AP90T03GS-HF [A-POWER]
Lower On- resistance, Simple Drive Requirement; 更低的导通电阻，简单的驱动要求
| 型号： | AP90T03GS-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Lower On- resistance, Simple Drive Requirement |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP90T03GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On- resistance
BVDSS
RDS(ON)
ID
30V
4mΩ
75A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V3
+20
V
ID@Tc=25℃
ID@Tc=100℃
IDM
75
A
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
63
A
350
A
PD@Tc=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation4
96
W
W
℃
℃
3.12
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
1.3
40
Rthj-a
Data and specifications subject to change without notice
1
201209184
AP90T03GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=0V, ID=1mA
30
-
-
-
-
-
V
4
6
mΩ
mΩ
VGS=4.5V, ID=30A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
VDS=VGS, ID=250uA
VDS=10V, ID=30A
0.8
-
55
-
3
V
gfs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS=30V, VGS=0V
1
VDS=24V ,VGS=0V
VGS= +20V, VDS=0V
ID=40A
-
250
IGSS
Qg
-
+100
60
8.5
38
14
83
66
120
96
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=24V
VGS=4.5V
VDS=15V
-
-
ID=30A
-
td(off)
tf
Turn-off Delay Time
RG=3.3Ω
VGS=10V
-
Fall Time
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
4090 6540
Output Capacitance
VDS=25V
1010
890
-
-
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
ns
51
63
-
-
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T03GS-HF
200
160
120
80
160
140
120
100
80
T C =25 o
T C = 1 50 o
10V
7.0V
5.0V
4.5V
V G =3.0V
10V
7.0V
5.0V
4.5V
V G =3.0V
60
40
40
20
0
0
0
1
2
3
4
5
0
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
6.0
5.0
4.0
3.0
I D = 45
A
I D =20A
T
C =25 o
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
15
10
5
2
1.5
1
T j =150 o
T j =25 o
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GS-HF
f=1.0MHz
C iss
12
10000
1000
100
I
D = 40
10
8
V DS =15V
DS =20V
V
V
DS =24V
C oss
C rss
6
4
2
0
1
5
9
13
17
21
25
29
0
20
40
60
80
100
120
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
t
0.02
T
10ms
0.01
Duty factor = t/T
100ms
DC
T c =25 o C
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
td(off)
tr
td(on)
tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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