5SLX12M3301 [ABB]
Fast-Diode Die; 快速二极管管芯
| 型号： | 5SLX12M3301 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Fast-Diode Die |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VRRM
IF
=
=
3300 V
100 A
Fast-Diode Die
5SLX 12M3301
x
Die size: 13.6 13.6 mm
Doc. No. 5SYA1661-02 Feb. 05
· Fast and soft reverse-recovery
· Low losses
· High SOA
· Passivation: SIPOS Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
3300
100
200
125
V
A
IFRM
Tvj
Limited by Tvjmax
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
Tvj = 25 °C 2.0
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
typ max Unit
2.3
2.35
5
2.7
V
V
Continuous forward voltage
VF
IR
IF = 100 A
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 3300 V
2.5
115
140
65
7
Irr
A
IF = 100 A,
µC
µC
ns
ns
mJ
mJ
VR = 1800 V,
di/dt = 550 A/µs,
Ls = 1200 nH,
Inductive load,
Switch:
Qrr
trr
110
470
800
85
Reverse recovery time
2x 5SMX12M3300
Reverse recovery energy
Erec
145
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12M3301
200
175
150
125
100
75
250
200
150
100
50
VCC = 1800 V
di/dt = 550 A/µs
Tvj = 125 °C
25°C
Ls = 1200 nH
125°C
Erec
Irr
Qrr
50
25
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
50
100
150
200
250
VF [V]
IF [A]
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
150
100
50
2100
1400
700
200
175
150
125
100
75
400
VCC = 1800 V
IF = 100 A
di/dt = 550 A/µs
Tvj = 125 °C
VCC = 1800 V
IF = 100 A
350
Tvj = 125 °C
Ls = 1200 nH
Ls = 1200 nH
300
250
Irr
0
0
200
Erec
150
100
50
-50
-100
-150
-700
-1400
-2100
Qrr
50
25
0
0
0
2
4
6
8
0
200
400
600
800 1000 1200
time [us]
di/dt [A/µs]
Typical diode reverse recovery behaviour
Typical reverse recovery vs. di/dt
Fig. 3
Fig. 4
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1661-02 Feb. 05
page 2 of 3
5SLX 12M3301
Mechanical properties
Parameter
Unit
x
L W
x
Overall die
mm
mm
13.6 13.6
exposed
front metal
x
Dimensions
L W
x
10.38 10.38
thickness
front (A)
back (K)
µm
µm
µm
385 ± 15
AlSi1
4
3)
Metallization
Al / Ti / Ni / Ag
1.2
3)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1661-02 Feb. 05
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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