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SUD50N02-06-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SUD50N02-06-E3
型号： SUD50N02-06-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

脉冲 晶体管
文件： 总5页 (文件大小：82K)
中文：  中文翻译
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SUD50N02-06  
Vishay Siliconix  
N-Channel 20-V (D-S), 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)a, b  
D 175_C Maximum Junction Temperature  
D 100% Rg Tested  
0.006 @ V = 4.5 V  
30  
25  
GS  
20  
0.009 @ V = 2.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD50N02-06  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"12  
30  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
A
a, b  
Continuous Drain Current  
I
D
T
A
21  
A
Pulsed Drain Current  
I
100  
30  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
T
T
= 25_C  
= 25_C  
100  
C
Maximum Power Dissipation  
P
D
W
a, b  
8.3  
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec.  
15  
18  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
40  
50  
_C/W  
Maximum Junction-to-Case  
1.2  
1.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board  
b. t v 10 sec.  
Document Number: 71136  
S-31724—Rev. C, 18-Aug-03  
www.vishay.com  
1
SUD50N02-06  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
V
= 0 V, I = 250 mA  
D
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
20  
GS  
(BR)DSS  
V
V
V
DS  
= V , I = 250 mA  
0.6  
GS(th)  
GS  
D
V
DS  
= 0 V, V = "12 V  
GS  
I
"100  
1
nA  
GSS  
V
= 20 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 20 V, V = 0 V, T = 125_C  
50  
DS  
GS  
J
b
On-State Drain Current  
I
V
DS  
= 5 V, V = 4.5 V  
50  
20  
A
D(on)  
GS  
V
= 4.5 V, I = 30 A  
0.006  
0.009  
0.009  
GS  
D
b
V
= 4.5 V, I =30 A, T = 125_C  
V
Drain-Source On-State Resistance  
r
W
GS  
D
J
DS(on)  
= 2.5 V, I = 20 A  
D
GS  
b
Forward Transconductance  
g
fs  
V
= 5 V, I = 30 A  
S
DS  
D
Dynamica  
Input Capacitance  
C
C
6600  
1150  
600  
65  
iss  
V
GS  
= 0 V, V = 20 V, f = 1 MHz  
DS  
Output Capacitance  
pF  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
130  
g
c
Gate-Source Charge  
Q
Q
13  
V
DS  
= 10 V, V = 4.5 V, I = 50 A  
nC  
gs  
gd  
GS  
D
c
Gate-Drain Charge  
14  
Gate Resistance  
R
1
3.1  
40  
W
g
c
Turn-On Delay Time  
t
25  
120  
80  
d(on)  
c
Rise Time  
t
r
180  
120  
150  
V
= 10 V, R = 0.2 W  
L
GEN G  
DD  
ns  
c
I
D
^ 50 A, V  
= 4.5 V, R = 2.5 W  
Turn-Off Delay Time  
t
d(off)  
c
Fall Time  
t
f
100  
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Pulsed Current  
I
100  
1.5  
A
V
SM  
b
Diode Forward Voltage  
V
SD  
I
F
= 100 A, V = 0 V  
1.2  
45  
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 50 A, di/dt = 100 A/ms  
100  
ns  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
c. Independent of operating temperature.  
Document Number: 71136  
S-31724—Rev. C, 18-Aug-03  
www.vishay.com S FaxBack 408-970-5600  
2
SUD50N02-06  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
120  
100  
80  
60  
40  
20  
0
3.5 V  
3 V  
V
GS  
= 4.5, 4 V  
200  
150  
100  
50  
2.5 V  
T
= 125_C  
C
2 V  
25_C  
1 V  
1.5 V  
-55_C  
0
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
160  
120  
80  
40  
0
T
= -55_C  
C
25_C  
V
GS  
= 2.5 V  
125_C  
V
GS  
= 4.5 V  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
I
D
- Drain Current (A)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
10000  
8000  
6000  
4000  
2000  
0
12  
9
V
D
= 10 V  
DS  
I
= 50 A  
C
iss  
6
3
C
oss  
C
rss  
0
0
4
8
12  
16  
20  
0
30  
60  
90  
120  
150  
V
DS  
- Drain-to-Source Voltage (V)  
Q
g
- Total Gate Charge (nC)  
Document Number: 71136  
S-31724—Rev. C, 18-Aug-03  
www.vishay.com  
3
SUD50N02-06  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistancevs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.0  
100  
V
D
= 4.5 V  
GS  
I
= 30 A  
1.6  
1.2  
0.8  
0.4  
0.0  
T = 150_C  
J
T = 25_C  
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0
0.3  
0.6  
0.9  
1.2  
1.5  
T
- Junction Temperature (_C)  
V
SD  
- Source-to-Drain Voltage (V)  
J
THERMAL RATINGS  
Maximum Avalanche Drain Current  
vs. Ambient Temperature  
Safe Operating Area  
1000  
40  
32  
24  
16  
8
Limited  
DS(on)  
by r  
100  
10 ms  
100 ms  
10  
1
1 ms  
10 ms  
100 ms  
1 s  
10 s  
100 s  
T
= 25_C  
A
0.1  
Single Pulse  
dc  
0
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
T
A
- Case Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 40_C/W  
thJA  
(t)  
3. T  
- T = P  
Z
JM  
A
DM thJA  
Single Pulse  
10  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 71136  
S-31724—Rev. C, 18-Aug-03  
www.vishay.com S FaxBack 408-970-5600  
4
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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