AM2307PE [ANALOGPOWER]
P-Channel 20-V (D-S) MOSFET; P通道20 -V （D -S ）的MOSFET
| 型号： | AM2307PE |
| 厂家： | 
ANALOG POWER |
| 描述： | P-Channel 20-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Analog Power
AM2307PE
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) (mΩ)
VDS (V)
-20
ID(A)
-5.2
-4.4
-3.9
-3.2
31 @ VGS = -4.5V
44 @ VGS = -2.5V
56 @ VGS = -1.8V
83 @ VGS = -1.5V
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
-20
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±10
TA=25°C
TA=70°C
-5.2
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
A
-4.3
IDM
IS
-20
-1.9
A
TA=25°C
TA=70°C
1.3
Power Dissipation a
PD
W
°C
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 10 sec
Steady State
100
Maximum Junction-to-Ambient a
°C/W
RθJA
166
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
c Preliminary
1
Publication Order Number:
DS_AM2307PE_1B
Analog Power
AM2307PE
Electrical Characteristics
Parameter
Symbol
Test Conditions
Static
Min
Typ
Max
Unit
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
VDS = 0 V, VGS = ±10 V
VDS = -16 V, VGS = 0 V
VDS = -16 V, VGS = 0 V, TJ = 55°C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -4.2 A
VGS = -2.5 V, ID = -3.5 A
VGS = -1.8 V, ID = -3.1 A
VGS = -1.5 V, ID = -2.6 A
VDS = -10 V, ID = -4.2 A
IS = -0.95 A, VGS = 0 V
Dynamic
Gate-Source Threshold Voltage
Gate-Body Leakage
-0.3
-0.55
V
±10
-1
uA
IDSS
Zero Gate Voltage Drain Current
On-State Drain Current
uA
A
-10
ID(on)
-10
31
44
56
83
rDS(on)
Drain-Source On-Resistance
mΩ
gfs
Forward Transconductance
Diode Forward Voltage
20
S
V
VSD
-0.7
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
18
4.8
3.1
81
VDS = -10 V, VGS = -4.5 V,
ID = -4.2 A
nC
ns
VDS = -10 V, RL = 2.4 Ω, ID = -4.2 A,
VGEN = -4.5 V, RGEN = 6 Ω
163
785
397
826
96
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15 V, VGS = 0 V, f = 1 MHz
pF
46
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
c Preliminary
2
Publication Order Number:
DS_AM2307PE_1B
Analog Power
AM2307PE
Typical Electrical Characteristics
10
0.14
0.12
0.1
TJ = 25°C
8
6
4
1.5V
0.08
0.06
0.04
0.02
0
1.8V
2V
2.5V
3.0V
3.5V,4V,4.5V,6V
2
0
0
0.2
0
1
2
3
0
2
4
6
8
10
ID-Drain Current (A)
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
1
0.2
0.18
0.16
0.14
0.12
0.1
TJ = 25°C
ID = -4.2A
TJ = 25°C
0.08
0.06
0.04
0.02
0
0.1
0.01
0.4
0.6
0.8
1
1.2
1.4
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
10
8
1000
900
800
700
600
500
400
300
200
100
0
F = 1MHz
6V,4.5V,4V,3.5V
Ciss
3V
2.5V
2V
1.8V
6
1.5V
4
2
Coss
Crss
0
0
0.2
0.4
0.6
0.8
5
10
15
20
VDS - Drain-to-Source Voltage (V)
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
c Preliminary
3
Publication Order Number:
DS_AM2307PE_1B
Analog Power
AM2307PE
Typical Electrical Characteristics
8
2
VDS = -10V
7
ID = -4.2A
6
5
4
3
2
1
0
1.5
1
0.5
0
10
20
30
40
-50 -25
0
25
50
75 100 125 150
Qg - Total Gate Charge (nC)
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
10
40
35
30
25
20
15
10
5
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
DC
1
0.1
0.01
Idm limit
Limited by
RDS
0
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
0.1
D = 0.5
0.2
RθJA(t) = r(t) + RθJA
RθJA = 166 °C /W
0.1
0.05
0.02
P(pk)
Single Pulse
0.01
0.001
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
c Preliminary
4
Publication Order Number:
DS_AM2307PE_1B
Analog Power
AM2307PE
Package Information
Note:
1. All Dimension Are In mm.
2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not
Exceed 0.10 mm Per Side.
3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar
Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic
Body.
4. The Package Top May Be Smaller Than The Package Bottom.
5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess
Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The
Foot.
c Preliminary
5
Publication Order Number:
DS_AM2307PE_1B
相关型号：
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