TS419 [STMICROELECTRONICS]
360mW MONO AMPLIFIER WITH STANDBY MODE; 360MW单声道放大器，待机模式
| 型号： | TS419 |
| 厂家： | 
ST |
| 描述： | 360mW MONO AMPLIFIER WITH STANDBY MODE |
| 文件： | 总32页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS419
TS421
360mW MONO AMPLIFIER WITH STANDBY MODE
■ OPERATING FROM Vcc=2V to 5.5V
PIN CONNECTIONS (top view)
■ STANDBY MODE ACTIVE HIGH (TS419) or
LOW (TS421)
TS419IDT: SO8
■ OUTPUT POWER into 16Ω: 367mW @ 5V
with 10% THD+N max or 295mW @5V and
110mW @3.3V with 1% THD+N max.
■LOW CURRENT CONSUMPTION: 2.5mA max
■ High Signal-to-Noise ratio: 95dB(A) at 5V
■ PSRR: 56dB typ. at 1kHz, 46dB at 217Hz
■ SHORT CIRCUIT LIMITATION
TS419IST, TS419-xIST: MiniSO8
8
7
6
5
1
2
3
4
Standby
Bypass
V
OUT2
GND
■ON/OFF click reduction circuitry
VIN
+
V
CC
OUT1
■ Available in SO8, MiniSO8 & DFN 3x3
VIN-
V
DESCRIPTION
The TS419/TS421 is a monaural audio power am-
plifier driving in BTL mode a 16 or 32Ω earpiece or
receiver speaker. The main advantage of this con-
figuration is to get rid of bulky ouput capacitors.
Capable of descending to low voltages, it delivers
up to 220mW per channel (into 16Ω loads) of con-
tinuous average power with 0.2% THD+N in the
audio bandwidth from a 5V power supply.
TS419IQT, TS419-xIQT: DFN8
1
2
3
4
GND
8
7
6
5
Vcc
VOUT 2
VOUT 1
VIN-
STANDBY
BYPASS
VIN+
An externally controlled standby mode reduces
the supply current to 10nA (typ.). The TS419/
TS421 can be configured by external gain-setting
resistors or used in a fixed gain version.
TS421IDT: SO8
TS421IST, TS421-xIST: MiniSO8
APPLICATIONS
■16/32 ohms earpiece or receiver speaker driver
■ Mobile and cordless phones (analog / digital)
■ PDAs & computers
■ Portable appliances
ORDER CODE
Temp.
Package
Part
Number
Range:
Gain Marking
D
S
Q
I
TS421IQT, TS421-xIQT: DFN8
TS419
•
•
external TS419I
external TS421I
external K19A
TS421
TS419
•
•
1
2
3
4
GND
8
7
6
5
Vcc
TS419-2
TS419-4
TS419-8
TS421
tba tba x2/6dB
K19B
VOUT 2
VOUT 1
VIN-
tba tba x4/12dB K19C
tba tba x8/18dB K19D
STANDBY
BYPASS
-40, +85°C
VIN+
•
•
external K21A
TS421-2
TS421-4
TS421-8
tba tba x2/6dB K21B
tba tba x4/12dB K21C
tba tba x8/18dB K21D
MiniSO & DFN only available in Tape & Reel with T suffix.
SO is available in Tube (D) and in Tape & Reel (DT)
June 2003
1/32
TS419-TS421
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
1)
V
6
V
V
Supply voltage
CC
V
-0.3V to VCC +0.3V
-65 to +150
150
Input Voltage
i
T
Storage Temperature
°C
°C
stg
T
Maximum Junction Temperature
j
Thermal Resistance Junction to Ambient
R
°C/W
thja
SO8
MiniSO8
DFN8
175
215
70
2)
Power Dissipation
0.71
0.58
1.79
SO8
MiniSO8
DFN8
Pd
W
3)
ESD
ESD
1.5
100
200
250
kV
V
Human Body Model (pin to pin): TS419 , TS421
Machine Model - 220pF - 240pF (pin to pin)
Latch-up Latch-up Immunity (All pins)
Lead Temperature (soldering, 10sec)
Output Short-Circuit to Vcc or GND
mA
°C
4)
continous
1. All voltage values are measured with respect to the ground pin.
2. Pd has been calculated with Tamb = 25°C, Tjunction = 150°C.
3. TS419 stands 1.5KV on all pins except standby pin which stands 1KV.
4. Attention must be paid to continous power dissipation (V x 300mA). Exposure of the IC to a short circuit for an extended time period is
DD
dramatically reducing product life expectancy.
OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V
Supply Voltage
Load Resistor
2 to 5.5
≥ 16
V
Ω
CC
R
L
T
Operating Free Air Temperature Range
-40 to + 85
°C
oper
Load Capacitor
R = 16 to 100Ω
C
400
100
pF
V
L
L
R > 100Ω
L
V
GND to V -1V
Common Mode Input Voltage Range
ICM
CC
Standby Voltage Input
1.5 ≤ V
≤ V
V
STB
CC
1)
TS421 ACTIVE / TS419 in STANDBY
TS421 in STANDBY / TS419 ACTIVE
V
STB
GND ≤ V
≤ 0.4
STB
Thermal Resistance Junction to Ambient
SO8
MiniSO8
150
190
41
R
°C/W
s
THJA
2)
DFN8
3)
T
≥ 0.12
wu
Wake-up time from standby to active mode (Cb = 1µF)
1. The minimum current consumption (I
) is guaranteed at VCC (TS419) or GND (TS421) for the whole temperature range.
STANDBY
2. When mounted on a 4-layer PCB
3. For more details on T , please refer to application note section on Wake-up time page 28.
WU
2/32
TS419-TS421
FIXED GAIN VERSION SPECIFIC ELECTRICAL CHARACTERISTICS
CC from +5V to +2V, GND = 0V, Tamb = 25°C (unless otherwise specified)
V
Symbol
Parameter
Min.
Typ.
Max.
Unit
R
Input Resistance
20
kΩ
IN
Gain value for Gain TS419/TS421-2
Gain value for Gain TS419/TS421-4
Gain value for Gain TS419/TS421-8
6dB
12dB
18dB
G
dB
APPLICATION COMPONENTS INFORMATION
Components
Functional Description
Inverting input resistor which sets the closed loop gain in conjunction with R
. This resistor also
FEED
R
C
IN
IN
forms a high pass filter with C (fcl = 1 / (2 x Pi x R x C )). Not needed in fixed gain versions.
IN
IN
IN
Input coupling capacitor which blocks the DC voltage at the amplifier’s input terminal
Feedback resistor which sets the closed loop gain in conjunction with R .
