SUD50N02-11P-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUD50N02-11P-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N02-11P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)a
0.011 @ V = 10 V
18
GS
20
APPLICATIONS
0.020 @ V = 4.5 V
GS
13.5
D High-Side Synchronous Buck DC/DC
Conversion
− Desktop
− Server
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD50N02-11P
SUD50N02-11P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
"20
18
DS
GS
V
V
T
= 25_C
A
a
Continuous Drain Current
I
D
T = 100_C
C
13
A
Pulsed Drain Current
I
100
4.1
DM
a
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 25_C
6.25
A
Maximum Power Dissipation
P
D
W
a
T
38
C
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
19
40
24
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
3.2
3.9
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72094
S-41168—Rev. B, 14-Jun-04
www.vishay.com
1
SUD50N02-11P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
20
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
0.8
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 20 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 20 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0086
0.016
0.011
0.0165
0.020
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1190
435
190
3.5
9.2
4
iss
V
= 0 V, V = 10 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
GS
oss
C
rss
R
1.7
5.5
14
g
c
Total Gate Charge
Q
g
c
Gate-Source Charge
Q
Q
V
= 10 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
3
c
Turn-On Delay Time
t
11
20
15
45
15
d(on)
c
Rise Time
t
r
10
30
9
V
= 10 V, R = 0.2 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
50
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
25
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
80
60
40
20
0
T
= −55_C
25_C
C
V
GS
= 10 thru 6 V
80
60
40
20
0
5 V
4 V
3 V
125_C
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72094
S-41168—Rev. B, 14-Jun-04
www.vishay.com
2
SUD50N02-11P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
60
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
T
= −55_C
C
50
40
30
20
10
0
V
GS
= 4.5 V
25_C
125_C
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
10
8
1600
1200
800
400
0
V
I
= 10 V
DS
D
C
iss
= 50 A
6
4
C
oss
C
rss
2
0
0
4
8
12
16
20
0
4
8
12
Q − Total Gate Charge (nC)
g
16
20
24
V
− Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
GS
= 10 V
I
D
= 30 A
T = 150_C
J
T = 25_C
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
J
SD
Document Number: 72094
S-41168—Rev. B, 14-Jun-04
www.vishay.com
3
SUD50N02-11P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
20
16
12
8
Limited
by r
DS(on)
10, 100 ms
100
10
1 ms
10 ms
100 ms
1 s
1
10 s
100 s
dc
T
= 25_C
A
4
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Document Number: 72094
S-41168—Rev. B, 14-Jun-04
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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