MSA-0636-BLK [AGILENT]

0MHz - 900MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, MICRO-X, 4 PIN;
MSA-0636-BLK
型号: MSA-0636-BLK
厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述:

0MHz - 900MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, MICRO-X, 4 PIN

放大器 射频 微波 功率放大器
文件: 总4页 (文件大小:69K)
中文:  中文翻译
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Agilent MSA-0636  
Cascadable Silicon Bipolar  
MMIC Amplifiers  
Data Sheet  
Features  
Cascadable 50 Gain Block  
Low Operating Voltage:  
3.5 V Typical Vd  
3 dB Bandwidth:  
DC to 0.9 GHz  
Description  
36 micro-X Package  
High Gain:  
The MSA-0636 is a high perfor-  
mance silicon bipolar Monolithic  
Microwave Integrated Circuit  
(MMIC) housed in a cost effective,  
microstrip package. This MMIC is  
designed for use as a general  
purpose 50 gain block. Typical  
applications include narrow and  
broad band IF and RF amplifiers  
in commercial and industrial  
applications.  
19.0 dB Typical at 0.5 GHz  
Low Noise Figure:  
2.8 dB Typical at 0.5 GHz  
Cost Effective Ceramic  
Microstrip Package  
Lead-Free Option Available  
Typical Biasing Configuration  
R
bias  
The MSA-series is fabricated using  
VCC > 5 V  
Agilents 10 GHz f , 25 GHz f  
,
MAX  
T
silicon bipolar MMIC process  
RFC (Optional)  
which uses nitride self-alignment,  
ion implantation, and gold metalli-  
zation to achieve excellent  
performance, uniformity and  
reliability. The use of an external  
bias resistor for temperature and  
current stability also allows bias  
flexibility.  
4
C
C
block  
block  
3
IN  
MSA  
OUT  
1
V
= 3.5 V  
d
2
2
MSA-0636 Absolute Maximum Ratings  
Parameter  
Thermal Resistance[2,5]  
θjc = 155°C/W  
:
Absolute Maximum[1]  
Device Current  
Power Dissipation[2,3]  
RF Input Power  
Junction Temperature  
Storage Temperature[4]  
Notes:  
50 mA  
200 mW  
+13 dBm  
150°C  
65 to 150°C  
1. Permanent damage may occur if any of these limits are exceeded.  
2. TCASE = 25°C.  
3. Derate at 6.5 mW/°C for TC > 169°C.  
4. Storage above +150°C may tarnish the leads of this package making it  
difficult to solder into a circuit.  
5. The small spot size of this technique results in a higher, though more  
accurate determination of θjc than do alternate methods.  
Electrical Specifications[1], TA = 25°C  
Symbol  
Parameters and Test Conditions: Id = 16 mA, ZO = 50  
Units Min. Typ. Max.  
GP  
Power Gain (|S21|2)  
f = 0.1 GHz  
dB  
dB  
19.0  
20.5  
0.7  
22.0  
1.0  
GP  
f3 dB  
Gain Flatness  
f = 0.1 to 0.5 GHz  
3 dB Bandwidth  
GHz  
0.9  
Input VSWR  
f = 0.1 to 1.5 GHz  
f = 0.1 to 1.5 GHz  
f = 0.5 GHz  
1.4:1  
1.3:1  
2.8  
VSWR  
Output VSWR  
NF  
50 Noise Figure  
dB  
dBm  
dBm  
psec  
V
4.0  
3.9  
P1 dB  
IP3  
Output Power at 1 dB Gain Compression  
Third Order Intercept Point  
Group Delay  
f = 0.5 GHz  
2.0  
f = 0.5 GHz  
14.5  
200  
3.5  
tD  
f = 0.5 GHz  
Vd  
Device Voltage  
3.1  
dV/dT  
Device Voltage Temperature Coefficient  
mV/°C  
8.0  
Note:  
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current  
is on the following page.  
Ordering Information  
Part Numbers  
MSA-0636-BLK  
MSA-0636-BLKG  
MSA-0636-TR1  
MSA-0636-TR1G  
No. of Devices  
Comments  
Bulk  
100  
100  
Bulk  
1000  
1000  
7" Reel  
7" Reel  
Note: Order part number with a Gsuffix if lead-free option  
is desired.  
3
MSA-0636 Typical Scattering Parameters (ZO = 50 , TA = 25°C, Id = 16 mA)  
S11  
S21  
S12  
S22  