IN
R
FEED
A = Closed Loop Gain= 2xR
/R . Not needed in fixed gain versions.
FEED IN
V
C
Supply Bypass capacitor which provides power supply filtering.
Bypass capacitor which provides half supply filtering.
S
C
B
TYPICAL APPLICATION SCHEMATICS:
3/32
TS419-TS421
ELECTRICAL CHARACTERISTICS
VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
1.8
10
Max.
2.5
Unit
mA
nA
Supply Current
No input signal, no load
I
CC
Standby Current
No input signal, V
=GND for TS421
=Vcc for TS419
I
1000
STANDBY
STANDBY
STANDBY
No input signal, V
Output Offset Voltage
Voo
5
25
mV
No input signal, RL = 16 or 32Ω, Rfeed=20kΩ
Output Power
THD+N = 0.1% Max, F = 1kHz, R = 32Ω
L
190
207
258
270
295
367
THD+N = 1% Max, F = 1kHz, R = 32Ω
L
166
240
THD+N = 10% Max, F = 1kHz, R = 32Ω
P
mW
L
O
THD+N = 0.1% Max, F = 1kHz, R = 16Ω
L
THD+N = 1% Max, F = 1kHz, R = 16Ω
L
THD+N = 10% Max, F = 1kHz, R = 16Ω
L
Total Harmonic Distortion + Noise (A =2)
v
R = 32Ω, P = 150mW, 20Hz ≤ F ≤ 20kHz
THD + N
0.15
0.2
%
L
out
R = 16Ω, P = 220mW, 20Hz ≤ F ≤ 20kHz
L
out
1)
Power Supply Rejection Ratio (A =2)
v
PSRR
50
85
56
98
dB
dB
F = 1kHz, Vripple = 200mVpp, input grounded, Cb=1µF
1)
Signal-to-Noise Ratio (Filter Type A, A =2)
v
SNR
(R = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz)
L
Phase Margin at Unity Gain
Φ
58
18
Degrees
dB
M
R = 16Ω, C = 400pF
L
L
Gain Margin
GM
GBP
SR
R = 16Ω, C = 400pF
L
L
Gain Bandwidth Product
R = 16Ω
1.1
0.4
MHz
L
Slew Rate
R = 16Ω
V/µS
L
1. Guaranteed by design and evaluation.
4/32
TS419-TS421
ELECTRICAL CHARACTERISTICS
CC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) 1)
V
Symbol
Parameter
Min.
Typ.
1.8
10
Max.
2.5
Unit
mA
nA
Supply Current
No input signal, no load
I
CC
Standby Current
No input signal, V
=GND for TS421
=Vcc for TS419
I
1000
STANDBY
STANDBY
STANDBY
No input signal, V
Output Offset Voltage
Voo
5
25
mV
No input signal, RL = 16 or 32Ω, Rfeed=20kΩ
Output Power
THD+N = 0.1% Max, F = 1kHz, R = 32Ω
L
75
81
102
104
113
143
THD+N = 1% Max, F = 1kHz, R = 32Ω
L
65
91
THD+N = 10% Max, F = 1kHz, R = 32Ω
P
mW
L
O
THD+N = 0.1% Max, F = 1kHz, R = 16Ω
L
THD+N = 1% Max, F = 1kHz, R = 16Ω
L
THD+N = 10% Max, F = 1kHz, R = 16Ω
L
Total Harmonic Distortion + Noise (A =2)
v
R = 32Ω, P = 50mW, 20Hz ≤ F ≤ 20kHz
THD + N
0.15
0.2
%
L
out
R = 16Ω, P = 70mW, 20Hz ≤ F ≤ 20kHz
L
out
Power Supply Rejection Ratio
PSRR
50
82
56
94
dB
dB
inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF
Signal-to-Noise Ratio (Weighted A, A =2)
v
SNR
(R = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz)
L
Phase Margin at Unity Gain
Φ
58
Degrees
dB
M
R = 16Ω, C = 400pF
L
L
Gain Margin
GM
GBP
SR
18
R = 16Ω, C = 400pF
L
L
Gain Bandwidth Product
R = 16Ω
1.1
0.4
MHz
V/µS
L
Slew Rate
R = 16Ω
L
1.
All electrical values are guaranted with correlation measurements at 2V and 5V
5/32
TS419-TS421
ELECTRICAL CHARACTERISTICS
V
CC = +2.5V, GND = 0V, Tamb = 25°C (unless otherwise specified)1)
Symbol
Parameter
Min.
Typ.
1.7
10
Max.
2.5
Unit
mA
nA
Supply Current
No input signal, no load
I
CC
Standby Current
No input signal, V
=GND for TS421
=Vcc for TS419
I
1000
STANDBY
STANDBY
STANDBY
No input signal, V
Output Offset Voltage
Voo
5
25
mV
No input signal, RL = 16 or 32Ω, Rfeed=20kΩ
Output Power
THD+N = 0.1% Max, F = 1kHz, R = 32Ω
L
37
41
52
50
55
70
THD+N = 1% Max, F = 1kHz, R = 32Ω
L
32
44
THD+N = 10% Max, F = 1kHz, R = 32Ω
P
mW
L
O
THD+N = 0.1% Max, F = 1kHz, R = 16Ω
L
THD+N = 1% Max, F = 1kHz, R = 16Ω
L
THD+N = 10% Max, F = 1kHz, R = 16Ω
L
Total Harmonic Distortion + Noise (A =2)
v
R = 32Ω, P = 30mW, 20Hz ≤ F ≤ 20kHz
THD + N
0.15
0.2
%
L
out
R = 16Ω, P = 40mW, 20Hz ≤ F ≤ 20kHz
L
out
Power Supply Rejection Ratio (A =2)
v
PSRR
50
80
56
91
dB
dB
inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF
Signal-to-Noise Ratio (Weighted A, A =2)
v
SNR
(R = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz)
L
Phase Margin at Unity Gain
Φ
58
Degrees
dB
M
R = 16Ω, C = 400pF
L
L
Gain Margin
GM
GBP
SR
18
R = 16Ω, C = 400pF
L
L
Gain Bandwidth Product
R = 16Ω
1.1
0.4
MHz
V/µS
L
Slew Rate
R = 16Ω
L
1.
All electrical values are guaranted with correlation measurements at 2V and 5V
6/32
TS419-TS421
ELECTRICAL CHARACTERISTICS
VCC = +2V, GND = 0V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
1.7
10
Max.
