AM2307E3SR [AITSEMI]
P-CHANNEL ENHANCEMENT MODE;
| 型号： | AM2307E3SR |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总6页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2307
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM2307 is available in SOT-23S package.
-20V/-4.3A,
R
R
R
DS(ON) =55mΩ(MAX) @VGS = -10V.
DS(ON) = 70mΩ(MAX) @VGS = -4.5V.
DS(ON) =120mΩ(MAX) @VGS = -2.5V
Super High dense cell design for extremely low
RDS(ON)
Reliable and Rugged
Available in SOT-23S Package
ORDERING INFORMATION
APPLICATION
Power Management
Package Type
SOT-23S
Part Number
AM2307E3SR
AM2307E3SVR
Portable Equipment and Battery Powered
Systems.
E3S
V: Halogen free Package
R: Tape & Reel
P CHANNEL MOSFET
Note
SPQ: 3,000pcs/Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV1.0
-AUG 2016 RELEASED -
- 1 -
AM2307
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV1.0
-AUG 2016 RELEASED -
- 2 -
AM2307
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless otherwise noted
VDS, Drain-Source Voltage
-20V
±12V
-4.3A
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Off Characteristics
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics NOTE 3
BVDSS
IDSS
IGSSF
IGSSR
VGS=0V,ID=-250μA
VDS=-24V,VGS=0V
VGS=12V,VDS=0V
VGS=-12V,VDS=0V
-20
-
-
-
-
-
V
-
-
-
-1
μA
nA
nA
100
-100
Gate Threshold Voltage
VGS(th)
VGS=VDS,ID=-250μA
-0.7
-
-1.3
55
V
VGS=-10V,ID=-4.2A
-
-
-
50
60
80
Static Drain-Source On-Resistance
RDS(ON) VGS=-4.5V,ID=-4.0A
VGS=-2.5V,ID=-1.0A
70
mΩ
120
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=-1.0A
-
-
-1.0
V
REV1.0
-AUG 2016 RELEASED -
- 3 -
AM2307
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
TYPICAL PERFORMANCE CHARACTERISTICS
1.
On-Region Characteristics
2.
Transfer Characteristics
3.
On-Resistance vs. Drain Current and Gate
Voltage
4.
On-Resistance vs. Junction Temperature
5.
On-Resistance vs. Gate-Source Voltage
6.
Body-Diode Characteristics
REV1.0
-AUG 2016 RELEASED -
- 4 -
AM2307
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
PACKAGE INFORMATION
Dimension in SOT-23S Package (Unit: mm)
REV1.0
-AUG 2016 RELEASED -
- 5 -
AM2307
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
-AUG 2016 RELEASED -
- 6 -
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