MSA-0636-TR1G [AGILENT]
Wide Band Low Power Amplifier, 0MHz Min, 900MHz Max, 1 Func, BIPolar, LEAD FREE, CERAMIC, MICRO-X, 4 PIN;型号: | MSA-0636-TR1G |
厂家: | AGILENT TECHNOLOGIES, LTD. |
描述: | Wide Band Low Power Amplifier, 0MHz Min, 900MHz Max, 1 Func, BIPolar, LEAD FREE, CERAMIC, MICRO-X, 4 PIN 射频 微波 |
文件: | 总4页 (文件大小:69K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Agilent MSA-0636
Cascadable Silicon Bipolar
MMIC Amplifiers
Data Sheet
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.9 GHz
Description
36 micro-X Package
• High Gain:
The MSA-0636 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
19.0 dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Cost Effective Ceramic
Microstrip Package
• Lead-Free Option Available
Typical Biasing Configuration
R
bias
The MSA-series is fabricated using
VCC > 5 V
Agilent’s 10 GHz f , 25 GHz f
,
MAX
T
silicon bipolar MMIC process
RFC (Optional)
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
2
MSA-0636 Absolute Maximum Ratings
Parameter
Thermal Resistance[2,5]
θjc = 155°C/W
:
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
Notes:
50 mA
200 mW
+13 dBm
150°C
–65 to 150°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
Power Gain (|S21|2)
f = 0.1 GHz
dB
dB
19.0
20.5
0.7
22.0
1.0
∆GP
f3 dB
Gain Flatness
f = 0.1 to 0.5 GHz
3 dB Bandwidth
GHz
0.9
Input VSWR
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
1.4:1
1.3:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.0
3.9
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f = 0.5 GHz
2.0
f = 0.5 GHz
14.5
200
3.5
tD
f = 0.5 GHz
Vd
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
MSA-0636-BLK
MSA-0636-BLKG
MSA-0636-TR1
MSA-0636-TR1G
No. of Devices
Comments
Bulk
100
100
Bulk
1000
1000
7" Reel
7" Reel
Note: Order part number with a “G” suffix if lead-free option
is desired.
3
MSA-0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.03
.02
.02
.02
.02
.04
.07
.10
.17
.24
.31
.37
.42
.46
.48
.52
–178
–177
–164
–116
–100
–89
20.5
20.3
20.0
19.6
19.2
18.7
17.7
16.6
14.2
12.1
10.3
8.7
10.59 171
10.31 161
9.96 152
9.55 144
9.08 136
8.59 128
7.66 115
6.79 103
–23.4
–22.9
–22.4
–22.0
–21.8
–21.3
–20.2
–19.4
–17.2
–15.8
–15.1
–14.4
–13.9
–13.3
–12.8
–12.2
.068
.071
.076
.079
.081
.086
.098
.107
.138
.163
.175
.190
.203
.216
.229
.245
5
8
.04
.05
.06
.07
.09
.09
.10
.11
.12
.12
.12
.11
.10
.08
.08
.09
–44
–68
–87
–104
–114
–123
–140
–156
172
148
140
135
144
1.05
1.04
1.04
1.03
1.04
1.04
1.03
1.02
1.03
1.04
1.08
1.10
1.11
1.11
1.11
1.09
14
19
21
24
29
31
30
26
27
24
19
16
12
8
–96
–108
–134
–160
–178
166
151
139
5.13
4.01
3.26
2.72
2.33
2.04
1.81
79
60
48
34
21
9
7.4
6.2
5.1
4.2
167
–173
–173
126
110
–3
1.62 –15
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
21
20
19
I
I
= 30 mA
d
3.5
18
17
G
P
= 20 mA
= 16 mA
d
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
d
1 dB
I
I
I
= 12 mA
2
2
1
d
d
d
= 16 mA, 30 mA
= 20 mA
1
0
I
= 12 mA
-4
0.1
0
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id = 16 mA.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
2.11 (0.083) DIA.
DRAIN
3
1
GATE
0.508
(0.020)
2
SOURCE
1.45 0.25
(0.057 0.010)
2.54
(0.100)
0.15 0.05
(0.006 0.002)
0.56
(0.022)
4.57 0.25
0.180 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = 0.005
mm .xx = 0.13
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5989-0142EN
April 4, 2005
5989-2743EN
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