MSA-0670 [AVAGO]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-0670 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSA-0670
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
Features
ꢀ
Theꢀ MSA-0670ꢀ isꢀ aꢀ highꢀ performanceꢀ siliconꢀ bipolarꢀ
MonolithicꢀMicrowaveꢀIntegratedꢀCircuitꢀ(MMIC)ꢀhousedꢀ
inꢀ aꢀ hermetic,ꢀ highꢀ reliabilityꢀ package.ꢀ Thisꢀ MMICꢀ isꢀ
designedꢀforꢀuseꢀasꢀaꢀgeneralꢀpurposeꢀ50Ωꢀgainꢀblock.ꢀ
TypicalꢀapplicationsꢀincludeꢀnarrowꢀandꢀbroadꢀbandꢀIFꢀ
andꢀRFꢀamplifiersꢀinꢀindustrialꢀandꢀmilitaryꢀapplications.
• Cascadableꢀ50ꢀΩꢀGainꢀBlock
•ꢀ LowꢀOperatingꢀVoltage:ꢀꢀ
3.5ꢀVꢀTypicalꢀV
d
ꢀ
• 3ꢀdBꢀBandwidth:ꢀ
DCꢀtoꢀ1.0ꢀGHz
ꢀ
• HighꢀGain:ꢀ
Theꢀ MSA-seriesꢀ isꢀ fabricatedꢀ usingꢀ Avago’sꢀ 10ꢀ GHzꢀ
19.5ꢀdBꢀTypicalꢀatꢀ0.5ꢀGHz
f ,ꢀ 25ꢀGHzꢀ f
,ꢀ siliconꢀ bipolarꢀ MMICꢀ processꢀ whichꢀ
MAX
T
•ꢀ LowꢀNoiseꢀFigure:ꢀ
usesꢀ nitrideꢀ self-alignment,ꢀ ionꢀ implantation,ꢀ andꢀ
goldꢀ metallizationꢀ toꢀ achieveꢀ excellentꢀ performance,ꢀ
uniformityꢀ andꢀ reliability.ꢀ Theꢀ useꢀ ofꢀ anꢀ externalꢀ biasꢀ
resistorꢀforꢀtemperatureꢀandꢀcurrentꢀstabilityꢀalsoꢀallowsꢀ
biasꢀflexibility.
2.8ꢀdBꢀTypicalꢀatꢀ0.5ꢀGHz
•ꢀ HermeticꢀGold-ceramicꢀMicrostripꢀPackage
70 mil Package
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
MSA-0670 Absolute Maximum Ratings
[2,4]
[1]
Thermal Resistance
θ = 130°C/W
jc
:
Parameter
Absolute Maximum
50 mA
Device Current
[ꢀ,3]
Power Dissipation
ꢀ00 mW
RF Input Power
Junction Temperature
Storage Temperature
Notes:
+13 dBm
ꢀ00°C
–65 to ꢀ00°C
1.ꢀ Permanentꢀdamageꢀmayꢀoccurꢀifꢀanyꢀofꢀtheseꢀlimitsꢀareꢀexceeded.
2.ꢀ T ꢀꢀ=ꢀ25°C.
CASE
3.ꢀ Derateꢀatꢀ7.7ꢀmW/°CꢀforꢀT ꢀ>ꢀ174°C.
C
4.ꢀ Theꢀsmallꢀspotꢀsizeꢀofꢀthisꢀtechniqueꢀresultsꢀinꢀaꢀhigher,ꢀthoughꢀmoreꢀaccurateꢀdeterminationꢀ
ofꢀθ ꢀthanꢀdoꢀalternateꢀmethods.
jc
[1]
Electrical Specifications , T = 25°C
A
Symbol
Parameters and Test Conditions: I = 16 mA, Z = 50 Ω
Units
Min.
Typ.
Max.
d
O
ꢀ
G
Power Gain (|S | )
f = 0.1 GHz
dB
dB
GHz
19.0
ꢀ0.5
0.ꢁ
1.0
1.9:1
1.8:1
ꢀ.8
ꢀꢀ.0
1.0
P
ꢀ1
∆G
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
f = 0.1 to 0.6 GHz
P
f
3 dB
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
VSWR
NF
dB
dBm
dBm
psec
V
4.0
3.9
P
1 dB
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
ꢀ.0
IP
14.5
ꢀ00
3.5
3
t
D
f = 0.5 GHz
V
d
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1.ꢀ Theꢀrecommendedꢀoperatingꢀcurrentꢀrangeꢀforꢀthisꢀdeviceꢀisꢀ12ꢀtoꢀ30ꢀmA.ꢀꢀ
Typicalꢀperformanceꢀasꢀaꢀfunctionꢀofꢀcurrentꢀisꢀonꢀtheꢀfollowingꢀpage.