2.5
Unit
mA
nA
Supply Current
No input signal, no load
I
CC
Standby Current
No input signal, V
=GND for TS421
=Vcc for TS419
I
1000
STANDBY
STANDBY
STANDBY
No input signal, V
Output Offset Voltage
Voo
5
25
mV
No input signal, RL = 16 or 32Ω, Rfeed=20kΩ
Output Power
THD+N = 0.1% Max, F = 1kHz, R = 32Ω
L
20
23
30
26
30
40
THD+N = 1% Max, F = 1kHz, R = 32Ω
L
19
24
THD+N = 10% Max, F = 1kHz, R = 32Ω
P
mW
L
O
THD+N = 0.1% Max, F = 1kHz, R = 16Ω
L
THD+N = 1% Max, F = 1kHz, R = 16Ω
L
THD+N = 10% Max, F = 1kHz, R = 16Ω
L
Total Harmonic Distortion + Noise (A =2)
v
R = 32Ω, P = 13mW, 20Hz ≤ F ≤ 20kHz
THD + N
0.1
%
L
out
0.15
R = 16Ω, P = 20mW, 20Hz ≤ F ≤ 20kHz
L
out
1)
Power Supply Rejection Ratio (A =2)
v
PSRR
49
80
54
89
dB
dB
inputs grounded, F = 1kHz, Vripple = 200mVpp, Cb=1µF
1)
Signal-to-Noise Ratio (Weighted A, A =2)
v
SNR
(R = 32Ω, THD +N < 0.5%, 20Hz ≤ F ≤ 20kHz)
L
Phase Margin at Unity Gain
Φ
58
20
Degrees
dB
M
R = 16Ω, C = 400pF
L
L
Gain Margin
GM
GBP
SR
R = 16Ω, C = 400pF
L
L
Gain Bandwidth Product
R = 16Ω
1.1
0.4
MHz
L
Slew Rate
R = 16Ω
V/µS
L
1. Guaranteed by design and evaluation.
7/32
TS419-TS421
Index of Graphs
Description
Figure
Page
Common Curves
Open Loop Gain and Phase vs Frequency
Current Consumption vs Power Supply Voltage
Current Consumption vs Standby Voltage
Output Power vs Power Supply Voltage
Output Power vs Load Resistor
Power Dissipation vs Output Power
Power Derating vs Ambiant Temperature
Output Voltage Swing vs Supply Voltage
Low Frequency Cut Off vs Input Capacitor
Curves With 6dB Gain Setting (Av=2)
THD + N vs Output Power
1 to 12
13
9 to 10
11
14 to 19
20 to 23
24 to 27
28 to 31
32
11 to 12
12
12 to 13
13 to 14
14
33
14
34
14
35 to 43
44 to 46
47 to 48
49 to 50
51 to 55
15 to 16
16
THD + N vs Frequency
Signal to Noise Ratio vs Power Supply Voltage
Noise Floor
17
17
PSRR vs Frequency
17 to 18
Curves With 12dB Gain Setting (Av=4)
THD + N vs Output Power
56 to 64
65 to 67
68 to 69
70 to 71
72 to 76
19 to 20
20
THD + N vs Frequency
Signal to Noise Ratio vs Power Supply Voltage
Noise Floor
21
21
PSRR vs Frequency
21 to 22
Curves With 18dB Gain Setting (Av=8)
THD + N vs Output Power
77 to 85
86 to 88
89 to 90
91 to 92
93 to 97
23 to 24
24
THD + N vs Frequency
Signal to Noise Ratio vs Power Supply Voltage
Noise Floor
25
25
PSRR vs Frequency
25 to 26
Note : All measurements made with Rin=20kΩ, Cb=1µF, and Cin=10µF unless otherwise specified.
8/32
TS419-TS421
Fig. 1: Open Loop Gain and Phase vs
Frequency
Fig. 2: Open Loop Gain and Phase vs
Frequency
180
160
140
120
100
80
180
160
140
120
100
80
Vcc = 5V
RL = 8
Tamb = 25
Vcc = 2V
RL = 8
Tamb = 25°C
80
60
40
20
0
80
60
40
Ω
Ω
Gain
Gain
°C
Phase
Phase
20
0
60
60
40
40
20
20
-20
-40
-20
-40
0
0
-20
10000
-20
10000
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
Fig. 3: Open Loop Gain and Phase vs
Frequency
Fig. 4: Open Loop Gain and Phase vs
Frequency
180
160
140
120
100
80
180
160
140
120
100
80
Vcc = 2V
ZL = 8 +400pF
Tamb = 25
Vcc = 5V
ZL = 8 +400pF
Tamb = 25
80
60
40
20
0
80
Ω
Ω
Gain
Gain
°C
°C
60
40
20
0
Phase
Phase
60
60
40
40
20
20
-20
-40
-20
-40
0
0
-20
10000
-20
10000
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
Fig. 5: Open Loop Gain and Phase vs
Frequency
Fig. 6: Open Loop Gain and Phase vs
Frequency
180
160
140
120
100
80
180
160
140
120
100
80
Vcc = 5V
Vcc = 2V
RL = 16Ω
Tamb = 25°C
80
60
40
20
0
80
60
40
20
0
RL = 16
Ω
Gain
Gain
Tamb = 25
°C
Phase
Phase
60
60
40
40
20
20
-20
-40
-20
-40
0
0
-20
10000
-20
10000
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
9/32
TS419-TS421
Fig. 7: Open Loop Gain and Phase vs
Frequency
Fig. 8: Open Loop Gain and Phase vs
Frequency
180
160
140
120
100
80
180
160
140
120
100
80
Vcc = 5V
Vcc = 2V
ZL = 16Ω+400pF
Tamb = 25°C
80
60
40
20
0
80
60
40
20
0
ZL = 16
Ω
+400pF
Gain
Gain
Tamb = 25
°C
Phase
Phase
60
60
40
40
20
20
-20
-40
-20
-40
0
0
-20
10000
-20
10000
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
Fig. 9: Open Loop Gain and Phase vs
Frequency
