首页 |元器件品牌

AP90T03P [A-POWER]

Lower On- resistance, Simple Drive Requirement; 更低的导通电阻，简单的驱动要求
AP90T03P
型号： AP90T03P
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Lower On- resistance, Simple Drive Requirement
更低的导通电阻，简单的驱动要求

驱动
文件： 总5页 (文件大小：152K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP90T03P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
▼ Lower On- resistance  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
75A  
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
S
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
power applications and suited for low voltage applications such as  
DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current, VGS@10V3  
±20  
75  
V
ID@Tc=25℃  
ID@Tc=100℃  
IDM  
A
Continuous Drain Current, VGS@10V  
Pulsed Drain Current1  
63  
A
350  
96  
A
PD@Tc=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
0.7  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
1.3  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200802183  
AP90T03P  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=45A  
VGS=0V, ID=1mA  
30  
-
-
-
-
-
V
4
6
mΩ  
mΩ  
VGS=4.5V, ID=30A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
0.8  
-
55  
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=150oC)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
V
DS=30V, VGS=0V  
1
VDS=24V ,VGS=0V  
VGS= ±20V  
ID=40A  
-
25  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
±100  
60  
8.5  
38  
14  
83  
66  
120  
96  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=4.5V  
VDS=15V  
-
-
ID=30A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.5Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
4090 6540  
VDS=25V  
1010  
890  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=45A, VGS=0V  
IS=30A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
51  
63  
-
-
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Package limitation current is 75A, calculated continuous current  
based on maximum allowable junction temperature is 125A.  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2
AP90T03P  
200  
160  
120  
80  
160  
140  
120  
100  
80  
T C =25 o  
10V  
7.0V  
5.0V  
T C = 1 50 o  
10V  
7.0V  
5.0V  
4.5V  
V G =3.0V  
4.5V  
V G =3.0V  
60  
40  
40  
20  
0
0
0
1
2
3
4
5
0
1
2
3
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
1.8  
1.5  
1.3  
1.0  
0.8  
0.5  
0.3  
0.0  
6.0  
5.0  
4.0  
3.0  
I D = 45 A  
I D =20A  
T
C =25 o  
V
G =10V  
-50  
0
50  
100  
150  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20  
2
1.5  
1
15  
10  
5
T j =150 o  
T j =25 o  
0.5  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP90T03P  
f=1.0MHz  
Ciss  
10000  
1000  
100  
14  
I
D = 40  
12  
10  
8
V DS =15V  
V
V
DS =20V  
DS =24V  
Coss  
Crss  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
1
5
9
13  
17  
21  
25  
29  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
t
0.02  
T
10ms  
0.01  
100ms  
DC  
Duty factor = t/T  
Single Pulse  
T c =25 o C  
Peak Tj = PDM x Rthjc + TC  
Single  
0.01  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
V DS ,Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
td(off)  
tr  
td(on)  
tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-220  
E1  
A
E
Millimeters  
SYMBOLS  
MIN  
NOM  
4.48  
0.80  
1.38  
0.50  
1.20  
MAX  
φ
L1  
L5  
L2  
A
b
4.25  
0.65  
1.15  
0.40  
1.00  
4.70  
0.90  
1.60  
0.60  
1.40  
c1  
b1  
c
c1  
E
9.70 10.00 10.40  
E1  
e
---  
---  
11.50  
----  
D
L4  
----  
2.54  
L
12.70 13.60 14.50  
L1  
L2  
L3  
L4  
L5  
φ
D
2.60  
1.00  
2.6  
2.80  
1.40  
3.10  
3.00  
1.80  
3.6  
b1  
L3  
14.70 15.50  
16  
6.30  
3.50  
8.40  
6.50  
3.60  
8.90  
6.70  
3.70  
9.40  
L
c
b
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
e
Part Marking Information & Packing : TO-220  
Part Number  
Package Code  
90T03P  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

相关型号：

AP90T03P-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP90T06GP-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP90T10GP-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP90X

 KILOVAC AP90X-90 Amps
TE

AP9120AGH-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9120GH-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9120GH-HF_14

 Lower On-resistance
A-POWER

AP9120GH-HF_16

 Fast Switching Characteristic
A-POWER

AP9120GHJ-HF

 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9120GJ-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9120GJ-HF_14

 Simple Drive Requirement
A-POWER

AP919

 iphone音箱方案
ETC
©2020 ICPDF网 联系我们和版权申明