TS4148CRZG [TSC]
200mW High Speed SMD Switching Diode; 200mW的高速贴片开关二极管
| 型号： | TS4148CRZG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 200mW High Speed SMD Switching Diode |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS4148C RZG
200mW High Speed SMD Switching Diode
Small Signal Diode
0603
A
B
Features
Designed for mounting on small surface.
Extremely thin/leadless package
High mounting capability,strong surage with stand,
high reliability.
C
D
Pb free version and RoHS compliant
Halogen Free
Mechanical Data
Unit (mm)
Unit (inch)
Min Max
Case :0603 standard package,molded plastic
Dimensions
Min
1.45
0.70
0.25
0.55
Max
Terminal: Gold plated,solderable
per MIL-STD-750, Method 2026 guaranteed
A
B
C
D
1.65 0.057 0.065
0.90 0.028 0.035
0.45 0.010 0.018
0.75 0.022 0.030
High temperature soldering guaranteed: 260°C/10s
Polarity:Indicated by cathode band
Weight : 0.004gram (approximately)
Ordering Information
Part No.
Packing
Package
0603
TS4148C RZG
5K / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
mW
V
Power Dissipation
PD
VRRM
IFRM
IO
200
75
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
200
100
mA
mA
Non-Repetitive Peak Forward Surge Current
at t<1s and Tj=25oC
at t≦8.3ms and Tj=25oC
Thermal Resistance (Junction to Ambient)
0.4
0.1
IFSM
A
RθJA
375
°C/W
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Electrical Characteristics
Type Number
Symbol
V(BR)
Min
Max
Units
Reverse Breakdown Voltage
I =
-
-
-
-
-
-
-
75
1.00
1.25
0.025
5.0
V
V
V
100μA
10mA
100mA
20V
R
I =
F
Forward Voltage
VF
I =
F
V =
R
Reverse Leakage Current
IR
μA
V =
R
75V
VR=0V,
f=1.0MHz
CJ
4
pF
ns
Junction Capacitance
Reverse Recovery Time IF=IR=10mA, RL=100Ω
Trr
4.0
Version : A11
TS4148C RZG
200mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Typical Reverse Characteristics
1000
100
10
100
Tj=25oC
10
1
Tj=25oC
1
0.1
0.1
0.01
0.01
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
0
20
40
60
80
100
120
Inataneous Forward Voltage (V)
Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
FIG 4 Typical Junction Capacitance
300
250
200
150
100
50
5
4
3
2
1
0
0
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
Reverse Voltage (V)
Ambient Temperature (°C)
Version : A11
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