Fig. 10: Open Loop Gain and Phase vs
Frequency
180
160
140
120
100
80
180
160
140
120
100
80
Vcc = 5V
Vcc = 2V
RL = 32Ω
Tamb = 25°C
80
60
40
20
0
80
60
40
20
0
RL = 32
Ω
Gain
Gain
Tamb = 25
°C
Phase
Phase
60
60
40
40
20
20
-20
-40
-20
-40
0
0
-20
10000
-20
10000
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
Fig. 11: Open Loop Gain and Phase vs
Frequency
Fig. 12: Open Loop Gain and Phase vs
Frequency
180
160
140
120
100
80
180
160
140
120
100
80
Vcc = 5V
Vcc = 2V
ZL = 32Ω+400pF
Tamb = 25°C
80
60
40
20
0
80
60
40
20
0
ZL = 32
Ω
+400pF
Gain
Gain
Tamb = 25
°C
Phase
Phase
60
60
40
40
20
20
-20
-40
-20
-40
0
0
-20
10000
-20
10000
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (kHz)
Frequency (kHz)
10/32
TS419-TS421
Fig. 13: Current Consumption vs Power Supply
Voltage
Fig. 14: Current Consumption vs Standby
Voltage
2.0
2.0
1.5
1.0
0.5
0.0
No load
Ta=85°C
1.5
Ta=85°C
Ta=25°C
Ta=-40°C
Ta=25°C
Ta=-40°C
1.0
0.5
0.0
TS419
Vcc = 5V
No load
0
1
2
3
4
5
0
1
2
3
4
5
Power Supply Voltage (V)
Standby Voltage (V)
Fig. 15: Current Consumption vs Standby
Voltage
Fig. 16: Current Consumption vs Standby
Voltage
2.0
1.5
2.0
Ta=85°C
1.5
Ta=85°C
Ta=25°C
Ta=25°C
1.0
0.5
0.0
1.0
Ta=-40°C
Ta=-40°C
0.5
TS419
Vcc = 3.3V
No load
TS419
Vcc = 2V
No load
0.0
0
1
2
3
0
1
2
Standby Voltage (V)
Standby Voltage (V)
Fig. 17: Current Consumption vs Standby
Voltage
Fig. 18: Current Consumption vs Standby
Voltage
2.5
2.0
Ta=85°C
Ta=25°C
Ta=25°C
2.0
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
Ta=85°C
Ta=-40°C
Ta=-40°C
TS421
Vcc = 5V
No load
TS421
Vcc = 3.3V
No load
0
1
2
3
4
5
0
1
2
3
Standby Voltage (V)
Standby Voltage (V)
11/32
TS419-TS421
Fig. 19: Current Consumption vs Standby
Voltage
Fig. 20: Output Power vs Power Supply
Voltage
2.0
550
Ta=85°C
RL = 8
F = 1kHz
BW < 125kHz
Tamb = 25°C
Ω
500
450
400
350
300
250
200
150
100
50
THD+N=1%
1.5
Ta=25°C
THD+N=10%
1.0
Ta=-40°C
0.5
TS421
Vcc = 2V
No load
THD+N=0.1%
0.0
0
2.0
0
1
2
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Vcc (V)
Standby Voltage (V)
Fig. 21: Output Power vs Power Supply
Voltage
Fig. 22: Output Power vs Power Supply
Voltage
500
RL = 32
F = 1kHz
BW < 125kHz
Tamb = 25°C
Ω
300
250
200
150
100
50
RL = 16
F = 1kHz
BW < 125kHz
Tamb = 25°C
Ω
450
400
350
300
250
200
150
100
50
THD+N=1%
THD+N=1%
THD+N=10%
THD+N=10%
THD+N=0.1%
THD+N=0.1%
0
2.0
0
2.0
2.5
3.0
3.5
Vcc (V)
4.0
4.5
5.0
5.5
2.5
3.0
3.5
Vcc (V)
4.0
4.5
5.0
5.5
Fig. 23: Output Power vs Power Supply
Voltage
Fig. 24: Output Power vs Load Resistor
500
200
Vcc = 5V
F = 1kHz
BW < 125kHz
Tamb = 25
RL = 64
F = 1kHz
BW < 125kHz
Tamb = 25°C
Ω
450
THD+N=10%
THD+N=1%
400
350
300
250
200
150
100
50
150
100
50
°C
THD+N=1%
THD+N=10%
THD+N=0.1%
THD+N=0.1%
0
0
2.0
8
16
24
32
40
48
56
64
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Load Resistance (
)
Vcc (V)
12/32
TS419-TS421
Fig. 25: Output Power vs Load Resistor
Fig. 26: Output Power vs Load Resistor
100
90
80
70
60
50
40
30
20
10
0
200
Vcc = 2.5V
F = 1kHz
BW < 125kHz
Vcc = 3.3V
F = 1kHz
THD+N=10%
THD+N=1%
BW < 125kHz
Tamb = 25
150
Tamb = 25°C
°
C
THD+N=1%
THD+N=10%
100
50
0
THD+N=0.1%
THD+N=0.1%
8
16
24
32
40
48
56
64
8
16
24
32
40
48
56
64
Load Resistance (
)
Load Resistance ( )
Fig. 27: Output Power vs Load Resistor
Fig. 28: Power Dissipation vs Output Power
600
50
Vcc=5V
F=1kHz
THD+N<1%
Vcc = 2V
F = 1kHz
BW < 125kHz
Tamb = 25
45
THD+N=10%
THD+N=1%
500
40
35
30
25
20
15
10
5
°C
RL=8Ω
400
300
RL=16Ω
200
THD+N=0.1%
100
RL=32Ω
0
0
0
50
100
150
200
250
300
350
8
16
24
32
40
48
56
64
Load Resistance (
)
Output Power (mW)
Fig. 29: Power Dissipation vs Output Power
Fig. 30: Power Dissipation vs Output Power
140
300
Vcc=3.3V
Vcc=2.5V
F=1kHz
THD+N<1%
F=1kHz
THD+N<1%
120
250
RL=8Ω
100
80
60
40
20
0
RL=8
Ω
200
150
100
50
RL=16
Ω
RL=16
Ω
RL=32
Ω
RL=32
30
Output Power (mW)
Ω
0
0
10
20
40
50
60
0
30
60
90
120
150
Output Power (mW)
13/32
TS419-TS421
Fig. 31: Power Dissipation vs Output Power
Fig. 32: Power Derating Curves
100
Vcc=2V
F=1kHz
THD+N<1%
80
60
40
