AM2310 [AITSEMI]
MOSFET N-CHANNEL ENHANCEMENT MODE;
| 型号： | AM2310 |
| 厂家： | 
AiT Semiconductor |
| 描述： | MOSFET N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总6页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2310
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2310 is available in SOT-23S package.
18V/3.5A,
R
R
DS(ON) = 80mΩ(MAX) @VGS = 4.5V.
DS(ON) = 90mΩ(MAX) @VGS = 2.5V.
ORDERING INFORMATION
Super High dense cell design for extremely low
RDS(ON)
.
Reliable and Rugged.
Package Type
Part Number
AM2310E3SR
AM2310E3SVR
Available in SOT-23S Package
SOT-23S
E3S
SPQ: 3,000pcs/Reel
APPLICATION
V: Halogen free Package
R: Tape & Reel
Note
Power Management
Portable Equipment and Battery Powered
Systems.
AiT provides all RoHS products
TYPICAL APPLICATION
REV1.0
- AUG 2016 RELEASED -
- 1 -
AM2310
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV1.0
- AUG 2016 RELEASED -
- 2 -
AM2310
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA=25°C, unless otherwise noted
VDS, Drain-Source Voltage
18V
±8V
3.5A
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA=25°C, unless otherwise noted
Parameter
Off Characteristics
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS VGS=0V, ID=250μA
18
-
-
-
-
-
-
V
IDSS
IGSSF
IGSSR
VDS=12V, VGS=0V
VGS=8V, VDS=0V
VGS=8V, VDS=0V
1
μA
nA
nA
-
100
-100
-
Gate Threshold Voltage
VGS(th) VGS=VDS, ID=250μA
0.4
-
1.3
80
90
V
VGS=4.5V, ID=3.5A
RDS(ON)
-
-
70
75
mΩ
mΩ
Static Drain-Source On-Resistance
VGS=2.5V, ID=3.1A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=0.94A
-
-
1.2
V
REV1.0
- AUG 2016 RELEASED -
- 3 -
AM2310
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
TYPICAL PERFORMANCE CHARACTERISTICS
1.
3.
5.
Output Characteristics
2.
Transfer Characteristics
Breakdown Voltage Variation with Temperature 4.
Gate Threshold Variation with Temperature
On-Resistance Variation with Temperature
6.
On-Resistance vs. Drain Current
REV1.0
- AUG 2016 RELEASED -
- 4 -
AM2310
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
7.
On-Resistance vs. Gate-to-Source Voltage
8.
Source-Drain Diode Forward Voltage
PACKAGE INFORMATION
Dimension in SOT-23S (Unit: mm)
REV1.0
- AUG 2016 RELEASED -
- 5 -
AM2310
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
N-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- AUG 2016 RELEASED -
- 6 -
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