TA=70C
3.5
2.8
ContinuousDrainCurrenta
PulsedDrainCurrentb
ID
A
IDM
IS
16
a
A
ContinuousSourceCurrent(Diode Conduction)
1.25
1.25
0.8
o
TA=25C
o
TA=70C
a
PD
W
PowerDissipation
oC
OperatingJunctionandStorageTemperatureRange
T,T -55to150
J stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
t <= 10 sec
Steady-State
100
Maximum Junction-to-Ambienta
166
oC/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM2308NE_B
PRELIMINARY
Analog Power
AM2308NE
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Unit
Min Typ Max
Static
V
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 12 V
VDS = 24 V, VGS = 0 V
0.6
10
1
uA
Zero Gate Voltage Drain Current
IDSS
uA
VDS = 24 V, VGS = 0 V, TJ = 55oC
25
On-State Drain CurrentA
ID(on)
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.5 A
VGS = 2.5 V, ID = 3 A
6
A
60
82
Drain-Source On-ResistanceA
rDS(on)
mꢀ
Forward TranconductanceA
Diode Forward Voltage
gfs
VDS = 15 V, ID = 3.5 A
IS = 2.3 A, VGS = 0 V
6.9
0.8
S
VSD
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
6.3
0.9
1.9
16
5
VDS = 15 V, VGS = 2.5 V,
ID = 3.5 A
nC
nS
D
VDD = 25 V, RL = 25 ꢀ , I = 1 A,
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
23
3
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
Publication Order Number:
DS-AM2308NE_B
PRELIMINARY
Analog Power
AM2308NE
Typical Electrical Characteristics (N-Channel)
20
18
16
20
15
10
5
14
12
10
8
4.5V
25C
2.5V
6
0
4
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
VDS- Drain-to-Source Voltage (V)
2
0
0
1
2
3
4
VGS Gate to Source Voltage (V)
Output Characteristics
Transfer Characteristics
2400
2000
1600
1200
800
1.4
1.2
1
CISS
4.5V
400
10V
COSS
CRSS
0
0.8
0
5
10
15
20
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
8
1.6
VGS = 4.5V
1.4
1.2
1
6
4
0.8
0.6
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
T
J - Junction Temperature (oC)
Gate charge ( nC )
Gate Charge
On-Resistance vs. Junction Temperature
3
Publication Order Number:
DS-AM2308NE_B
PRELIMINARY
Analog Power
AM2308NE
Typical Electrical Characteristics (N-Channel)
100
10
0.07
0.06
0.05
0.04
0.03
0.02
0.01
TA = 125oC
1
25oC
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
2.5
3
3.5
4
4.5
5
VSD - Source-to-DrainVoltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
30
1.8
1.6
ID = 250
A
µ
20
10
0
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
-50
-25
0
25
50
75
100
125
150
T
J - Temperature (oC)
Time (sec)
Threshold Voltage
Single Pulse Power
1
D=0.5
Rθ (t) = r(t) * Rθ
JA
JA
0.2
0.1
R
JA = 125 °C/W
θ
0.1
0.01
0.05
P(pk
0.02
0.01
t1
t2
SINGLEPULSE
TJ - TA = P*
RθJA(t)
Duty Cycle, D = t1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
Publication Order Number:
DS-AM2308NE_B
PRELIMINARY
Analog Power
AM2308NE
Package Information
5
Publication Order Number:
DS-AM2308NE_B
PRELIMINARY
相关型号：
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