20
0
RL=8Ω
RL=16
Ω
RL=32
Ω
0
5
10
15
20
25
30
35
Output Power (mW)
Fig. 33: Output Voltage Swing For One Amp. vs
Power Supply Voltage
Fig. 34: Low Frequency Cut Off vs Input
Capacitor for fixed gain versions
5.0
Tamb=25°C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Amps. in BTL
Ω
Ω
RL=8
Ω
RL=16
Ω
RL=32
Ω
Ω
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Power Supply Voltage (V)
14/32
TS419-TS421
Fig. 35: THD + N vs Output Power
Fig. 36: THD + N vs Output Power
10
10
1
RL = 16
Ω
RL = 8
F = 20Hz
Av = 2
Ω
F = 20Hz
Av = 2
1
0.1
Cb = 1
BW < 22kHz
Tamb = 25°C
µF
Cb = 1
BW < 22kHz
Tamb = 25
µF
Vcc=2V
Vcc=2V
°C
Vcc=2.5V
0.1
Vcc=2.5V
0.01
1E-3
0.01
1E-3
Vcc=3.3V
Vcc=3.3V
Vcc=5V
100
Vcc=5V
100
1
10
1
10
Output Power (mW)
Output Power (mW)
Fig. 37: THD + N vs Output Power
Fig. 38: THD + N vs Output Power
10
10
RL = 8
Ω
RL = 32
Ω
F = 1kHz
Av = 2
Cb = 1µF
BW < 125kHz
Tamb = 25
F = 20Hz
Av = 2
1
0.1
Cb = 1
BW < 22kHz
Tamb = 25
µF
1
0.1
Vcc=2V
°
C
°C
Vcc=2.5V
Vcc=2V
Vcc=2.5V
0.01
1E-3
0.01
Vcc=3.3V
Vcc=5V
100
Vcc=3.3V
10
Output Power (mW)
Vcc=5V
1
100
1
10
Output Power (mW)
Fig. 39: THD + N vs Output Power
Fig. 40: THD + N vs Output Power
10
10
RL = 32
Ω
RL = 16
Ω
F = 1kHz
Av = 2
F = 1kHz
Av = 2
1
0.1
Cb = 1
BW < 125kHz
Tamb = 25
µF
1
0.1
Cb = 1
BW < 125kHz
Tamb = 25
µF
Vcc=2V
°C
°C
Vcc=2V
Vcc=2.5V
Vcc=2.5V
0.01
1E-3
0.01
Vcc=5V
100
Vcc=3.3V
Vcc=3.3V
Vcc=5V
100
1
10
1
10
Output Power (mW)
Output Power (mW)
15/32
TS419-TS421
Fig. 41: THD + N vs Output Power
Fig. 42: THD + N vs Output Power
10
10
RL = 8
Ω
RL = 16Ω
F = 20kHz
Av = 2
F = 20kHz
Av = 2
Cb = 1
BW < 125kHz
Tamb = 25
µ
F
Cb = 1
BW < 125kHz
Tamb = 25
µF
Vcc=2V
°
C
Vcc=2V
°C
1
1
Vcc=2.5V
Vcc=2.5V
0.1
Vcc=5V
100
Vcc=3.3V
Vcc=5V
100
Vcc=3.3V
0.1
1
10
Output Power (mW)
1
10
Output Power (mW)
Fig. 43: THD + N vs Output Power
Fig. 44: THD + N vs Frequency
10
RL=8
Av=2
Cb = 1
Bw < 125kHz
Tamb = 25
Ω
RL = 32
F = 20kHz
Av = 2
Ω
µF
Vcc=2V, Po=28mW
Cb = 1
BW < 125kHz
Tamb = 25
µF
°C
0.1
Vcc=2V
°C
1
Vcc=2.5V
0.01
0.1
Vcc=5V, Po=300mW
Vcc=5V
100
Vcc=3.3V
20
100
1000
10000 20k
1
10
Frequency (Hz)
Output Power (mW)
Fig. 45: THD + N vs Frequency
Fig. 46: THD + N vs Frequency
RL=32Ω
Av=2
RL=16
Av=2
Ω
Cb = 1µF
Bw < 125kHz
Tamb=25°C
Cb = 1µF
Bw < 125kHz
Tamb = 25
0.1
°
C
Vcc=2V, Po=20mW
0.1
Vcc=5V, Po=220mW
Vcc=2V, Po=13mW
Vcc=5V, Po=150mW
0.01
0.01
20
100
1000
10000 20k
20
100
1000
10000 20k
Frequency (Hz)
Frequency (Hz)
16/32
TS419-TS421
Fig. 47: Signal to Noise Ratio vs Power Supply
VoltagewithUnweightedFilter(20Hzto20kHz)
Fig. 48: Signal to Noise Ratio vs Power Supply
Voltage with Weighted Filter Type A
100
105
Av = 2
Av = 2
Cb = 1
THD+N < 0.5%
Tamb = 25
µF
Cb = 1
THD+N < 0.5%
Tamb = 25°C
µF
95
90
85
80
75
70
100
95
90
85
80
RL=32
Ω
RL=32Ω
°C
RL=8
Ω
RL=8Ω
RL=16
Ω
RL=16Ω
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Power Supply Voltage (V)
Power Supply Voltage (V)
Fig. 49: Noise Floor
Fig. 50: Noise Floor
30
30
Standby=OFF
Standby=OFF
20
10
0
RL>=16
Vcc=5V
Av=2
Ω
20
10
0
RL>=16
Vcc=2V
Av=2
Ω
Cb = 1µF
Cb = 1µF
Input Grounded
Bw < 125kHz
Tamb=25
Input Grounded
Bw < 125kHz
Tamb=25°C
Standby=ON
Standby=ON
°
C
20
100
1000
Frequency (Hz)
10000 20k
20
100
1000
Frequency (Hz)
10000 20k
Fig. 51: PSRR vs Input Capacitor
Fig. 52: PSRR vs Power Supply Voltage
0
0
Vripple = 100mVrms
Rfeed = 20kΩ
Input = floating
Cb = 1µF
RL >= 16Ω
Tamb = 25°C
Vripple = 200mVpp
Av = 2, Vcc = 5V
Input = grounded
Cb = 1µF, Rin = 20kΩ
RL >= 16Ω
Tamb = 25°C
-10
-10
-20
-30
-40
-50
-60
-70
-20
-30
Cin = 1µF, 220nF
-40
Vcc = 2V
-50
-60
-70
Cin = 100nF
1000
Vcc = 5V, 3.3V & 2.5V
-80
100
1000
10000
Frequency (Hz)
100000
100
10000
Frequency (Hz)
100000
17/32
TS419-TS421
Fig. 53: PSRR vs Bypass Capacitor
Fig. 54: PSRR vs Bypass Capacitor
0
0
Vripple = 200mVpp
Av = 2
Vripple = 200mVpp
Av = 2
-10
-10
Input = Grounded
Cb = Cin = 1µF
RL >= 16Ω
Input = Grounded
Cb = 4.7µF
Cin = 1µF
RL >= 16Ω
-20
-30
-40
-50
-60
-70
-20
-30
Tamb = 25°C
Tamb = 25°C
Vcc = 2V
-40
-50
-60
-70
Vcc = 2V
