5SLX12L2510 [ABB]
Fast-Diode Die; 快速二极管管芯
| 型号： | 5SLX12L2510 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Fast-Diode Die |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VRRM
IF
=
=
2500 V
100 A
Fast-Diode Die
5SLX 12L2510
x
Die size: 12.4 12.4 mm
Doc. No. 5SYA1664-02 Feb. 05
· Fast and soft reverse-recovery
· Low losses
· High SOA
· Passivation: SIPOS Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
2500
100
200
125
V
A
IFRM
Tvj
Limited by Tvjmax
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
Tvj = 25 °C 1.4
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
typ max Unit
1.75 2.0
1.8
V
V
Continuous forward voltage
VF
IR
IF = 100 A
1.5
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 2500 V
2.5
92
7
Irr
115
57
A
IF = 100 A,
µC
µC
ns
ns
mJ
mJ
VR = 1250 V,
di/dt = 440 A/µs,
Ls = 1200 nH,
Inductive load,
Switch:
Qrr
trr
98
900
1150
54
Reverse recovery time
2x 5SMX12L2510
Reverse recovery energy
Erec
92
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12L2510
200
180
160
140
120
100
80
150
125
100
75
25 °C
125 °C
Irr
Qrr
50
60
VR = 1250 V
Erec
di/dt = 440 A/µs
VGE = ±15 V
Tvj = 125 °C
40
25
20
Ls = 1.2 µH
0
0
0
0.5
1
1.5
2
2.5
0
50
100
150
200
VF [V]
IF [A]
Fig. 1
Typical forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
150
100
50
0
160
140
120
100
80
VR = 1250 V
IF = 100 A
di/dt = 440 A/µs
Tvj = 125 °C
-200
-400
-600
-800
-1000
-1200
-1400
Ls = 1.2 µH
0
IR
Qrr
-50
Erec
60
-100
-150
-200
Irr
40
VR = 1250 V
IF = 100 A
Tvj = 125 °C
Ls = 1.2 µH
VR
20
0
0
1000
2000
3000
4000
5000
0
100 200 300 400 500 600 700 800
di/dt [A/µs]
time [ns]
Typical reverse recovery behaviour
Typical reverse recovery characteristics
vs. di/dt
Fig. 3
Fig. 4
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1664-02 Feb. 05
page 2 of 3
5SLX 12L2510
Mechanical properties
Parameter
Unit
x
L W
x
Overall die
mm
12.4 12.4
exposed
front metal
x
Dimensions
L W
x
mm
10.38 10.38
thickness
front (A)
back (K)
µm
µm
µm
305 ± 20
AlSi1
4
3)
Metallization
Al / Ti / Ni / Ag
1.2
3)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1664-02 Feb. 05
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
相关型号：
©2020 ICPDF网 联系我们和版权申明