AP90T10GP-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP90T10GP-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP90T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
100V
7mΩ
125A
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
AP90T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
+20
125
120
80
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
ID@TC=25℃
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current (Chip)
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
A
A
A
320
250
2
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
W
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
0.5
62
Rthj-a
Data and specifications subject to change without notice
1
201303273
AP90T10GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
VGS=0V, ID=250uA
100
-
-
-
-
V
mΩ
V
-
7
5
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=10V, ID=40A
VDS=80V, VGS=0V
VGS= +20V, VDS=0V
ID=40A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
S
IDSS
IGSS
Qg
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-
25
+100
210 336
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=80V
43
65
-
-
-
-
-
-
VGS=10V
VDS=50V
34
ID=40A
100
115
95
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
13840 22140
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
755
260
2
-
-
f=1.0MHz
f=1.0MHz
4
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=40A, VGS=0V
Min. Typ. Max. Units
V
VSD
trr
-
-
-
-
1.3
Reverse Recovery Time
Reverse Recovery Charge
IS=10A, VGS=0V,
dI/dt=100A/µs
70
-
-
ns
nC
Qrr
220
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T10GP-HF
300
250
200
150
100
50
200
160
120
80
T C =150 o C
10V
T C =25 o C
10V
8.0V
7.0V
6.0V
8.0V
7.0V
6.0V
V G =5.0V
V G = 5.0V
40
0
0
0
4
8
12
16
20
24
0
4
8
12
16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
15
13
11
9
I D =40A
I D = 40A
V
G =10V
T
C = 25 o
C
Ω
7
5
-50
0
50
100
150
3
4
5
6
7
8
9
10
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
2.0
1.6
1.2
0.8
0.4
0.0
I D =250uA
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T10GP-HF
f=1.0MHz
C iss
12
16000
12000
8000
4000
0
I D =40A
V
DS =80V
10
8
6
4
2
C oss
C rss
25
0
0
50
100
150
200
250
1
5
9
13
17
21
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Duty factor = 0.5
Operation in this area
limited by R
DS(ON)
0.2
100
10
1
100us
0.1
0.1
1ms
10ms
100ms
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
DC
Single Pulse
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
120
80
40
0
VG
Limited by package
QG
10V
QGS
QGD
Q
Charge
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
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