SI4946EY-T1-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | SI4946EY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总5页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4946EY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)
Pb-free
Available
0.055 @ V = 10 V
4.5
3.9
GS
60
0.075 @ V = 4.5 V
GS
SO-8
D
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
Top View
S
Ordering Information: Si4946EY
Si4946EY-T1 (with Tape and Reel)
Si4946EY—E3 (Lead (Pb)-Free)
Si4946EY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
60
"20
4.5
DS
GS
V
V
T
= 25_C
= 70_C
A
a
Continuous Drain Current (T = 175_C)
I
D
J
T
A
3.8
Pulsed Drain Current
I
30
A
DM
a
Continuous Source Current (Diode Conduction)
Single Avalanche Current
I
2
S
I
AS
12
L = 0.1 mH
Single Avalanche Energy
E
AS
7.2
mJ
T
= 25_C
= 70_C
2.4
A
a
Maximum Power Dissipation
P
D
W
T
A
1.7
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70157
S-50524—Rev. E, 28-Mar-05
www.vishay.com
1
Si4946EY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1
3
"100
2
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 60 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 60 V, V = 0 V, T = 55_C
V
25
GS
J
b
On-State Drain Current
I
= 5 V, V = 10 V
20
A
D(on)
DS
GS
V
= 10 V, I = 4.5 A
0.045
0.055
13
0.055
0.075
GS
GS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 3.9 A
D
b
Forward Transconductance
g
fs
V
DS
= 15 V, I = 4.5 A
S
V
D
b
Diode Forward Voltage
V
SD
I
= 2 A, V = 0 V
0.9
1.2
30
S
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
19
4
g
Q
Q
V
= 30 V, V = 10 V, I = 4.5 A
nC
gs
gd
DS
GS
D
3
R
g
1
3.6
20
20
60
20
60
W
t
13
11
36
11
35
d(on)
t
r
V
DD
= 30 V, R = 30 W
L
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
t
rr
I = 2 A, di/dt = 100 A/ms
F
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 70157
S-50524—Rev. E, 28-Mar-05
www.vishay.com
2
Si4946EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
T
= −55_C
C
V
GS
= 10 thru 5 V
24
18
12
6
25_C
4 V
150_C
3 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.150
0.125
0.100
0.075
0.050
0.025
0.000
1400
1200
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
6
12
18
24
30
0
12
24
36
48
60
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
D
= 30 V
V
GS
= 10 V
DS
I
= 4.5 A
I = 4.5 A
D
6
4
2
0
0
4
8
12
16
20
−50 −25
0
25
50
75 100 125 150 175
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Document Number: 70157
S-50524—Rev. E, 28-Mar-05
www.vishay.com
3
Si4946EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
20
10
I
D
= 4.5 A
T
= 175_C
T
= 25_C
J
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
0.4
0.2
50
40
−0.0
−0.2
−0.4
−0.6
−0.8
−1.0
I
D
= 250 µA
30
20
10
0
−50 −25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
30
Time (sec)
T
− Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 62.5_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70157.
Document Number: 70157
S-50524—Rev. E, 28-Mar-05
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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