AM2309E3SVR [AITSEMI]
MOSFET 20V P-CHANNEL ENHANCEMENT MODE;
| 型号： | AM2309E3SVR |
| 厂家： | 
AiT Semiconductor |
| 描述： | MOSFET 20V P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总7页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2309 is available in SOT-23S package.
VDS = -20V
R
R
DS(ON), VGS@-4.5V, IDS@-2.8A =100mΩ
DS(ON), VGS@-2.5V, IDS@-2.0A =150mΩ
Advanced trench process technology
High Density Cell Design For Ultra Low
On-Resistance
Fully Characterized Avalanche Voltage and
Current
Improved Shoot-Through FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Available in SOT-23S Package
ORDERING INFORMATION
P CHANNEL MOSFET
Package Type
SOT-23S
Part Number
AM2309E3SR
AM2309E3SVR
E3S
V: Halogen free Package
R: Tape & Reel
Note
SPQ: 3,000pcs/Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.0
-AUG 2016 RELEASED -
- 1 -
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless otherwise noted
VDS, Drain-Source Voltage
-20V
±8V
VGS, Gate-Source Voltage
ID, Continuous, Drain Current-
IDM, Pulsed Drain CurrentNOTE1
-2.3A
-8A
TA = 25°C
TA = 75°C
0.9W
PD, Maximum Power Dissipation
0.57W
TJ, TSTG, Operating Junction and Storage Temperature Range
-55°C ~150°C
R
θJC, Junction-to-Case Thermal Resistance
R
θJA, Junction-to-Ambient Thermal Resistance (PCB mounted)NOTE2
140°C/W
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: Repetitive Rating: Pulse width limited by the Maximum junction temperature.
NOTE2: 1-in2 2oz Cu PCB board
NOTE3: Guaranteed by design; not subject to production testing
REV1.0
-AUG 2016 RELEASED -
- 2 -
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250μA
-20
-
69
83
-
-
100
150
-0.95
-1
V
VGS=-4.5V,ID=-2.8A
VGS=-2.5V,ID=-2.0A
VDS=VGS,ID=-250μA
VDS=-9.6V,VGS=0V
VGS=±8V,VDS=0V
-
Drain-Source On-State
Resistance
RDS(ON)
mΩ
-
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
VGS(th)
IDSS
IGSS
Rg
-0.45
V
μA
nA
Ω
-
-
-
-
-
-
±100
-
-
Forward Transconductance
Dynamic NOTE 3
gFS
VDS=-5V,ID=-4.0A
6.5
-
S
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
-
-
-
-
15.23
5.49
-
-
-
-
-
-
-
-
-
-
VDS=-6V,ID=-2.8A,
VGS=-4.5V
Gate-Source Charge
Gate-Drain Charge
nC
ns
2.74
Turn-on Delay Time
Turn-on Rise Time
17.28
3.73
VDD=-6V,RL=6Ω
ΙD = −1Α,VGEN=-4.5V,
RG=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
td(off)
tf
36.05
6.19
Input Capacitance
Clss
Coss
Crss
882.51
145.54
97.26
VDS=-6V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
pF
IS
-
-
-
-2.4
-1.2
A
V
VSD
IS=-0.75A, VGS=0V
-0.8
NOTE: Pulse test: pulse width <= 300μs, duty cycle<= 2%
REV1.0
-AUG 2016 RELEASED -
- 3 -
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
TYPICAL PERFORMANCE CHARACTERISTICS
1.
3.
5.
Transfer Characteristics
On–Resistance versus Drain Current
Gate Charge
2.
4.
6.
On–Region Characteristics
On-Resistance vs. Gate-to-Source Voltage
Capacitance
REV1.0
-AUG 2016 RELEASED -
- 4 -
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
7.
On-Resistance vs. Junction Temperature
8.
VGS(th) vs. Junction Temperature
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1. Switching Test Circuit
2. Switching Waveforms
REV1.0
-AUG 2016 RELEASED -
- 5 -
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm)
Millimeters
Inches
Max
Symbol
Min
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
Max
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
Min
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
K
L
S
V
REV1.0
-AUG 2016 RELEASED -
- 6 -
AM2309
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
20V P-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
-AUG 2016 RELEASED -
- 7 -
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