TS4148RYG [TSC]

400mW High Speed SMD Switching Diode; 400mW的高速贴片开关二极管
TS4148RYG
型号: TS4148RYG
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

400mW High Speed SMD Switching Diode
400mW的高速贴片开关二极管

二极管 开关 光电二极管
文件: 总2页 (文件大小:68K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TS4148 RYG  
400mW High Speed SMD Switching Diode  
Small Signal Diode  
0805  
A
B
Features  
—Designed for mounting on small surface.  
—Extremely thin/leadless package  
—High mounting capability,strong surage with stand,  
high reliability.  
—Pb free version and RoHS compliant  
—Halogen free  
C
D
Unit (mm)  
Min Max  
Unit (inch)  
Min Max  
Mechanical Data  
Dimensions  
—Case :0805 standard package, molded plastic  
A
B
C
D
1.80 2.20 0.071 0.086  
1.05 1.45 0.041 0.057  
0.25 0.65 0.010 0.026  
0.75 0.95 0.030 0.037  
—Terminal: Gold plated, solderable  
per MIL-STD-750, method 2026 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 0.006 gram (approximately)  
Ordering Information  
Part No.  
Packing  
Package  
0805  
TS4148 RYG  
5Kpcs / 7" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
VRSM  
VRRM  
IFRM  
Value  
400  
100  
75  
300  
150  
Units  
mW  
V
V
mA  
mA  
Power Dissipation  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
IO  
Non-Repetitive Peak Forward Surge Current  
Tp=1sec square waveform  
IFSM  
0.5  
2.0  
375  
A
8.3ms single half sine waveform  
Thermal Resistance (Junction to Ambient) (Note 1)  
Junction and Storage Temperature Range  
RșJA  
°C/W  
°C  
TJ, TSTG  
-65 to + 175  
Electrical Characteristics  
Type Number  
Symbol  
V(BR)  
Min  
Max  
75  
1.00  
25  
5
4.0  
4
Units  
V
V
nA  
ȝA  
pF  
ns  
-
-
-
-
Reverse Breakdown Voltage  
Forward Voltage  
(Note 2)  
10mA  
20V  
VF  
IF=  
VR=  
VR=  
Reverse Leakage Current  
IR  
75V  
CJ  
Trr  
Junction Capacitance  
Reverse Recovery Time  
VR=0, f=1.0MHz  
(Note3)  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Notes:2. Test Condition : IR=100ȝA  
Notes:3. Test Condition : IF=10mA, IR=1mA,RL=100ȍ  
Version : G11  
TS4148 RYG  
400mW High Speed SMD Switching Diode  
Small Signal Diode  
Rating and Sharacteristic Curves  
FIG 1 Typical Forward Characteristics  
FIG 2 Reverse Current vs Reverse Voltage  
100  
1000  
100  
10  
1
Ta=25°C  
Ta=25°C  
10  
Ta=100°  
1
0.1  
0.01  
0.1  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
120  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
FIG 3 Admissible Power Dissipation Curve  
FIG 4 Typical Junction Capacitance  
500  
400  
300  
200  
100  
0
1.2  
1.1  
1
0.9  
0.8  
0.7  
0.6  
0
25  
50  
75  
100  
125  
150  
175  
200  
0
2
4
6
8
10  
Reverse Voltage (V)  
Ambient Temperature (°C)  
FIG 5 Forward Resistance vs. Forward Current  
10000  
1000  
100  
10  
1
0
0
1
10  
100  
Forward Current (mA)  
Version : G11  

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