首页 |元器件品牌

AP90T03GR [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP90T03GR
型号： AP90T03GR
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总4页 (文件大小：72K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP90T03GR  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower On- resistance  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
75A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-262(R)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS@4.5V  
ID@Tc=25℃  
ID@Tc=100℃  
IDM  
75  
A
Continuous Drain Current, VGS@4.5V  
Pulsed Drain Current1  
63  
A
350  
A
PD@Tc=25℃  
Total Power Dissipation  
96  
W
Linear Derating Factor  
0.7  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
1.3  
62  
Rthj-a  
Data and specifications subject to change without notice  
200120041  
AP90T03GR  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=1mA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=45A  
VGS=4.5V, ID=30A  
V/℃  
mΩ  
RDS(ON)  
-
4
-
0.8  
-
-
-
6
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=30V, VGS=0V  
VDS=24V ,VGS=0V  
VGS= ±20V  
3
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
55  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
1
-
-
25  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
ID=40A  
-
60  
8.5  
38  
14  
83  
66  
120  
96  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
-
VGS=4.5V  
-
-
VDS=15V  
-
-
ID=30A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.5Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
-
4090 6540  
VDS=25V  
-
1010  
890  
-
-
f=1.0MHz  
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=45A, VGS=0V  
IS=30A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
Reverse Recovery Time  
Reverse Recovery Charge  
51  
63  
-
-
nC  
Qrr  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
AP90T03GR  
200  
160  
120  
80  
160  
140  
120  
100  
80  
T C = 1 50 o C  
10V  
7.0V  
5.0V  
4.5V  
T C =25 o C  
10V  
7.0V  
5.0V  
4.5V  
V G =3.0V  
V G =3.0V  
60  
40  
40  
20  
0
0
0
1
2
3
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
1.8  
1.5  
1.3  
1.0  
0.8  
0.5  
0.3  
0.0  
5.0  
4.5  
4.0  
3.5  
I D = 45 A  
V G =10V  
I D =20A  
T C =25 o C  
Ω
Ω
Ω
Ω
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20  
15  
10  
5
2
1.5  
T j =150 o C  
T j =25 o C  
1
0.5  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
-50  
25  
100  
175  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP90T03GR  
f=1.0MHz  
C iss  
14  
10000  
1000  
100  
I
D = 40 A  
12  
10  
8
V DS =15V  
V DS =20V  
V DS =24V  
C oss  
C rss  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS ,Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
0.1  
1ms  
0.05  
PDM  
t
0.02  
10ms  
T
0.01  
T c =25 o C  
Duty factor = t/T  
Single Pulse  
100ms  
DC  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.01  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
V DS ,Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
tr  
td(on)  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  

相关型号：

AP90T03GS

 Lower On- resistance, Simple Drive Requirement
A-POWER

AP90T03GS-HF

 Lower On- resistance, Simple Drive Requirement
A-POWER

AP90T03P

 Lower On- resistance, Simple Drive Requirement
A-POWER

AP90T03P-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP90T06GP-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP90T10GP-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP90X

 KILOVAC AP90X-90 Amps
TE

AP9120AGH-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9120GH-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9120GH-HF_14

 Lower On-resistance
A-POWER

AP9120GH-HF_16

 Fast Switching Characteristic
A-POWER

AP9120GHJ-HF

 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER
©2020 ICPDF网 联系我们和版权申明