AP90T03GS [A-POWER]
Lower On- resistance, Simple Drive Requirement; 更低的导通电阻,简单的驱动要求型号: | AP90T03GS |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Lower On- resistance, Simple Drive Requirement |
文件: | 总5页 (文件大小:166K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP90T03GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Lower On- resistance
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V3
±20
V
ID@Tc=25℃
ID@Tc=100℃
IDM
75
A
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
63
A
350
A
PD@Tc=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.7
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
1.3
62
Rthj-a
Data and specifications subject to change without notice
1
200802183
AP90T03GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=0V, ID=1mA
30
-
-
-
-
-
V
4
6
mΩ
mΩ
VGS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=30A
0.8
-
55
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS=30V, VGS=0V
1
VDS=24V ,VGS=0V
VGS= ±20V
ID=40A
-
25
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
60
8.5
38
14
83
66
120
96
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
VDS=15V
-
-
ID=30A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.5Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
4090 6540
VDS=25V
1010
890
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
ns
51
63
-
-
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP90T03GS
200
160
120
80
160
140
120
100
80
T C =25 o
T C = 1 50 o
10V
7.0V
5.0V
4.5V
V G =3.0V
10V
7.0V
5.0V
4.5V
V G =3.0V
60
40
40
20
0
0
0
1
2
3
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
6.0
5.0
4.0
3.0
I D = 45
A
I D =20A
T
C =25 o
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
15
10
5
2
1.5
1
T j =150 o
T j =25 o
0.5
0
0
-50
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GS
f=1.0MHz
C iss
10000
1000
100
14
I D = 40
12
V DS =15V
10
8
V
V
DS =20V
DS =24V
C oss
C rss
6
4
2
0
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
t
0.02
10ms
100ms
T
0.01
Duty factor = t/T
Single Pulse
T c =25 o C
Peak Tj = PDM x Rthjc + TC
DC
Single
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
Millimeters
SYMBOLS
MIN
NOM MAX
A
A1
A2
b
4.25
0.00
2.20
0.70
1.07
0.30
1.15
8.30
4.75
0.15
2.45
0.90
1.27
0.45
1.30
8.90
5.20
0.30
2.70
1.10
1.47
0.60
1.45
9.40
D
b1
c
c1
D
b1
b
L2
E
9.70 10.10 10.50
L3
e
2.04
-----
4.50
-----
2.54
1.50
4.90
1.50
3.04
-----
5.30
----
L2
L3
L4
L4
A2
e
A
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
90T03GS
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
相关型号:
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