5SHY35L4512 [ABB]
Asymmetric Integrated Gate- Commutated Thyristor; 不对称的集成网关换流晶闸管
| 型号： | 5SHY35L4512 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Asymmetric Integrated Gate- Commutated Thyristor |
| 文件： | 总9页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDRM
ITGQM
ITSM
=
=
=
=
=
=
4500 V
4000 A
Asymmetric Integrated Gate-
Commutated Thyristor
35×103 A
V(T0)
rT
1.15 V
5SHY 35L4512
0.21
mW
VDC-link
2800 V
Doc. No. 5SYA1233-02 June 07
· Lowest on state voltage (2V @ 4000A)
· Optimized for low frequency (<100 Hz) and
wide temperature range
· High reliability
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Contact factory for series connection
Blocking
Maximum rated values 1)
Conditions
Symbol
min
min
typ
typ
max
4500
2800
Unit
V
Parameter
Rep. peak off-state voltage VDRM
Gate Unit energized
Permanent DC voltage for VDC-link
100 FIT failure rate of GCT
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
V
Reverse voltage
VRRM
IGCT in
off-state
on-state
17
10
V
V
Characteristic values
Conditions
max
Unit
Parameter
Symbol
Rep. peak off-state current IDRM
VD = VDRM, Gate Unit energized
50
mA
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Conditions
min
typ
max
Unit
Parameter
Symbol
Mounting force
Characteristic values
Parameter
Fm
36
40
44
kN
Conditions
min
typ
max
Unit
mm
mm
kg
Symbol
Pole-piece diameter
Dp
± 0.1 mm
85
Housing thickness
Weight
H
25.3
25.8
2.9
m
Surface creepage distance Ds
Anode to Gate
Anode to Gate
± 1.0 mm
33
10
mm
mm
mm
mm
mm
Air strike distance
Length
Da
l
439
40
Height
h
± 1.0 mm
Width IGCT
w
± 1.0 mm
173
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHY 35L4512
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Conditions
min
typ
max
Unit
Parameter
Symbol
Max. average on-state
current
IT(AV)M
Half sine wave, TC = 85 °C,
Double side cooled
2100
A
Max. RMS on-state current IT(RMS)
3300
35×103
A
A
Max. peak non-repetitive
surge on-state current
ITSM
tp = 10 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
Limiting load integral
I2t
6.1×106 A2s
23×103
Max. peak non-repetitive
surge on-state current
ITSM
tp = 30 ms, Tj = 125 °C, sine wave
after surge: VD = VR = 0 V
A
Limiting load integral
I2t
7.9×106 A2s
Stray inductance between LD
GCT and antiparallel diode
Only relevant for applications with
antiparallel diode to the IGCT
300
nH
Critical rate of rise of on-
state current
diT/dtcr For higher diT/dt and current lower
than 100 A an external retrigger puls
is required.
200
A/µs
Characteristic values
Parameter
Conditions
min
typ
max
2
Unit
V
Symbol
On-state voltage
VT
IT = 4000 A, Tj = 125 °C
1.8
Threshold voltage
Slope resistance
V(T0)
rT
Tj = 125 °C
IT = 1000...4000 A
1.15
0.21
V
mW
Turn-on switching (see Fig. 14, 15)
Maximum rated values 1)
Conditions
Symbol
min
min
typ
typ
max
Unit
Parameter
Critical rate of rise of on-
state current
diT/dtcr f = 0..500 Hz, Tj = 125 °C,
1000
A/µs
VD = 2800 V, ITM £ 4000 A
Characteristic values
Parameter
Conditions
max
3.5
7
Unit
µs
Symbol
Turn-on delay time
tdon
VD = 2800 V, Tj = 125 °C
IT = 4000 A, di/dt = VD / Li
Li = 5 µH
Turn-on delay time status
feedback
tdon SF
µs
CCL = 10 µF, LCL = 0.3 µH
Rise time
tr
1
µs
J
Turn-on energy per pulse
Eon
1.5
Turn-off switching (see Fig. 7, 8, 10, 14, 15)
Maximum rated values 1)
Conditions
min
min
typ
max
Unit
Parameter
Symbol
Max. controllable turn-off
current
ITGQM
4000
A
VDM £ VDRM, Tj = 125°C,
VD = 2800 V, RS = 0.65 W,
CCL = 10 µF, LCL £ 0.3 µH
Characteristic values
Parameter
Conditions
typ
max
11
Unit
µs
Symbol
Turn-off delay time
tdoff
VD = 2800 V, Tj = 125 °C
V
DM £ VDRM, RS = 0.65 W
Turn-off delay time status
feedback
tdoff SF
7
µs
ITGQ = 4000 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
Turn-off energy per pulse
Eoff
26
37
J
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 2 of 9
5SHY 35L4512
Gate Unit Data
Power supply (see Fig. 2, 9, 10, 12, 13)
Maximum rated values 1)
Conditions
Symbol
min
typ
max
Unit
Parameter
Gate Unit voltage
(Connector X1)
VGIN,RMS AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
28
40
V
galvanic isolation to power circuit.
