MSA-0636-TR1G [AVAGO]
100MHz - 1500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, 36 MICRO-X, 4 PIN;
| 型号： | MSA-0636-TR1G |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | 100MHz - 1500MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, CERAMIC, 36 MICRO-X, 4 PIN 放大器 射频 微波 功率放大器 |
| 文件： | 总4页 (文件大小：371K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSA-0636
Cascadable Silicon Bipolar MMIC Amplifiers
Data Sheet
Description
Features
The MSA-0636 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC)
housed in a cost effective, microstrip package. This
MMICisdesignedforuseasageneralpurpose50Ωgain
block. Typical applications include narrow and broad
bandIFandRFamplifiersincommercialandindustrial
applications.
•
Cascadable 50Ω Gain Block
•
Low Operating Voltage:
3.5 V Typical Vd
•
•
•
•
3 dB Bandwidth:
DC to 0.9 GHz
High Gain:
19.0 dB Typical at 0.5 GHz
The MSA-series is fabricated using Avago’s 10 GHz f ,
T
Low Noise Figure:
2.8 dB Typical at 0.5 GHz
25 GHz f
, silicon bipolar MMIC process which uses
MAX
nitride self-alignment, ion implantation, and gold
metallization to achieve excellent performance,
uniformity and reliability. The use of an external bias
resistorfortemperatureandcurrentstabilityalsoallows
bias flexibility.
Cost Effective Ceramic Microstrip Package
Typical Biasing Configuration
36 micro-X Package
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
2
MSA-0636 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
Thermal Resistance[2,5]
θjc = 155°C/W
:
Absolute Maximum[1]
50 mA
200 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature[4]
Notes:
150°C
–65 to 150°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
Power Gain (|S21|2)
f = 0.1 GHz
dB
dB
19.0
20.5
0.7
22.0
1.0
∆GP
f3 dB
Gain Flatness
f = 0.1 to 0.5 GHz
3 dB Bandwidth
GHz
0.9
Input VSWR
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
1.4:1
1.3:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.0
3.9
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f = 0.5 GHz
2.0
f = 0.5 GHz
14.5
200
3.5
tD
f = 0.5 GHz
Vd
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
Ordering Information
Part Numbers
MSA-0636-BLKG
MSA-0636-TR1G
No. of Devices
Comments
Bulk
100
1000
7" Reel
3
MSA-0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.03
.02
.02
.02
.02
.04
.07
.10
.17
.24
.31
.37
.42
.46
.48
.52
–178
–177
–164
–116
–100
–89
20.5
20.3
20.0
19.6
19.2
18.7
17.7
16.6
14.2
12.1
10.3
8.7
10.59 171
10.31 161
9.96 152
9.55 144
9.08 136
8.59 128
7.66 115
6.79 103
–23.4
–22.9
–22.4
–22.0
–21.8
–21.3
–20.2
–19.4
–17.2
–15.8
–15.1
–14.4
–13.9
–13.3
–12.8
–12.2
.068
.071
.076
.079
.081
.086
.098
.107
.138
.163
.175
.190
.203
.216
.229
.245
5
8
.04
.05
.06
.07
.09
.09
.10
.11
.12
.12
.12
.11
.10
.08
.08
.09
–44
–68
–87
–104
–114
–123
–140
–156
172
148
140
135
144
1.05
1.04
1.04
1.03
1.04
1.04
1.03
1.02
1.03
1.04
1.08
1.10
1.11
1.11
1.11
1.09
14
19
21
24
29
31
30
26
27
24
19
16
12
8
–96
–108
–134
–160
–178
166
151
139
5.13
4.01
3.26
2.72
2.33
2.04
1.81
79
60
48
34
21
9
7.4
6.2
5.1
4.2
167
–173
–173
126
110
–3
1.62 –15
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
21
20
19
I
I
= 30 mA
d
3.5
18
17
G
P
= 20 mA
= 16 mA
d
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
d
1 dB
I
I
I
= 12 mA
2
2
1
d
d
d
= 16 mA, 30 mA
= 20 mA
1
0
I
= 12 mA
-4
0.1
0
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id = 16 mA.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
2.11 (0.083) DIA.
DRAIN
3
1
GATE
0.508
(0.020)
2
SOURCE
1.45 0.25
(0.057 0.010)
2.54
(0.100)
0.15 0.05
(0.006 0.002)
0.56
(0.022)
4.57 0.25
0.180 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = 0.005
mm .xx = 0.13
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 2007 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-2743EN
AV02-0304EN - April 12, 2007
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