SUD50N024-06 [VISHAY]
N-Channel 22-V (D-S) 175C MOSFET; N通道22 -V （D -S ） 175C MOSFET
| 型号： | SUD50N024-06 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 22-V (D-S) 175C MOSFET |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
ID (A)d
D 175_C Junction Temperature
VDS (V)
rDS(on) (W)
D PWM Optimized for High Efficiency
APPLICATIONS
0.006 @ V = 10 V
80
64
GS
C
24
0.0095 @ V = 4.5 V
GS
D Synchronous Buck DC/DC Conversion
- Desktop
- Server
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50N024-06P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
C
Drain-Source Pulse Voltage
V
24
DS(pulse)
V
Drain-Source Voltage
Gate-Source Voltage
V
22
DS
V
I
"20
GS
d
T
= 25_C
80
C
a
Continuous Drain Current
I
D
d
T = 100_C
C
56
Pulsed Drain Current
100
26
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
I
S
L = 0.1 mH
I
AS
45
Avalanche Energy, Single Pulse
E
AS
101
mJ
a
T
= 25_C
= 25_C
6.8
A
Maximum Power Dissipation
P
D
W
T
65
C
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
18
40
22
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.9
2.3
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: T = 105_C, 50 ns, 300 kHz operation
A
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
www.vishay.com
1
SUD50N024-06P
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
22
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
0.8
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 16 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 16 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0046
0.0073
0.006
0.0084
0.0095
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
2550
900
415
1.5
19
iss
V
GS
= 0 V, V = 10 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
oss
C
rss
R
G
c
Total Gate Charge
Q
30
g
c
Gate-Source Charge
Q
Q
7.5
6.0
11
V
D
= 10 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
20
15
35
15
d(on)
c
Rise Time
t
10
r
V
DD
= 10 V, R = 0.2 W
L
ns
c
I
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
24
GEN G
d(off)
c
Fall Time
t
9
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
160
140
V
GS
= 10 thru 5 V
120
100
80
60
40
20
0
4 V
T
= 125_C
C
3 V
2 V
25_C
-55_C
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
www.vishay.com
2
SUD50N024-06P
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
100
0.010
0.008
0.006
0.004
0.002
0.000
T
= -55_C
C
80
60
40
20
0
25_C
V
GS
= 4.5 V
125_C
V
V
= 6.3 V
= 10 V
GS
GS
0
10
20
30
40
50
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
Gate Charge
3500
3000
2500
2000
1500
1000
500
10
8
V
I
= 10 V
= 50 A
DS
D
C
iss
6
4
C
oss
C
rss
2
0
0
0
4
8
12
16
20
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
-50 -25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
www.vishay.com
3
SUD50N024-06P
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
40
32
24
16
8
Limited
by r
DS(on)
10, 100 ms
100
10
1 ms
10 ms
100 ms
1 s
1
10 s
100 s
dc
T
= 25_C
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
A
- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
www.vishay.com
4
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