Vcc = 5V, 3.3V & 2.5V
Vcc = 5V, 3.3V & 2.5V
100
1000
10000
100000
100
1000
10000
100000
Frequency (Hz)
Frequency (Hz)
Fig. 55: PSRR vs Bypass Capacitor
0
Vripple = 200mVpp
Av = 2
-10
Input = Grounded
Cb = 10µF
-20
Cin = 1µF
-30
-40
-50
-60
-70
RL >= 16Ω
Tamb = 25°C
Vcc = 2V
Vcc = 5V, 3.3V & 2.5V
100
1000
10000
100000
Frequency (Hz)
18/32
TS419-TS421
Fig. 56: THD + N vs Output Power
Fig. 57: THD + N vs Output Power
10
10
1
RL = 16
Ω
RL = 8
F = 20Hz
Av = 4
Ω
F = 20Hz
Av = 4
1
0.1
Cb = 1
BW < 22kHz
Tamb = 25
µF
Cb = 1
BW < 22kHz
Tamb = 25
µF
Vcc=2V
°C
°C
Vcc=2.5V
Vcc=2V
0.1
Vcc=2.5V
0.01
1E-3
0.01
Vcc=3.3V
Vcc=5V
100
Vcc=3.3V
Vcc=5V
100
1
10
1
10
Output Power (mW)
Output Power (mW)
Fig. 58: THD + N vs Output Power
Fig. 59: THD + N vs Output Power
10
10
RL = 8
Ω
RL = 32
Ω
F = 1kHz
Av = 4
Cb = 1µF
BW < 125kHz
Tamb = 25
F = 20Hz
Av = 4
1
0.1
Cb = 1
BW < 22kHz
Tamb = 25
µF
1
0.1
Vcc=2V
°
C
°C
Vcc=2.5V
Vcc=2V
Vcc=2.5V
0.01
1E-3
0.01
Vcc=3.3V
Vcc=5V
100
Vcc=3.3V
10
Output Power (mW)
Vcc=5V
1
100
1
10
Output Power (mW)
Fig. 60: THD + N vs Output Power
Fig. 61: THD + N vs Output Power
10
10
RL = 16
Ω
RL = 32
Ω
F = 1kHz
Av = 4
Cb = 1µF
BW < 125kHz
Tamb = 25
F = 1kHz
Av = 4
1
0.1
Cb = 1
BW < 125kHz
Tamb = 25
µF
1
0.1
Vcc=2V
Vcc=2.5V
Vcc=2V
°C
°C
Vcc=2.5V
0.01
1E-3
0.01
Vcc=5V
100
Vcc=3.3V
Vcc=3.3V
Vcc=5V
100
1
10
Output Power (mW)
1
10
Output Power (mW)
19/32
TS419-TS421
Fig. 62: THD + N vs Output Power
Fig. 63: THD + N vs Output Power
10
10
RL = 8
Ω
RL = 16
Ω
F = 20kHz
Av = 4
F = 20kHz
Av = 4
Cb = 1
BW < 125kHz
Tamb = 25
µF
Cb = 1
BW < 125kHz
Tamb = 25
µF
Vcc=2V
°C
°C
Vcc=2V
1
Vcc=2.5V
1
Vcc=2.5V
Vcc=5V
100
Vcc=5V
100
Vcc=3.3V
Vcc=3.3V
0.1
1
10
1
10
Output Power (mW)
Output Power (mW)
Fig. 64: THD + N vs Output Power
Fig. 65: THD + N vs Frequency
10
RL=8
Av=4
Cb = 1
Bw < 125kHz
Tamb = 25
Ω
RL = 32
F = 20kHz
Av = 4
Ω
µF
Vcc=2V, Po=28mW
Cb = 1
BW < 125kHz
Tamb = 25
µF
°C
Vcc=2V
0.1
°C
1
Vcc=2.5V
0.1
Vcc=5V, Po=300mW
Vcc=5V
100
0.01
Vcc=3.3V
20
100
1000
10000 20k
1
10
Frequency (Hz)
Output Power (mW)
Fig. 66: THD + N vs Frequency
Fig. 67: THD + N vs Frequency
RL=32
Ω
RL=16
Ω
Av=4
Av=4
Cb = 1µF
Bw < 125kHz
Tamb=25
Cb = 1µF
Bw < 125kHz
Tamb = 25°C
Vcc=2V, Po=20mW
0.1
°
C
0.1
Vcc=2V, Po=13mW
Vcc=5V, Po=150mW
0.01
0.01
Vcc=5V, Po=220mW
1000
20
100
10000 20k
20
100
1000
10000 20k
Frequency (Hz)
Frequency (Hz)
20/32
TS419-TS421
Fig. 68: Signal to Noise Ratio vs Power Supply
VoltagewithUnweightedFilter(20Hzto20kHz)
Fig. 69: Signal to Noise Ratio vs Power Supply
Voltage with Weighted Filter Type A
90
100
Av = 4
Av = 4
Cb = 1µF
Cb = 1µF
RL=32Ω
RL=32Ω
THD+N < 0.5%
Tamb = 25°C
THD+N < 0.5%
Tamb = 25°C
95
90
85
80
75
85
80
75
70
RL=8Ω
RL=8Ω
RL=16Ω
RL=16Ω
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Power Supply Voltage (V)
Power Supply Voltage (V)
Fig. 70: Noise Floor
Fig. 71: Noise Floor
40
40
Standby=OFF
Standby=OFF
30
20
10
0
RL>=16
Vcc=5V
Av=4
Ω
30
20
10
0
RL>=16
Vcc=2V
Av=4
Ω
Cb = 1µF
Cb = 1µF
Input Grounded
Bw < 125kHz
Tamb=25
Input Grounded
Bw < 125kHz
Tamb=25°C
°
C
Standby=ON
Standby=ON
20
100
1000
Frequency (Hz)
10000 20k
20
100
1000
Frequency (Hz)
10000 20k
Fig. 72: PSRR vs Power Supply Voltage
Fig. 73: PSRR vs Input Capacitor
0
0
Vripple = 100mVrms
Rfeed = 40kΩ
Input = floating
Cb = 1µF
RL >= 16Ω
Tamb = 25°C
Vripple = 200mVpp
Av = 4, Vcc = 5V
Input = grounded
Cb = 1µF, Rin = 20kΩ
RL >= 16Ω
Tamb = 25°C
-10
-10
-20
-30
-40
-50
-60
-20
Cin = 1µF, 220nF
-30
-40
Vcc = 2V
-50
-60
-70
Vcc = 5V, 3.3V & 2.5V
Cin = 100nF
1000
-80
100
1000
10000
Frequency (Hz)
100000
100
10000
Frequency (Hz)
100000
21/32
TS419-TS421
Fig. 74: PSRR vs Bypass Capacitor
Fig. 75: PSRR vs Bypass Capacitor
0
0
Vripple = 200mVpp
Av = 4
Input = Grounded
Cb = Cin = 1µF
RL >= 16Ω
Vripple = 200mVpp
Av = 4
Input = Grounded
-20 Cb = 4.7µF
Cin = 1µF
-10
-20
-30
-40
-50
-60
-10
Tamb = 25°C
RL >= 16Ω
Tamb = 25°C
-30
Vcc = 2V
Vcc = 2V
-40
-50
-60
Vcc = 5V, 3.3V & 2.5V
Vcc = 5V, 3.3V & 2.5V
100
1000
10000
100000
100
1000
10000
100000
Frequency (Hz)
