SUD50N024-09P [VISHAY]
N-Channel 22-V (D-S) 175C MOSFET; N通道22 -V （D -S ） 175C MOSFET
| 型号： | SUD50N024-09P |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 22-V (D-S) 175C MOSFET |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N024-09P
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
VDS (V)
rDS(on) (W)
ID (A)d
0.0095 @ V = 10 V
49
36
GS
c
24
APPLICATIONS
0.017 @ V = 4.5 V
GS
D High-Side Synchronous Buck DC/DC
D
Conversion
− Desktop
− Server
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD50N024-09P
SUD50N024-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
C
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
V
24
DS(pulse)
V
DS
22
V
V
GS
"20
49d
T
= 25_C
C
a
Continuous Drain Current
I
D
d
T = 100_C
C
34
Pulsed Drain Current
I
100
4.3
29
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
I
S
L = 0.1 mH
I
AS
Avalanche Energy, Single Pulse
E
AS
42
mJ
a
T
= 25_C
= 25_C
6.5
A
Maximum Power Dissipation
P
D
W
T
39.5
C
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
19
40
23
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
3.1
3.8
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: T = 105_C, 50 ns, 300 kHz operation
A
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
1
SUD50N024-09P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
22
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
0.8
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 20 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 20 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.008
0.0095
0.014
0.017
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
0.0135
GS
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
1300
470
275
4.0
10.5
4.2
4.0
8
iss
V
= 0 V, V = 10 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
GS
oss
C
rss
R
1.6
6
g
c
Total Gate Charge
Q
16
g
c
Gate-Source Charge
Q
Q
V
= 10 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
12
15
40
20
d(on)
c
Rise Time
t
10
r
V
= 10 V, R = 0.2 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
25
d(off)
c
Fall Time
t
12
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
80
60
40
20
0
V
GS
= 10 thru 6 V
T
= −55_C
C
5 V
4 V
80
60
40
20
0
25_C
125_C
3 V
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
2
SUD50N024-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
60
0.030
0.025
0.020
0.015
0.010
0.005
0.000
T
= −55_C
C
50
40
30
20
10
0
25_C
V
GS
= 4.5 V
125_C
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
2000
1600
1200
800
400
0
10
8
V
D
= 10 V
DS
I
= 50 A
C
iss
6
4
C
oss
2
C
rss
0
0
4
8
12
16
20
0
4
8
12
Q − Total Gate Charge (nC)
g
16
20
V
− Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
GS
= 10 V
I
D
= 30 A
T = 150_C
J
T = 25_C
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
J
SD
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
3
SUD50N024-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
25
20
15
10
5
Limited
by r
DS(on)
10, 100 ms
100
10
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
1
T
= 25_C
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
4
相关型号：
SUD50N03-07-T4
Power Field-Effect Transistor, 20A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
VISHAY
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