5SLX12M6500 [ABB]
Fast-Diode Die; 快速二极管管芯
| 型号： | 5SLX12M6500 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Fast-Diode Die |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VRRM
IF
=
=
6500 V
50 A
Fast-Diode Die
5SLX 12M6500
x
Die size: 13.6 13.6 mm
Doc. No. 5SYA1666-01 July 07
· Fast and soft reverse recovery
· Low losses
· Large SOA
· Passivation: SIPOS and Silicon Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
6500
50
V
A
Tvj ³ 25 °C
IFRM
Tvj
Limited by Tvjmax
100
125
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
typ max Unit
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
3.2
3.4
20
V
V
Continuous forward voltage
VF
IR
IF = 50 A
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 6500 V
3
6
70
Irr
80
A
IF = 50 A,
65
µC
µC
ns
ns
mJ
mJ
VR = 3600 V,
di/dt = 230 A/µs,
Ls = 3400 nH,
Inductive load,
Switch:
Qrr
trr
100
1700
2250
100
180
Reverse recovery time
2x 5SMX12M6500
Reverse recovery energy
Erec
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12M6500
100
90
80
70
60
50
40
30
20
10
0
250
200
150
100
50
VCC = 3600 V
di/dt = 230 A/µs
Tvj = 125 °C
Erec
Ls = 3.4 µH
125 °C
25 °C
Qrr
Irr
E rec [mJ] = -1.78 x 10 -2 x IF + 3.8 x IF + 34
2
0
0
1
2
3
4
5
0
10 20 30 40 50 60 70 80 90 100
IF [A]
VF [V]
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
200
150
100
50
60
0
VCC = 3600 V
IF = 50 A
Tvj = 125 °C
VR = 3600 V
IF = 50 A
-500
40
20
0
di/dt = 230 A/µs
Tvj = 125 °C
Ls = 3.4 µH
Erec
-1000
Ls = 3.4 µH
-1500
IR
Qrr
-20
-40
-2000
-2500
-3000
Irr
-60
VR
-80
-3500
-100
-4000
0
0
2000
4000
6000
8000
0
50
100
150
200
250
time [ns]
di/dt [A/µs]
Typical diode reverse recovery behaviour
Typical reverse recovery vs. di/dt
Fig. 3
Fig. 4
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1666-01 July 07
page 2 of 3
5SLX 12M6500
Mechanical properties
Parameter
Unit
x
L W
x
Overall die
mm
mm
13.6 13.6
exposed
front metal
x
Dimensions
L W
x
8.58 8.58
thickness
front (A)
back (K)
µm
µm
µm
670 ± 20
AlSi1
4
3)
Metallization
Al / Ti / Ni /Ag
1.2
3)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
8.58
±0.05
13.56
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1666-01 July 07
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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