SUD50N02-06P-E3 [VISHAY]
TRANSISTOR 26 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power;
| 型号： | SUD50N02-06P-E3 |
| 厂家： | 
VISHAY |
| 描述： | TRANSISTOR 26 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N02-06P
Vishay Siliconix
N-Channel 20 V (D-S) 175 °C MOSFET
FEATURES
TrenchFET® Power MOSFET
PRODUCT SUMMARY
•
•
•
•
•
I
D (A)a
26
VDS (V)
RDS(on) (Ω)
175 °C Junction Temperature
PWM Optimized for High Efficiency
100 % Rg Tested
0.0060 at VGS = 10 V
0.0095 at VGS = 4.5 V
20
21
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Synchronous Buck DC/DC Conversion
- Desktop
- Server
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD50N02-06P-E3 (Lead (Pb) free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
26a
TA = 25 °C
C = 25 °C
Continuous Drain Currenta
ID
50b
100
26
T
IDM
IS
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IAS
EAS
Avalanche Current
45
L = 0.1 mH
Single Pulse Avalanche Energy
101
mJ
W
6.8a
65
TA = 25 °C
TC = 25 °C
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t ≤ 10 s
Steady State
18
40
22
50
Maximum Junction-to-Ambienta
RthJA
°C/W
RthJC
Maximum Junction-to-Case
1.9
2.3
Notes:
a. Surface mounted on FR4 board, t ≤ 10 s.
b. Limited by package.
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Typ.a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
20
V
nA
µA
A
0.8
3
VDS = 0 V, VGS
=
20 V
100
1
VDS = 20 V, VGS = 0 V
DS = 20 V, VGS = 0 V, TJ = 125 °C
VDS = 5 V, VGS = 10 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currentb
V
50
ID(on)
50
15
VGS = 10 V, ID = 20 A
0.0046
0.0073
0.006
0.0084
0.0095
Drain-Source On-State Resistanceb
rDS(on)
gfs
V
GS = 10 V, ID = 20 A, TJ = 125 °C
GS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Ω
V
Forward Transconductanceb
Dynamica
S
Ciss
Coss
Crss
Qg
Input Capacitance
2550
900
415
19
VGS = 0 V, VDS = 10 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 50 A
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
30
Qgs
Qgd
Rg
7.5
6
nC
0.5
1.5
11
2.4
20
15
35
15
Ω
td(on)
tr
td(off)
tf
V
DD = 10 V, RL = 0.2 Ω
10
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
24
9
Source-Drain Diode Ratings and Characteristic (TC = 25 °C)
ISM
VSD
trr
A
V
Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
100
1.5
70
IF = 50 A, VGS = 0 V
1.2
35
IF = 50 A, dI/dt = 100 A/µs
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C unless noted)
160
100
80
60
40
20
0
140
V
GS
= 10 thru 5 V
120
100
80
60
40
20
0
4 V
T
= 125 °C
C
3 V
2 V
25 °C
- 55 °C
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
V
GS
Output Characteristics
Transfer Characteristics
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Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
0.010
0.008
0.006
0.004
0.002
0.000
T
= - 55 °C
C
80
60
40
20
0
25 °C
V
GS
= 4.5 V
125 °C
V
V
= 6.3 V
= 10 V
GS
GS
0
10
20
30
40
50
0
0
0
20
40
60
80
100
I
- Drain Current (A)
I
D
- Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
3500
3000
2500
2000
1500
1000
500
10
8
V
I
= 10 V
= 50 A
DS
D
C
iss
6
4
C
oss
C
rss
2
0
0
8
16
24
32
40
0
4
8
12
16
20
Q
- Total Gate Charge (nC)
g
V
- Drain-to-Source Voltage (V)
DS
Capacitance
Gate Charge
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
D
= 10 V
= 30 A
GS
I
T = 150 °C
J
T = 25 °C
J
0.3
0.6
0.9
1.2
1.5
- 50 - 25
0
25
50
75 100 125 150 175
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N02-06P
Vishay Siliconix
THERMAL RATINGS
40
1000
Limited
by R
*
DS(on)
32
24
16
8
100
10
10, 100 µs
1 ms
10 ms
100 ms
1
1 s
10 s
T
A
= 25 °C
100 s, DC
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
- Drain-to-Source Voltage (V)
V
T
A
- Ambient Temperature (°C)
DS
>
* V
GS
minimum V
at which R
is specified
GS
DS(on)
Maximum Drain Current
vs. Ambient Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71931.
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Document Number: 71931
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
E
A
MILLIMETERS
INCHES
MAX.
C2
b3
DIM.
A
MIN.
MAX.
2.38
0.127
0.88
1.14
5.46
0.61
0.89
6.22
-
MIN.
0.086
-
2.18
-
0.094
0.005
0.035
0.045
0.215
0.024
0.035
0.245
-
A1
b
0.64
0.76
4.95
0.46
0.46
5.97
4.10
6.35
4.32
9.40
0.025
0.030
0.195
0.018
0.018
0.235
0.161
0.250
0.170
0.370
b2
b3
C
C2
D
D1
E
6.73
-
0.265
-
E1
H
b
C
b2
e
10.41
0.410
A1
e1
e
2.28 BSC
4.56 BSC
1.40
0.090 BSC
0.180 BSC
e1
L
1.78
1.27
1.02
1.52
0.055
0.070
0.050
0.040
0.060
L3
L4
L5
0.89
-
0.035
-
1.01
0.040
ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347
E1
Notes
•
•
Dimension L3 is for reference only.
Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(1.397)
(4.572)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72594
Revision: 21-Jan-08
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3
Legal Disclaimer Notice
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Vishay
Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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