Freq.  
GHz  
Mag  
Ang  
dB  
Mag  
Ang  
dB  
Mag Ang  
Mag  
Ang  
k
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.8  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
.03  
.02  
.02  
.02  
.02  
.04  
.07  
.10  
.17  
.24  
.31  
.37  
.42  
.46  
.48  
.52  
178  
177  
164  
116  
100  
89  
20.5  
20.3  
20.0  
19.6  
19.2  
18.7  
17.7  
16.6  
14.2  
12.1  
10.3  
8.7  
10.59 171  
10.31 161  
9.96 152  
9.55 144  
9.08 136  
8.59 128  
7.66 115  
6.79 103  
23.4  
22.9  
22.4  
22.0  
21.8  
21.3  
20.2  
19.4  
17.2  
15.8  
15.1  
14.4  
13.9  
13.3  
12.8  
12.2  
.068  
.071  
.076  
.079  
.081  
.086  
.098  
.107  
.138  
.163  
.175  
.190  
.203  
.216  
.229  
.245  
5
8
.04  
.05  
.06  
.07  
.09  
.09  
.10  
.11  
.12  
.12  
.12  
.11  
.10  
.08  
.08  
.09  
44  
68  
87  
104  
114  
123  
140  
156  
172  
148  
140  
135  
144  
1.05  
1.04  
1.04  
1.03  
1.04  
1.04  
1.03  
1.02  
1.03  
1.04  
1.08  
1.10  
1.11  
1.11  
1.11  
1.09  
14  
19  
21  
24  
29  
31  
30  
26  
27  
24  
19  
16  
12  
8
96  
108  
134  
160  
178  
166  
151  
139  
5.13  
4.01  
3.26  
2.72  
2.33  
2.04  
1.81  
79  
60  
48  
34  
21  
9
7.4  
6.2  
5.1  
4.2  
167  
173  
173  
126  
110  
3  
1.62 15  
Typical Performance, TA = 25°C  
(unless otherwise noted)  
21  
25  
25  
20  
15  
10  
5
T
T
T
= +125°C  
= +25°C  
= –55°C  
C
C
C
0.1 GHz  
0.5 GHz  
Gain Flat to DC  
18  
20  
15  
10  
1.0 GHz  
15  
12  
2.0 GHz  
9
6
3
0
5
0
0
0.1  
0.3 0.5  
1.0  
3.0 6.0  
0
1
2
3
4
5
10  
15  
20  
I
25  
(mA)  
30  
FREQUENCY (GHz)  
V
(V)  
d
d
Figure 1. Typical Power Gain vs.  
Frequency, Id = 16 mA.  
Figure 2. Device Current vs. Voltage.  
Figure 3. Power Gain vs. Current.  
4.0  
12  
8
21  
20  
19  
I
I
= 30 mA  
d
3.5  
18  
17  
G
P
= 20 mA  
= 16 mA  
d
3.0  
2.5  
2.0  
5
5
4
0
NF  
P
4
3
4
3
I
d
d
1 dB  
I
I
I
= 12 mA  
2
2
1
d
d
d
= 16 mA, 30 mA  
= 20 mA  
1
0
I
= 12 mA  
-4  
0.1  
0
0.2 0.3 0.5  
1.0  
2.0  
4.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
4.0  
–55 –25  
+25  
+85  
+125  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
TEMPERATURE (°C)  
Figure 5. Output Power at 1 dB Gain  
Compression vs. Frequency.  
Figure 6. Noise Figure vs. Frequency.  
Figure 4. Output Power at 1 dB Gain  
Compression, NF and Power Gain vs.  
Case Temperature, f = 0.5 GHz,  
Id = 16 mA.  
36 micro-X Package Dimensions  
2.15  
(0.085)  
SOURCE  
4
2.11 (0.083) DIA.  
DRAIN  
3
1
GATE  
0.508  
(0.020)  
2
SOURCE  
1.45 0.25  
(0.057 0.010)  
2.54  
(0.100)  
0.15 0.05  
(0.006 0.002)  
0.56  
(0.022)  
4.57 0.25  
0.180 0.010  
Notes:  
1. Dimensions are in millimeters (inches)  
2. Tolerances: in .xxx = 0.005  
mm .xx = 0.13  
www.agilent.com/semiconductors  
For product information and a complete list of  
distributors, please go to our web site.  
For technical assistance call:  
Americas/Canada: +1 (800) 235-0312 or  
(916) 788-6763  
Europe: +49 (0) 6441 92460  
China: 10800 650 0017  
Hong Kong: (65) 6756 2394  
India, Australia, New Zealand: (65) 6755 1939  
Japan: (+81 3) 3335-8152(Domestic/International), or  
0120-61-1280(Domestic Only)  
Korea: (65) 6755 1989  
Singapore, Malaysia, Vietnam, Thailand, Philippines,  
Indonesia: (65) 6755 2044  
Taiwan: (65) 6755 1843  
Data subject to change.  
Copyright © 2005 Agilent Technologies, Inc.  
Obsoletes 5989-0142EN  
April 4, 2005  
5989-2743EN  

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