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AP90T03P-HF [A-POWER]

TRANSISTOR POWER, FET, FET General Purpose Power;
AP90T03P-HF
型号： AP90T03P-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR POWER, FET, FET General Purpose Power

晶体 晶体管 功率场效应晶体管 开关 脉冲 驱动
文件： 总6页 (文件大小：212K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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AP90T03GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Lower On- resistance  
BVDSS  
RDS(ON)  
ID  
30V  
4mΩ  
75A  
D
S
▼ Simple Drive Requirement  
▼ Fast Switching Characteristic  
G
Description  
G
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP90T03GJ)  
is available for low-profile applications.  
D
S
TO-252(H)  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
75  
A
63  
A
350  
A
PD@TC=25℃  
Total Power Dissipation  
96  
W
Linear Derating Factor  
0.7  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
1.3  
Unit  
℃/W  
℃/W  
Rthj-c  
Rthj-a  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
110  
Data & specifications subject to change without notice  
1
200802182  
AP90T03GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=45A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
V
4
6
mΩ  
mΩ  
VGS=4.5V, ID=30A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS= ±20V  
0.8  
-
55  
-
3
-
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=150oC)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
1
-
25  
±100  
96  
j
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
ID=40A  
60  
8.5  
38  
14  
83  
66  
120  
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=4.5V  
VDS=15V  
-
-
-
-
ID=30A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.5Ω  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
4090 6540  
VDS=25V  
1010  
890  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=45A, VGS=0V  
IS=30A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
51  
63  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2
AP90T03GH/J  
200  
160  
120  
80  
160  
140  
120  
100  
80  
T C =25 o C  
T C = 1 50 o  
C
10V  
7.0V  
5.0V  
10V  
7.0V  
5.0V  
4.5V  
4.5V  
V G =3.0V  
V G =3.0V  
60  
40  
40  
20  
0
0
0
1
2
3
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
1.8  
1.5  
1.3  
1.0  
0.8  
0.5  
0.3  
0.0  
5.0  
4.5  
4.0  
3.5  
I D = 45 A  
I D =20A  
V
G =10V  
T
C =25 o C  
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
20  
15  
10  
5
2
1.5  
1
T j =150 o C  
T j =25 o C  
0.5  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP90T03GH/J  
f=1.0MHz  
10000  
1000  
100  
14  
I D = 40 A  
12  
Ciss  
V DS =15V  
10  
8
V
V
DS =20V  
DS =24V  
Coss  
Crss  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
1
5
9
13  
17  
21  
25  
29  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
100us  
0.1  
1ms  
0.05  
PDM  
t
10ms  
100ms  
0.02  
T
0.01  
Duty factor = t/T  
Single Pulse  
T c =25 o C  
Peak Tj = PDM x Rthjc + TC  
DC  
Single Pulse  
0.01  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
V DS ,Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
tr  
td(on)  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.5  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
F1  
E1  
E2  
e
E1  
5.10  
0.50  
--  
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Part Number  
Package Code  
meet Rohs requirement  
90T03GH  
LOGO  
Date Code (YWWSSS)  
YWWSSS  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5
ADVANCED POWER ELECTRONICS CORP.  
D
Millimeters  
A
SYMBOLS  
MIN  
NOM  
MAX  
c1  
D1  
Original Original Original  
A
A1  
B1  
B2  
c
2.10  
0.60  
0.40  
0.60  
0.40  
0.40  
6.00  
4.80  
5.00  
1.20  
----  
2.30  
1.20  
0.60  
0.95  
0.50  
0.55  
6.50  
5.40  
5.50  
1.70  
2.30  
---  
2.50  
1.80  
0.80  
1.25  
0.65  
0.70  
7.00  
5.90  
6.00  
2.20  
----  
E2  
E
E1  
c1  
D
A1  
D1  
E1  
E2  
e
B2  
B1  
F
F
7.00  
16.70  
1.All Dimensions Are in Millimeters.  
c
2.Dimension Does Not Include Mold Protrusions.  
e
e
Part Marking Information & Packing : TO-251  
Part Number  
meet Rohs requirement  
Package Code  
90T03GJ  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y ：Last Digit Of The Year  
WW：Week  
SSS ：Sequence  
6

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