5SHZ08F6000 [ABB]
Reverse Blocking Integrated Gate-Commutated Thyristor; 反向阻断集成门极换流晶闸管
| 型号： | 5SHZ08F6000 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Reverse Blocking Integrated Gate-Commutated Thyristor |
| 文件： | 总8页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDRM
VRRM
ITGQM
VT0
= 6000 V
= 6000 V
Reverse Blocking Integrated
Gate-Commutated Thyristor
=
=
=
800 A
3.25 V
6.4
mΩ
5SHZ 08F6000
rT
Doc. No. 5SYA1231-01 Sep. 01
• Optimized for current source inverter (CSI)
• Fast response (tdon < 3 µs, tdoff < 7 µs)
• Precise timing (∆tdoff < 400 ns)
• Direct fiber optic control
• Status feedback
• Cosmic radiation withstand rating
• Very high EMI immunity
Blocking
VDRM
VRRM
IDRM
Repetitive peak off-state voltage
6000 V
6000 V
50 mA
50 mA
Reverse repetitive peak off-state
voltage
Repetitive peak off-state current
VD = VDRM
VR = VRRM
≤
≤
Reverse repetitive peak off-state
IRRM
current
Max. AC voltage for 100
FIT failure rate
0 ≤ Tjop ≤ 125 °C. Ambient cosmic
VAC
3600 V
radiation at sea level in open air.
Mechanical data (see Fig. 8)
min.
max.
12 kN
16 kN
Fm
Mounting force
Dp
H
m
DS
Da
l
Pole-piece diameter
Housing thickness
Weight IGCT
Surface creepage distance
Air strike distance
Length IGCT
47 mm
26 mm
1.00 kg
33 mm
13 mm
250 mm
44 mm
208 mm
±0.1 mm
±0.5 mm
≥
≥
+0/-0.5 mm
±1.0 mm
+0/-0.5 mm
h
w
Height IGCT
Width IGCT
ABB Semiconductors AG reserves the right to change specifications without notice.
5SHZ 08F6000
On-state (see Fig. 2)
ITAVM
ITRMS
VT
Max. average on-state current
290 A
450 A
8.40 V
3.25 V
Half sine wave, TC = 85 °C
Max. RMS on-state current
On-state voltage
IT
IT
=
=
800 A
≤
VT0
rT
Threshold voltage
Slope resistance
Tj = 125 °C
200 - 800 A
6.4
mΩ
Self commutation (VD > 0 V)
Turn-on switching (see Fig. 3, 10, 11)
Max. rate of rise of on-state
di/dtcrit
1300 A/µs
Tj = 0…125 °C
current
ton (min)
tdon
tr
Min. on-time
10 µs
3 µs
Turn-on delay time
Rise time
VD
IT
=
=
=
=
3000 V
800 A
Tj
=
125 °C
≤
≤
≤
1.5 µs
0.8 J
di/dt = 500 A/µs
Eon
Turn-on energy per pulse
RS
CS
10
Lcomm
LS
=
=
6 µH
Ω
0.1 µF
350 nH
Turn-off switching (see Fig. 4, 6, 10, 11)
ITGQM
Max. contr. turn-off current
800 A
Tj
=
0…125 °C
toff (min)
tf
Min. off-time
10 µs
4.0 µs
7.0 µs
7.2 J
Fall time
VD
ITGQ
RS
=
=
=
=
3000 V
800 A
Tj
VDM
Lcomm
LS
=
≤
=
=
125 °C
≤
≤
≤
tdoff
Eoff
Turn-off delay time
Turn-off energy per pulse
VDRM
10
6 µH
Ω
CS
0.1 µF
350 nH
Load commutation (VD < 0 V)
Turn-off switching (see Fig. 5, 6, 10, 11)
Max. rate of rise of on-state
di/dtcrit
1300 A/µs Tj = 0…125 °C
current
Irr
Reverse recovery current
Reverse recovery charge
Turn off energy per pulse
750 A
1500 µC
6.0 J
VD
IT
=
=
=
=
-3000 V
800 A
Tj
=
125 °C
≤
≤
≤
Qrr
Err
di/dt = 500 A/µs
RS
CS
10
Lcomm
LS
=
=
≤
6 µH
Ω
0.1 µF
350 nH
VRM
VRRM
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 3 of 8
5SHZ 08F6000
Gate Unit
Gate Unit
Power supply (see Fig. 7 to 10)
Without galvanic isolation to power
circuit.