Frequency (Hz)
Fig. 76: PSRR vs Bypass Capacitor
0
Vripple = 200mVpp
Av = 4
-10
Input = Grounded
-20
-30
-40
-50
-60
Cb = 10µF
Cin = 1µF
RL >= 16Ω
Tamb = 25°C
Vcc = 2V
Vcc = 5V, 3.3V & 2.5V
100
1000
10000
100000
Frequency (Hz)
22/32
TS419-TS421
Fig. 77: THD + N vs Output Power
Fig. 78: THD + N vs Output Power
10
10
1
RL = 16
F = 20Hz
Av = 8
Ω
RL = 8
F = 20Hz
Av = 8
Cb = 1µF
BW < 22kHz
Tamb = 25
Ω
Cb = 1
BW < 22kHz
Tamb = 25
µF
1
0.1
°C
Vcc=2V
°C
Vcc=2V
Vcc=2.5V
0.1
0.01
Vcc=2.5V
Vcc=3.3V
0.01
Vcc=3.3V
Vcc=5V
100
Vcc=5V
100
1
10
1
10
Output Power (mW)
Output Power (mW)
Fig. 79: THD + N vs Output Power
Fig. 80: THD + N vs Output Power
10
10
RL = 32
Ω
RL = 8Ω
F = 20Hz
Av = 8
F = 1kHz
Av = 8
Cb = 1
BW < 22kHz
Tamb = 25
µ
F
Cb = 1µF
BW < 125kHz
Tamb = 25
1
0.1
1
0.1
°
C
°C
Vcc=2V
Vcc=2V
Vcc=2.5V
Vcc=2.5V
Vcc=3.3V
Vcc=5V
100
Vcc=5V
Vcc=3.3V
10
0.01
0.01
1
10
1
100
Output Power (mW)
Output Power (mW)
Fig. 81: THD + N vs Output Power
Fig. 82: THD + N vs Output Power
10
10
RL = 32
Ω
RL = 16
Ω
F = 1kHz
Av = 8
Cb = 1µF
BW < 125kHz
Tamb = 25
F = 1kHz
Av = 8
Cb = 1µF
BW < 125kHz
Tamb = 25
1
0.1
1
0.1
Vcc=2V
Vcc=2.5V
Vcc=2V
°C
°C
Vcc=2.5V
0.01
Vcc=5V
100
Vcc=3.3V
Vcc=3.3V
Vcc=5V
100
0.01
1
10
1
10
Output Power (mW)
Output Power (mW)
23/32
TS419-TS421
Fig. 83: THD + N vs Output Power
Fig. 84: THD + N vs Output Power
10
10
RL = 8
Av = 8, Cb = 1
BW < 125kHz, Tamb = 25
Ω, F = 20kHz
RL = 16
F = 20kHz
Av = 8
Ω
µF
°C
Cb = 1
BW < 125kHz
Tamb = 25
µF
Vcc=2V
Vcc=2V
°
C
Vcc=2.5V
Vcc=2.5V
1
1
Vcc=3.3V
Vcc=5V
100
Vcc=5V
100
Vcc=3.3V
1
10
1
10
Output Power (mW)
Output Power (mW)
Fig. 85: THD + N vs Output Power
Fig. 86: THD + N vs Frequency
10
RL=8Ω
Av=8
Cb = 1µF
Bw < 125kHz
Tamb = 25°C
RL = 32
F = 20kHz
Av = 8
Ω
Vcc=2V, Po=28mW
Cb = 1
BW < 125kHz
Tamb = 25
µF
Vcc=2V
°C
0.1
1
Vcc=2.5V
Vcc=5V, Po=300mW
Vcc=5V
100
Vcc=3.3V
0.1
20
100
1000
Frequency (Hz)
10000 20k
1
10
Output Power (mW)
Fig. 87: THD + N vs Frequency
Fig. 88: THD + N vs Frequency
RL=32
Ω
RL=16
Ω
Av=8
Av=8
Cb = 1µF
Bw < 125kHz
Tamb=25
Cb = 1µF
Bw < 125kHz
Tamb = 25
Vcc=2V, Po=20mW
Vcc=2V, Po=13mW
°
C
°
C
0.1
0.1
Vcc=5V, Po=150mW
0.01
0.01
Vcc=5V, Po=220mW
1000 10000 20k
20
100
20
100
1000
10000 20k
Frequency (Hz)
Frequency (Hz)
24/32
TS419-TS421
Fig. 89: Signal to Noise Ratio vs Power Supply
VoltagewithUnweightedFilter(20Hzto20kHz)
Fig. 90: Signal to Noise Ratio vs Power Supply
Voltage with Weighted Filter Type A
90
95
Av = 8
Cb = 1µF
THD+N < 0.5%
Av = 8
Cb = 1µF
THD+N < 0.5%
85
80
75
70
65
60
RL=32Ω
RL=32Ω
90
85
80
75
70
Tamb = 25°C
Tamb = 25°C
RL=8Ω
RL=8Ω
RL=16Ω
RL=16Ω
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Power Supply Voltage (V)
Power Supply Voltage (V)
Fig. 91: Noise Floor
Fig. 92: Noise Floor
70
60
70
60
Standby=OFF
Standby=OFF
50
40
30
20
10
0
50
40
30
20
10
0
RL>=16
Vcc=5V
Av=8
Ω
RL>=16
Vcc=2V
Av=8
Ω
Cb = 1µF
Cb = 1µF
Input Grounded
Bw < 125kHz
Input Grounded
Bw < 125kHz
Tamb=25
°
C
Tamb=25°C
Standby=ON
Standby=ON
20
100
1000
Frequency (Hz)
10000 20k
20
100
1000
Frequency (Hz)
10000 20k
Fig. 93: PSRR vs Power Supply Voltage
Fig. 94: PSRR vs Input Capacitor
0
0
Vripple = 100mVrms
Rfeed = 80kΩ
Input = floating
Cb = 1µF
RL >= 16Ω
Tamb = 25°C
Vripple = 200mVpp
Av = 8, Vcc = 5V
Input = grounded
Cb = 1µF, Rin = 20kΩ
RL >= 16Ω
Tamb = 25°C
-10
-10
-20
-30
-40
-50
-20
Cin = 1µF, 220nF
-30
-40
Vcc = 2V
-50
-60
-70
Vcc = 5V, 3.3V & 2.5V
Cin = 100nF
1000
100
1000
10000
Frequency (Hz)
100000
100
10000
Frequency (Hz)
100000
25/32
TS419-TS421
Fig. 95: PSRR vs Bypass Capacitor
Fig. 96: PSRR vs Bypass Capacitor
0
0
Vripple = 200mVpp
Vripple = 200mVpp
Av = 8
Input = Grounded
Cb = Cin = 1µF
RL >= 16Ω
-10
-20
-30
-40
-50
-60
Av = 8
-10
Input = Grounded
Cb = 4.7µF
Cin = 1µF
RL >= 16Ω
Tamb = 25°C
-20
-30
-40
-50
Tamb = 25°C
Vcc = 2V
Vcc = 2V
Vcc = 5V, 3.3V & 2.5V
Vcc = 5V, 3.3V & 2.5V
100
1000
10000
100000
100
1000
10000
100000
Frequency (Hz)
Frequency (Hz)
Fig. 97: PSRR vs Bypass Capacitor
0
Vripple = 200mVpp
-10
-20
-30
-40
-50
-60
Av = 8
