5SLX12K1711 [ABB]
Fast-Diode Die; 快速二极管管芯型号: | 5SLX12K1711 |
厂家: | THE ABB GROUP |
描述: | Fast-Diode Die |
文件: | 总3页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VRRM
IF
=
=
1700 V
150 A
Fast-Diode Die
5SLX 12K1711
x
Die size: 11.9 11.9 mm
Doc. No. 5SYA1662-01 Feb. 05
· Fast and soft reverse-recovery
· Low losses
· High SOA
· Passivation: SIPOS Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
1700
150
300
125
V
A
IFRM
Tvj
Limited by Tvjmax
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
Tvj = 25 °C 1.4
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
typ max Unit
1.65 2.0
1.7
V
V
Continuous forward voltage
VF
IR
IF = 150 A
100
3
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 1700 V
118
146
43
Irr
A
IF = 150 A,
µC
µC
ns
ns
mJ
mJ
VR = 900 V,
Qrr
trr
di/dt = 800 A/µs,
Ls = 800 nH,
Inductive load,
Switch:
73
460
660
32
Reverse recovery time
2x 5SMX12K1701
Reverse recovery energy
Erec
53
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12K1711
300
250
200
150
100
50
100
75
50
25
0
200
150
100
50
Vcc = 900 V
di/dt = 800 A/µs
Tvj = 125 °C
Ls = 800 nH
Irr
25°C
125°C
Qrr
Erec
0
0
0
50
100
150
200
250
300
0
0.5
1
1.5
2
2.5
IF [A]
VF [V]
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
200
150
100
50
200
100
75
50
25
0
200
VCC = 900 V
IF = 150 A
di/dt = 800 A/µs
Tvj = 125 °C
Vcc = 900 V
IF = 150 A
0
Tvj = 125 °C
Irr
Ls = 800 nH
Ls = 800 nH
150
-200
-400
-600
-800
100
IR
0
Qrr
Erec
-50
-100
-150
VR
50
-1000
-1200
0
0
400
800
1200 1600 2000 2400
time [ns]
0
200
400
600
800 1000 1200
di/dt [A/µs]
Typical diode reverse recovery behaviour
Typical reverse recovery vs. di/dt
Fig. 3
Fig. 4
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1662-01 Feb. 05
page 2 of 3
5SLX 12K1711
Mechanical properties
Parameter
Unit
x
L W
x
Overall die
mm
11.9 11.9
exposed
front metal
x
Dimensions
L W
x
mm
9.9 9.9
thickness
front (A)
back (K)
µm
µm
µm
385 ± 15
AlSi1
4
3)
Metallization
Al / Ti / Ni / Ag
1.2
3)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1662-01 Feb. 05
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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