ꢀ
MSA-0670 Typical Scattering Parameters (Z = 50 Ω, T = 25°C, I = 16 mA)
O
A
d
Freq.
GHz
S
11
S
Mag
S
Mag
S
22
21
12
Mag
Ang
dB
Ang
dB
Ang
Mag
Ang
k
0.1
0.ꢀ
0.3
0.4
0.5
0.6
0.8
1.0
1.5
ꢀ.0
ꢀ.5
3.0
3.5
4.0
4.5
5.0
.05
.0ꢁ
.09
.11
.13
.15
.19
.ꢀ4
.31
.38
.4ꢀ
.46
.48
.48
.48
.48
–14ꢁ
–134
–1ꢀ6
–1ꢀ3
–1ꢀ3
–1ꢀ3
–1ꢀ6
–1ꢀ9
–141
–15ꢁ
–16ꢁ
1ꢁ8
ꢀ0.5
ꢀ0.4
ꢀ0.1
19.9
19.6
19.ꢀ
1ꢁ.4
16.5
15.ꢀ
13.0
11.1
9.5
10.6ꢀ
10.41
10.16
9.85
9.50
9.09
8.ꢀ8
ꢁ.46
5.ꢁ6
4.4ꢁ
3.59
ꢀ.9ꢁ
ꢀ.49
ꢀ.13
1.8ꢁ
1.6ꢁ
1ꢁꢀ
164
156
148
141
135
1ꢀꢀ
110
8ꢁ
–ꢀ3.3
–ꢀ3.0
–ꢀꢀ.6
–ꢀꢀ.4
–ꢀꢀ.0
–ꢀ1.3
–ꢀ0.ꢁ
–19.8
–18.ꢀ
–1ꢁ.ꢀ
–16.ꢁ
–16.4
–16.ꢀ
–16.1
–15.9
–15.8
.068
.0ꢁ0
.0ꢁ4
.0ꢁ6
.0ꢁ9
.08ꢀ
.093
.103
.1ꢀ4
.138
.146
.15ꢀ
.155
.156
.161
.163
4
8
.05
.09
.13
.16
.ꢀ0
.ꢀꢀ
.ꢀ5
.ꢀꢁ
.ꢀꢁ
.ꢀ4
.ꢀ1
.1ꢁ
.14
.11
.11
.14
–69
–9ꢀ
1.05
1.04
1.0ꢀ
1.00
0.99
0.9ꢁ
0.94
0.9ꢀ
0.91
0.94
1.01
1.0ꢁ
1.15
1.ꢀꢁ
1.35
1.46
1ꢀ
14
ꢀ6
18
ꢀꢀ
ꢀꢀ
ꢀ3
19
ꢀ0
16
11
9
–104
–113
–1ꢀ1
–1ꢀ8
–141
–154
–1ꢁ6
166
68
5ꢁ
158
45
156
1ꢁ3
ꢁ.9
33
163
164
6.6
ꢀꢀ
–1ꢁ5
–154
–141
155
5.5
13
5
3
143
4.5
3
Typical Performance, T = 25°C
A
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +125C
= +25C
= –55C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs. Frequency,
TA = 25°C, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
21
20
19
I
I
= 30 mA
d
3.5
18
G
P
17
= 20 mA
= 16 mA
d
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
1 dB
I = 12 mA
d
I = 16 mA, 30 mA
d
I = 20 mA
d
2
1
2
1
I
= 12 mA
d
-4
0.1
0
0
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (C)
Figure 5. Output Power at 1 dB Gain Compression
vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain Compression,
NF and Power Gain vs. Case Temperature, f = 0.5 GHz,
Id = 16 mA.
3
Ordering Information
Part Numbers
No. of Devices
Comments
MSA-06ꢁ0
100
Bulk
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
RF INPUT
1
AND BIAS
3
Notes:
(unless otherwise specified)
2
GROUND
in
1. Dimensions are
2. Tolerances
mm
in .xxx = ± 0.005
mm .xx = ± 0.13
.070
1.78
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.035
.89
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © ꢀ008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-ꢀꢁ63EN
AV0ꢀ-1ꢀꢀ9EN - May 15, ꢀ008
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