VGDC
Gate Unit supply voltage
V
DC
20 0.5
PGin
X1
Gate Unit power consumption
Gate Unit power connector
58 W
≤
fS = 750 Hz, ITGQ = 400 A, δ = 0.33
Phoenix, Type MSTB 2.5/2-G-5.08 Au Note 1
Optical control input/output (see Fig. 8 to 10)
Pon CS Optical input power
Poff CS Optical noise power
Pon SF Optical output power
Poff SF Optical noise power
tGLITCH Pulse width threshold
>
-20 dBm
-45 dBm
-15 dBm
-50 dBm
400 ns
<
>
<
≤
Valid for 1mm plastic optical fibre
(POF)
Max. pulse width without response
CS
SF
Receiver for command signal
Transmitter for status feedback
Agilent, Type HFBR-2528 Note 2
Agilent, Type HFBR-1528 Note 2
Visual feedback (see Fig. 8, 9)
LED1 (green)
Power supply voltage ok
"Light" when power supply is within specified rang
"Light" when no short circuit, no open and mouning
LED2 (green)
Gate-cathode interface ok
force is applied.
LED3 (yellow)
LED4 (red)
LED5 (red)
Off gated
Off gated
Not ready (failure)
"Light" when gate-current is flowing
"Light" when GCT is off
(optional)
Note 1: Phoenix Contact, www.phoenixcontact.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 4 of 8
5SHZ 08F6000
Thermal
Tj
0…125
-40…60
0…60
Operating junction temperature range
Storage temperature range
°C
°C
°C
Tstg
Tamb
Ambient operational temperature range
Thermal resistance junction to case
Thermal resistance case to heatsink
23
RthJC
RthCH
K/kW Double side cooled
K/kW Double side cooled
≤
7.5
≤
Analytical function for transient thermal
impedance:
4
i
1
2
3
4
i
(1 - e -t /τi )
ZthJC (t) = å R
Ri (K/kW)
τi (s)
15.5
0.57
3.35
0.087
2.92
1.17
i=1
0.013 0.0035
ZthJC [K/kW]
Fm = 12...16 kN
Double side cooled
25
20
15
10
5
0
2
3
4
5
6
2
3
4
5
6
7
2
3
4
5
6
7
8
2
3
4
5 6 7 8
10-3
7 8 10-2
8 10-1
100
101
t [s]
Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 5 of 8
5SHZ 08F6000
E
on [J]
IT [A]
1.2
1200
Tj = 125 °C
Tj = 125°C
Tj = 25°C
1.0
0.8
0.6
0.4
0.2
0.0
1000
800
600
400
200
0
VD = 3000V
VD = 2000V
VD = 1000V
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
200
400
600
800
1000
VT [V]
IT [A]
Fig. 2 On-state characteristics.
Fig. 3 Turn-on energy per pulse
Self commutation (VD > 0 V)
Eoff [A]
8.0
Err [J]
8.0
Tj = 125 °C
Tj = 125 °C
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
7.0
VD = 3000V
VD = 2000V
VD = 3000V
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VD = 2000V
VD = 1000V
VD = 1000V
0
200
400
600
800
1000
ITGQ [A]
0
200
400
600
800
1000
IT [A]
Fig. 4 Turn-off energy per pulse
Self commutation (VD > 0 V).
Fig. 5 Turn-off energy per pulse
Load commutation (VD < 0 V).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 6 of 8
5SHZ 08F6000
I
TGQ [A]
P
Gin [W]
900
800
700
600
500
400
300
200
100
0
80
δ
duty cycle = 0.33
VD > 0 V
70
60
50
40
30
20
10
0
Tj = 0..125 °C
≤
VDM
VRM
Lcomm = 3...6
VDRM
VRRM
fs = 1000 Hz
≤
µ
H
µ
Cs = 0.1
F
fs = 750 Hz
Ω
Rs = 5...10
fs = 250 Hz
0
1000
2000
3000
4000
VD [V]
0
100
200
300
400
ITGQ [A]
Fig. 6 Max. repetitive turn-off current.
Fig. 7 Gate Unit power consumption.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 7 of 8
5SHZ 08F6000
Fig. 8 Device Outline Drawing.
Gate Unit
RB-GCT
Supply (20VDC
)
X1
Internal Supply (without galvanic isolation to power circuit)
Anode
Gate
LED1
LED2
LED3
LED4
LED5
Turn-
On
Circuit
Logic
Monitoring
Command Signal (Light)
Cathode
Rx
CS
SF
Turn-
Off
Status Feedback (Light)
Circuit
Tx
Fig. 9 Block diagram RB-IGCT.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1231-01 Sep. 01
page 8 of 8
5SHZ 08F6000
Turn-on (VD > 0 V)
Turn-off (VD > 0 V)
di/dt
VDM
VD
VD
0.9 VD
IT
IT
0.8 ITGQ
CS
0.3 ITGQ
0.1 VD
tr
CS
VG
VG
tf
tdoff
tdon
Turn-off (VD < 0 V)
di/dt
IT
VG
Irr
Qrr
VD
Fig. 10General current and voltage waveforms with RB-IGCT specific symbols.
½ Lcomm
LS
Ld
RS
CS
DUT1
+
CDC
LS
RS
CS
DUT2
½ Lcomm
Fig. 11Test circuit.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
Doc. No. 5SYA1231-01 Sep. 01
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
abbsem@ch.abb.com
www.abbsem.com
Email
Internet
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