MSA-0636G [AVAGO]
0MHz - 900MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, MICRO-X, 4 PIN;
| 型号： | MSA-0636G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | 0MHz - 900MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, MICRO-X, 4 PIN 放大器 射频 微波 功率放大器 |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0635, -0636
35 micro-X Package[1]
designed for use as a general
Features
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.9 GHz
The MSA-series is fabricated using
• High Gain:
Agilent’s 10 GHz f , 25 GHz f
,
MAX
T
19.0 dB Typical at 0.5 GHz
Note:
silicon bipolar MMIC process
• Low Noise Figure:
1. Short leaded 36 package available
upon request.
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
2.8 dB Typical at 0.5 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0635 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Available in cut lead version
(package 36) as MSA-0636.
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
2
MSA-0635, -0636 Absolute Maximum Ratings
Parameter
Thermal Resistance[2,5]
θjc = 155°C/W
:
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
Notes:
50 mA
200 mW
+13 dBm
150°C
–65 to 150°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
Power Gain (|S21|2)
f = 0.1 GHz
dB
dB
19.0
20.5
±0.7
0.9
22.0
∆GP
f3 dB
Gain Flatness
f = 0.1 to 0.5 GHz
±1.0
3 dB Bandwidth
GHz
Input VSWR
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
1.4:1
1.3:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.0
3.9
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f = 0.5 GHz
2.0
f = 0.5 GHz
14.5
200
3.5
tD
f = 0.5 GHz
Vd
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
3
MSA-0635, -0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.03
.02
.02
.02
.02
.04
.07
.10
.17
.24
.31
.37
.42
.46
.48
.52
–178
–177
–164
–116
–100
–89
20.5
20.3
20.0
19.6
19.2
18.7
17.7
16.6
14.2
12.1
10.3
8.7
10.59 171
10.31 161
9.96 152
9.55 144
9.08 136
8.59 128
7.66 115
6.79 103
–23.4
–22.9
–22.4
–22.0
–21.8
–21.3
–20.2
–19.4
–17.2
–15.8
–15.1
–14.4
–13.9
–13.3
–12.8
–12.2
.068
.071
.076
.079
.081
.086
.098
.107
.138
.163
.175
.190
.203
.216
.229
.245
5
8
.04
.05
.06
.07
.09
.09
.10
.11
.12
.12
.12
.11
.10
.08
.08
.09
–44
–68
–87
–104
–114
–123
–140
–156
172
148
140
135
144
1.05
1.04
1.04
1.03
1.04
1.04
1.03
1.02
1.03
1.04
1.08
1.10
1.11
1.11
1.11
1.09
14
19
21
24
29
31
30
26
27
24
19
16
12
8
–96
–108
–134
–160
–178
166
151
139
5.13
4.01
3.26
2.72
2.33
2.04
1.81
79
60
48
34
21
9
7.4
6.2
5.1
4.2
167
–173
–173
126
110
–3
1.62 –15
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
21
20
19
I
I
= 30 mA
d
3.5
18
17
G
P
= 20 mA
= 16 mA
d
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
d
1 dB
I
I
I
= 12 mA
2
2
1
d
d
d
= 16 mA, 30 mA
= 20 mA
1
0
I
= 12 mA
-4
0.1
0
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id = 16 mA.
35 micro-X Package Dimensions
4
GROUND
.085
2.15
.083
2.11
DIA.
RF OUTPUT
AND BIAS
RF INPUT
1
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
.057 ± .010
1.45 ± .25
.100
2.54
in .xxx = ± 0.005
mm .xx = ± 0.13
.022
.56
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5968-2353E
October 31, 2001
5988-4739EN
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