MSA-0685 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-0685 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0685
plastic package. This MMIC is
Features
85 Plastic Package
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
The MSA-series is fabricated using
18.5 dBTypicalat0.5GHz
HP’s10GHzf ,25 GHzf
,
T
MAX
• Low Noise Figure:
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
3.0 dB Typical at 0.5 GHz
• Low Cost Plastic Package
Description
The MSA-0685 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
5965-9587E
6-378
MSA-0685 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
50 mA
200mW
+13dBm
150°C
θjc =110°C/W
–65to150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 9.1 mW/°C for TC > 128°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
20.0
18.5
± 0.7
0.8
f=0.5GHz
17.0
∆GP
Gain Flatness
f=0.1to0.5GHz
dB
f3 dB
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.5:1
1.4:1
3.0
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.5
200
3.5
tD
f=0.5GHz
Vd
Device Voltage
2.8
4.2
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 25 mA. Typical performance as a function of current
is on the following page.
6-379
MSA-0685 Typical Scattering Parameters (Z= 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.04
.02
.02
.03
.05
.07
.10
.13
.21
.29
.34
.41
.46
.49
.52
.54
171
–180
–143
–113
–105
–101
–111
–118
–140
–163
–176
169
20.1
29.8
19.4
19.1
18.7
18.2
17.3
16.4
14.1
12.0
10.3
8.7
10.09 171
9.75 161
9.38 153
8.99 145
8.57 138
8.14 131
7.32 119
6.57 107
–22.5
–22.4
–22.2
–21.8
–21.3
–20.7
–19.7
–18.8
–17.1
–15.8
–15.2
–14.8
–14.2
–13.8
–13.4
–12.9
.075
.076
.077
.081
.086
.092
.103
.115
.140
.163
.174
.181
.194
.203
.215
.226
5
10
15
17
21
25
28
28
28
26
28
25
22
20
17
15
.04
.05
.07
.08
.10
.11
.13
.14
.15
.16
.16
.15
.13
.10
.09
.09
–30
–56
–76
–91
1.04
1.04
1.05
1.04
1.04
1.03
1.01
0.99
1.00
1.02
1.06
1.10
1.11
1.13
1.14
1.14
–104
–116
–134
–150
180
5.06
3.98
3.26
2.71
2.31
2.01
1.77
1.60
84
65
55
42
30
18
7
157
150
143
157
7.2
144
146
6.1
156
135
5.0
173
123
4.1
–3
–178
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +85°C
= +25°C
= –25°C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
20
19
18
I
I
= 30 mA
d
d
G
P
3.5
17
= 20 mA
= 16 mA
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
d
1 dB
I
I
I
= 12 mA
2
1
2
1
d
d
d
= 16 mA, 30 mA
= 20 mA
I
= 12 mA
-4
0.1
0
0
–25
0
+25
+55
+85
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
6-380
85 Plastic Package Dimensions
.020
.51
GROUND
4
0.143 ± 0.015
3.63 ± 0.38
45°
3
1
RF INPUT
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
2
GROUND
in .xxx = ± 0.005
mm .xx = ± 0.13
.085
2.15
.060 ± .010
1.52 ± .25
.006 ± .002
.15 ± .05
5° TYP.
.286 ± .030
7.36 ± .76
.07
0.43
6-381
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