Min. current needed to power IGIN Min Rectified average current
2.1
A
up the Gate Unit
see application note 5SYA 2031
Gate Unit power consumption PGIN Max
100
W
Characteristic values
Conditions
Symbol
min
typ
max
Unit
Parameter
Internal current limitation
IGIN Max Rectified average current limited by
the Gate Unit
8
A
2)
Optical control input/output
Maximum rated values 1)
Conditions
min
40
typ
typ
max
Unit
µs
Parameter
Symbol
Min. on-time
ton
Min. off-time
Characteristic values
Parameter
toff
40
µs
Conditions
min
max
-1
Unit
dBm
dBm
dBm
Symbol
Optical input power
Pon CS
-15
CS: Command signal
Poff CS SF: Status feedback
Optical noise power
-45
-1
Valid for 1mm plastic optical fiber
Optical output power
Optical noise power
Pon SF
Poff SF
-19
(POF)
-50.0 dBm
Pulse width threshold
External retrigger pulse width
tGLITCH Max. pulse width without response
tretrig
400
ns
ns
600
1100
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 11, 12, 13)
Description
Parameter
Symbol
Gate Unit power connector
X1
AMP: MTA-156, Part Number 641210-5 3)
Agilent, Type HFBR-2528 4)
Agilent, Type HFBR-1528 4)
LWL receiver for command signal
LWL transmitter for status feedback
CS
SF
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Agilent Technologies, www.semiconductor.agilent.com
Visual feedback (see Fig. 13)
Description
Symbol
Color
Parameter
Gate OFF
LED1 "Light" when GCT is off
(green)
(yellow)
(red)
Gate ON
LED2 "Light" when gate-current is flowing
LED3 "Light" when not ready / Failure
LED4 "Light" when power supply is within specified range
Fault
Power supply voltage OK
(green)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 3 of 9
5SHY 35L4512
Thermal
Maximum rated values 1)
Conditions
min
-40
-40
-40
typ
typ
max
Unit
°C
Parameter
Symbol
Junction operating temperature
Tvj
125
60
Storage temperature range
Tstg
Ta
°C
Ambient operational temperature
Characteristic values
Parameter
50
°C
Conditions
min
max
8.5
3
Unit
K/kW
K/kW
Symbol
Thermal resistance junction-to-case
of GCT
Rth(j-c)
Double side cooled
Thermal resistance case-to-
heatsink of GCT
Rth(c-h)
Double side cooled
Analytical function for transient thermal
impedance:
n
Z (t)= R
i
(1- e-t/t i )
å
th(j-c)
i=1
i
1
2
3
4
Ri(K/kW)
5.562
0.5119
1.527
0.868
0.0091
0.545
0.0024
0.0896
ti(s)
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
·
·
·
calculated lifetime of on-board capacitors
20 years
with slightly forced air cooling (air velocity
> 0.5 m/s)
strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 4 of 9
5SHY 35L4512
Max. on-state characteristic model:
Max. on-state characteristic model:
VT125
VT25
= A +B ×IT +C ×ln(IT +1)+D × IT
= A +B ×IT +C ×ln(IT +1)+D × IT
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Tvj
Valid for iT = 300 – 30000 A
Valid for iT = 300 – 30000 A
B25 C25
663.9×10-3 123.2×10-6 79.71×10-3
A25
D25
A125
B125
C125
142.7×10-3
D125
0.0
178.0×10-3 159.8×10-6
0.0
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, half-
Fig. 6 Surge on-state current vs. number of pulses,
sine wave
half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 5 of 9
5SHY 35L4512
Fig. 7 GCT turn-off energy per pulse vs. turn-off
Fig. 8 Safe Operating Area
current
Fig. 9 Max. Gate Unit input power in chopper mode
Fig. 10 Burst capability of Gate Unit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 6 of 9
5SHY 35L4512
Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) VGIN (AC or DC+)
2) VGIN (AC or DC+)
3) Cathode
4) VGIN (AC or DC-)
5) VGIN (AC or DC-)
Fig. 12 Detail A: pin out of supply connector X1
AS-IGCT
Gate Unit
AS-GCT
Supply (VGIN
)
X1
Anode
Internal Supply (No galvanic isolation to power circuit)
LED1
Gate
LED2
LED3
LED4
Turn-
On
Circuit
Logic
Command Signal (Light)
Status Feedback (Light)
Cathode
Rx
CS
SF
Monitoring
Turn-
Off
Circuit
Tx
Fig. 13 Block diagram
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 7 of 9
5SHY 35L4512
Turn-on
External
Turn-off
Retrigger pulse
dIT/dt
VDM
ITM
VDSP
VD
VD
IT
0.9 VD
IT
0.4 ITGQ
0.1 VD
VD
CS
SF
CS
SF
CS
SF
tretrig
tdoff SF
tdoff
tdon SF
tdon
tr
ton
toff
Fig. 14 General current and voltage waveforms with IGCT - specific symbols
Li
LCL
LD
DUT
Rs
CCL
VDC
LLoad
Fig. 15 Test circuit
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1233-02 June 07
page 8 of 9
5SHY 35L4512
Related documents:
5SYA 2031
5SYA 2032
5SYA 2036
5SYA 2046
5SYA 2048
5SYA 2051
5SZK 9107
Applying IGCT Gate Units
Applying IGCTs
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Failure rates of IGCTs due to cosmic rays
Field measurements on High Power Press Pack Semiconductors
Voltage ratings of high power semiconductors
Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1233-02 June 07
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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