5SLX12M1711 [ABB]
Fast-Diode Die; 快速二极管管芯
| 型号： | 5SLX12M1711 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Fast-Diode Die |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VRRM
IF
=
=
1700 V
200 A
Fast-Diode Die
5SLX 12M1711
x
Die size: 13.6 13.6 mm
Doc. No. 5SYA1663-01 Feb. 05
· Fast and soft reverse-recovery
· Low losses
· High SOA
· Passivation: SIPOS Nitride plus Polyimide
1)
Maximum rated values
Parameter
Symbol Conditions
min max Unit
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
VRRM
IF
1700
200
400
125
V
A
IFRM
Tvj
Limited by Tvjmax
A
-40
°C
1)
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
2)
Diode characteristic values
Parameter
Symbol Conditions
min
Tvj = 25 °C 1.4
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
typ max Unit
1.65 2.0
1.7
V
V
Continuous forward voltage
VF
IR
IF = 200 A
100
4
µA
mA
A
Continuous reverse current
Peak reverse recovery current
Recovered charge
VR = 1700 V
150
192
59
Irr
A
IF = 200 A,
µC
µC
ns
ns
mJ
mJ
VR = 900 V,
Qrr
trr
di/dt = 1000 A/µs,
Ls = 800 nH,
Inductive load,
Switch:
98
520
700
46
Reverse recovery time
2x 5SMX12M1701
Reverse recovery energy
Erec
75
2)
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLX 12M1711
400
350
300
250
200
150
100
50
150
125
100
75
300
250
200
150
100
50
Vcc = 900 V
di/dt = 1000 A/µs
Tvj = 125 °C
25°C
Ls = 800 nH
Irr
125°C
Qrr
50
Erec
25
0
0
0
0
50 100 150 200 250 300 350 400
IF [A]
0
0.5
1
1.5
2
2.5
VF [V]
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
300
200
100
0
200
100
75
50
25
0
200
VCC = 900 V
IF = 200 A
di/dt = 1000 A/µs
Tvj = 125 °C
Irr
V
cc = 900 V
IF = 200 A
0
Tvj = 125 °C
Ls = 800 nH
Ls = 800 nH
150
100
50
-200
-400
-600
-800
IR
Qrr
Erec
-100
-200
-300
-400
VR
-1000
0
-1200
0
200
400
600
800 1000 1200
0
400
800 1200 1600 2000 2400
time [ns]
di/dt [A/µs]
Typical diode reverse recovery behaviour
Typical reverse recovery vs. di/dt
Fig. 3
Fig. 4
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1663-01 Feb. 05
page 2 of 3
5SLX 12M1711
Mechanical properties
Parameter
Unit
x
L W
x
Overall die
mm
mm
13.6 13.6
exposed
front metal
x
Dimensions
L W
x
11.6 11.6
thickness
front (A)
back (K)
µm
µm
µm
385 ± 15
AlSi1
4
3)
Metallization
Al / Ti / Ni / Ag
1.2
3)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
A (Anode)
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1663-01 Feb. 05
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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