AM2308E3R [AITSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM2308E3R |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
AM2308 is available in a SOT-23 package.
60V/2.7A,
RDS(ON)= 104mΩ(max.) @ VGS= 10V
RDS(ON)= 130mΩ(max.) @ VGS= 4.5V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Available in a SOT-23 package.
ORDERING INFORMATION
APPLICATION
Power Management in DC/AC Inverter
Systems.
Package Type
SOT-23
Part Number
AM2308E3R
AM2308E3VR
E3
PIN DESCRIPTION
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
Suffix ꢀ V ꢀ means Halogen free Package
N-Channel MOSFET
REV1.0
- DEC 2013 RELEASED -
- 1 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV1.0
- DEC 2013 RELEASED -
- 2 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDSS, Drain-Source Voltage
60V
±20V
VGSS, Gate-Source Voltage
TJ, Maximum Junction Temperature
TSTG, Storage Temperature Range
IS, Diode Continuous Forward Current
150℃
-55℃~150℃
1.5A
TA=25℃
TA=25℃
TA=70℃
TA=25℃
TA=25oC
TA=70℃
t ≤ 10s
2.7A
ID, Continuous Drain Current
IDM NOTE1, Pulsed Drain Current
PD, Maximum Power Dissipation
2.2A
11A
1.56W
1W
80°C/W
125°C/W
5A
RθJANOTE3, Thermal Resistance-Junction to Ambient
Steady state
IAS NOTE2, Avalanche Current, Single pulse (L=0.5mH)
EAS NOTE2, Avalanche Energy, Single pulse (L=0.5mH)
6mJ
Stress beyond above listed ꢀAbsolute Maximum Ratingsꢁ may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Pulse width is limited by maximum junction temperature.
NOTE2: UIS tested and pulse width are limited by maximum junction temperature 150°C (initial temperature TJ=25°C ).
NOTE3: Surface Mounted on 1in2 pad area.
REV1.0
- DEC 2013 RELEASED -
- 3 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Static Characteristics
Drain-Source Breakdown
Voltage
Symbol
Conditions
Min
Typ.
Max
-
Units
BVDSS
IDSS
VGS=0V,IDS=250μA
60
-
-
-
V
VDS=48V,VGS=0V
1
30
Zero Gate Voltage Drain
Current
μA
TJ=85°C
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VGS(th)
IGSS
VDS=VGS,IDS=250μA
VGS=±20V, VDS=0V
VGS=10V,IDS=2.5A
VGS=4.5V,ID=2A
1
-
2.3
-
3
V
±100
104
130
nA
-
87
100
RDS(ON)
NOTE4
mΩ
-
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics NOTE5
Gate Resistance
NOTE4
VSD
ISD=1.5A,VGS=0V
-
-
-
0.8
17
14
1.3
V
trr
-
-
ns
nC
ISD=1.5A, dlSD/dt=100A/μs
Qrr
RG
VGS=0V,VDS=0V,F=1MHz
-
-
-
2.5
255
29
-
332
-
Ω
Input Capacitance
Output Capacitance
Reverse Transfer
CISS
COSS
VGS=0V,
VDS=30V,
pF
Frequency=1.0MHz
CRSS
-
11
-
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
tD(ON)
tR
tD(OFF)
tF
-
-
-
-
5
7.2
11
3
9
13
20
6
VDD=30V, RL=30Ω
IDS=1A, VGEN=10V,
RG=6Ω
ns
Gate Charge Characteristics NOTE5
VDS=30V, VGS=4.5V,
IDS=2.5A
Total Gate Charge
QG
-
2.7
-
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
5.6
1.2
1
7.9
VDS=30V, VGS=10V,
-
-
-
-
IDS≡2.5A
NOTE4: Pulse test; pulse width≤300μs, duty cycle≤2%.
NOTE5: Guaranteed by design, not subject to production testing.
REV1.0
- DEC 2013 RELEASED -
- 4 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV1.0
- DEC 2013 RELEASED -
- 5 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
7. Gate-Source On Resistance
8. Gate Threshold Voltage
9. Drain-Source On Resistance
10. Source-Drain Diode Forward
11. Capacitance
12. Gate Charge
REV1.0
- DEC 2013 RELEASED -
- 6 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
DETAILED INFORMATION
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
REV1.0
- DEC 2013 RELEASED -
- 7 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
SYMBOL
MIN
-
MAX
A
A1
A2
b
1.200
0.080
1.120
0.500
0.220
3.100
1.800
3.000
0.000
0.900
0.300
0.080
2.700
1.400
2.600
c
D
E1
E
e
0.950(BSC)
1.900(BSC)
e1
L
0.300
0.600
θ
0°
8°
REV1.0
- DEC 2013 RELEASED -
- 8 -
AM2308
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- DEC 2013 RELEASED -
- 9 -
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