AP9120AGH-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9120AGH-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9120AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-200V
680mΩ
-8A
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
Description
G
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
-200
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-8
A
-5
-30
A
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation3
96
W
W
℃
℃
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
1.3
Rthj-a
62.5
Data and specifications subject to change without notice
1
201107121
AP9120AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=0V, ID=-250uA
-200
-
-
-
-
V
-
-
680 mΩ
1000 mΩ
VGS=-4.5V, ID=-2A
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5A
VDS=-160V, VGS=0V
VGS= +20V, VDS=0V
ID=-5A
-1
-
-
7.8
-
-3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-25
-
-
+100
Qg
-
39
3.3
14.5
9
62
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=-160V
VGS=-10V
-
-
-
VDS=-100V
ID=-5A
-
-
-
14
70
40
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω
-
-
VGS=-10V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
-
1100 1760
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=-25V
-
185
55
-
-
f=1.0MHz
-
f=1.0MHz
-
3.5
7
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-5A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.5
V
ns
uC
Reverse Recovery Time
Reverse Recovery Charge
IS=-5A, VGS=0V,
dI/dt=-100A/µs
170
1.45
-
-
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9120AGH-HF
28
24
20
16
12
8
20
16
12
8
-10V
-8.0V
-7.0V
-6.0V
-10V
-7.0V
-6.0V
-5.0V
T C = 1 5 0 o C
T C =25 o C
V
G = -5.0V
V G = - 4.0V
4
4
0
0
0
10
20
30
40
0
10
20
30
40
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
580
2.4
1.9
1.4
0.9
0.4
I D = -2 A
I D =- 4 A
T
C =25 ℃
V
G =-10V
560
540
520
500
480
460
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
10
I D =-250uA
1
T j =150 o
C
T j =25 o C
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9120AGH-HF
f=1.0MHz
12
2000
1600
1200
800
400
0
I D = -5A
V
DS = -160V
10
8
C iss
6
4
2
C oss
C rss
29
0
1
5
9
13
17
21
25
0
10
20
30
40
50
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
Operation in this area
100us
limited by R
DS(ON)
0.2
0.1
1ms
0.1
0.05
PDM
10ms
t
100ms
0.02
T
DC
0.01
T C =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.1
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
10
V
DS = -5V
8
8
T j =25 o C
6
6
T j =150 o C
4
4
2
2
0
0
0
2
4
6
8
25
50
75
100
125
150
T C , Case Temperature ( o C )
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
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