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SI4946EY-T1 [VISHAY]

Dual N-Channel 60-V (D-S), 175C MOSFET; 双N通道60 -V （D -S ） ， 175 2 C MOSFET
SI4946EY-T1
型号： SI4946EY-T1
厂家： VISHAY    VISHAY
描述：

Dual N-Channel 60-V (D-S), 175C MOSFET
双N通道60 -V （D -S ） ， 175 2 C MOSFET

晶体 晶体管 功率场效应晶体管
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Si4946EY  
Vishay Siliconix  
Dual N-Channel 60-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.055 @ V = 10 V  
4.5  
3.9  
GS  
60  
0.075 @ V = 4.5 V  
GS  
D
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
Top View  
Ordering Information: Si4946EY  
Si4946EY-T1 (with Tape and Reel)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
60  
"20  
4.5  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
3.8  
A
Pulsed Drain Current  
I
30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2
T
= 25_C  
= 70_C  
2.4  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.7  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70157  
S-03950—Rev. D, 26-May-03  
www.vishay.com  
2-1  
 
Si4946EY  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
2
nA  
GSS  
V
= 60 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 60 V, V = 0 V, T = 55_C  
25  
GS  
J
b
On-State Drain Current  
I
V
= 5 V, V = 10 V  
20  
A
D(on)  
DS  
GS  
V
= 10 V, I = 4.5 A  
0.045  
0.055  
13  
0.055  
0.075  
GS  
GS  
D
b
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 3.9 A  
D
b
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 4.5 A  
S
V
D
b
Diode Forward Voltage  
V
SD  
I
= 2 A, V = 0 V  
0.9  
1.2  
30  
S
GS  
Dynamica  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
19  
4
g
Q
Q
V
= 30 V, V = 10 V, I = 4.5 A  
nC  
gs  
gd  
DS  
GS  
D
3
R
g
1
3.6  
20  
20  
60  
20  
60  
W
t
13  
11  
36  
11  
35  
d(on)  
t
r
V
DD  
= 30 V, R = 30 W  
L
= 10 V, R = 6 W  
GEN G  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2 A, di/dt = 100 A/ms  
F
Notes  
a. For design aid only; not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
Document Number: 70157  
S-03950—Rev. D, 26-May-03  
www.vishay.com  
2-2  
Si4946EY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
30  
24  
18  
12  
6
T
= -55_C  
C
V
GS  
= 10 thru 5 V  
24  
18  
12  
6
25_C  
4 V  
150_C  
3 V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
0.150  
0.125  
0.100  
0.075  
0.050  
0.025  
0.000  
1400  
1200  
1000  
800  
600  
400  
200  
0
C
iss  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
6
12  
18  
24  
30  
0
12  
24  
36  
48  
60  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
V
= 30 V  
= 4.5 A  
V
GS  
= 10 V  
DS  
I
D
I = 4.5 A  
D
6
4
2
0
0
4
8
12  
16  
20  
-50 -25  
0
25  
50  
75 100 125 150 175  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Document Number: 70157  
S-03950—Rev. D, 26-May-03  
www.vishay.com  
2-3  
Si4946EY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
20  
10  
I
D
= 4.5 A  
T
= 175_C  
T
= 25_C  
J
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Single Pulse Power  
Threshold Voltage  
0.4  
0.2  
50  
40  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
I
D
= 250 µA  
30  
20  
10  
0
-50 -25  
0
25  
50  
75 100 125 150 175  
0.01  
0.1  
1
10  
30  
Time (sec)  
T
- Temperature (_C)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2
0.02  
2. Per Unit Base = R  
= 62.5_C/W  
thJA  
(t)  
3. T - T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
30  
Square Wave Pulse Duration (sec)  
Document Number: 70157  
S-03950—Rev. D, 26-May-03  
www.vishay.com  
2-4  

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