MSA-0670 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-0670 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0670
high reliability package. This
Features
70 mil Package
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
The MSA-series is fabricated using
19.5 dBTypicalat0.5GHz
HP’s10GHzf ,25 GHzf
,
T
MAX
• Low Noise Figure:
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
2.8 dB Typical at 0.5 GHz
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-0670 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
5965-9586E
6-374
MSA-0670 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Parameter
AbsoluteMaximum[1]
θjc =130°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
50 mA
200mW
+13dBm
200°C
–65to200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 7.7 mW/°C for TC > 174°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
dB
19.0
20.5
± 0.7
1.0
22.0
∆GP
f3 dB
Gain Flatness
f=0.1to0.6GHz
± 1.0
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.9:1
1.8:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.0
3.9
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.5
200
3.5
tD
f=0.5GHz
Vd
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-375
MSA-0670 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.05
.07
.09
.11
.13
.15
.19
.24
.31
.38
.42
.46
.48
.48
.48
.48
–147
–134
–126
–123
–123
–123
–126
–129
–141
–157
–167
178
20.5
20.4
20.1
19.9
19.6
19.2
17.4
16.5
15.2
13.0
11.1
9.5
10.62 172
10.41 164
10.16 156
9.85 148
9.50 141
9.09 135
8.28 122
7.46 110
–23.3
–23.0
–22.6
–22.4
–22.0
–21.3
–20.7
–19.8
–18.2
–17.2
–16.7
–16.4
–16.2
–16.1
–15.9
–15.8
.068
.070
.074
.076
.079
.082
.093
.103
.124
.138
.146
.152
.155
.156
.161
.163
4
8
.05
.09
.13
.16
.20
.22
.25
.27
.27
.24
.21
.17
.14
.11
.11
.14
–69
–92
1.05
1.04
1.02
1.00
0.99
0.97
0.94
0.92
0.91
0.94
1.01
1.07
1.15
1.27
1.35
1.46
12
14
26
18
22
22
23
19
20
16
11
9
–104
–113
–121
–128
–141
–154
–176
166
5.76
4.47
3.59
2.97
2.49
2.13
1.87
1.67
87
68
57
45
33
22
13
3
158
156
173
7.9
163
164
6.6
–175
–154
–141
155
5.5
5
3
143
4.5
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
21
20
19
I
I
= 30 mA
d
d
3.5
18
G
P
17
= 20 mA
= 16 mA
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
d
1 dB
I
I
I
= 12 mA
2
1
2
1
d
d
d
= 16 mA, 30 mA
= 20 mA
I
= 12 mA
-4
0.1
0
0
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
6-376
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
1
3
Notes:
(unless otherwise specified)
2
GROUND
in
1. Dimensions are
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.070
1.70
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.035
.89
6-377
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