Input = Grounded
Cb = 10µF
Cin = 1µF
RL >= 16Ω
Tamb = 25°C
Vcc = 2V
Vcc = 5V, 3.3V & 2.5V
100
1000
10000
100000
Frequency (Hz)
26/32
TS419-TS421
APPLICATION INFORMATION
In the high frequency region, you can limit the
bandwidth by adding a capacitor (Cfeed) in
parallel with Rfeed. It forms a low-pass filter with a
-3dB cut off frequency .
■BTL Configuration Principle
The TS419 & TS420 are monolithic power
amplifiers with a BTL output type. BTL (Bridge
Tied Load) means that each end of the load is
connected to two single-ended output amplifiers.
Thus, we have:
1
FCH
=
(Hz)
2π Rfeed Cfeed
■ Power dissipation and efficiency
Hypothesis:
Single ended output 1 = Vout1 = Vout (V)
Single ended output 2 = Vout2 = -Vout (V)
• Load voltage and current are sinusoidal (Vout
and Iout)
• Supply voltage is a pure DC source (Vcc)
And Vout1 - Vout2 = 2Vout (V)
The output power is :
Regarding the load we have:
2
(2 VoutRMS
RL
)
Pout =
(W)
VOUT = VPEAK sinωt (V)
and
For the same power supply voltage, the output
power in BTL configuration is four times higher
than the output power in single ended
configuration.
VOUT
IOUT
=
(A)
RL
and
■ Gain In Typical Application Schematic
2
(cf. page 3 of TS419-TS421 datasheet)
VPEAK
2RL
POUT
=
(W)
In the flat region (no C effect), the output voltage
IN
of the first stage is:
Then, the average current delivered by the supply
voltage is:
Rfeed
Vout1= −Vin
(V)
Rin
VPEAK
IccAVG = 2
(A)
For the second stage : Vout2 = -Vout1 (V)
πRL
The differential output voltage is
Rfeed
The power delivered by the supply voltage is:
Psupply = Vcc Icc (W)
AVG
Vout2−Vout1= 2Vin
(V)
Rin
Then, the power dissipated by the amplifier is:
Pdiss = Psupply - Pout (W)
The differential gain named gain (Gv) for more
convenient usage is :
2 2 Vcc
Pdiss =
POUT − POUT (W)
Vout2−Vout1
Rfeed
Rin
π RL
Gv =
= 2
Vin
and the maximum value is obtained when:
Remark : Vout2 is in phase with Vin and Vout1 is
phased 180° with Vin. This means that the positive
terminal of the loudspeaker should be connected
to Vout2 and the negative to Vout1.
∂Pdiss
= 0
∂POUT
and its value is:
■ Low and high frequency response
2Vcc2
π2RL
Pdissmax =
(W)
In the low frequency region, C starts to have an
IN
effect. C forms with R a high-pass filter with a
IN
IN
-3dB cut off frequency .
Remark : This maximum value is only dependent
upon power supply voltage and load values.
1
FCL
=
(Hz)
2πRinCin
27/32
TS419-TS421
The efficiency is the ratio between the output
power and the power supply
Due to process tolerances, the range of the
wake-up time is :
0.12xCb < T
< 0.18xC (s) with C in µF
B B
POUT
π VPEAK
WU
η =
=
Psupply
4Vcc
Note : When the standby command is set, the time
to put the device in shutdown mode is a few
microseconds.
The maximum theoretical value is reached when
Vpeak = Vcc, so
■ Pop performance
π
= 78.5%
Pop performance is intimately linked with the size
of the input capacitor Cin and the bias voltage
bypass capacitor C .
4
■ Decoupling of the circuit
B
Two capacitors are needed to bypass properly the
TS419/TS421. A power supply bypass capacitor
The size of C is dependent on the lower cut-off
frequency and PSRR values requested. The size
IN
C and a bias voltage bypass capacitor C .
S
B
of C is dependent on THD+N and PSRR values
B
C has particular influence on the THD+N in the
requested at lower frequencies.
S
high frequency region (above 7kHz) and an
indirect influence on power supply disturbances.
With 1µF, you can expect similar THD+N
performances to those shown in the datasheet.
Moreover, C determines the speed with which the
amplifier turns ON. The slower the speed is, the
softer the turn ON noise is.
B
The charge time of C is directly proportional to
the internal generator resistance 150kΩ..
In the high frequency region, if C is lower than
1µF, it increases THD+N and disturbances on the
power supply rail are less filtered.
B
S
Then, the charge time constant for C is
B
τ = 150kΩxC (s)
On the other hand, if C is higher than 1µF, those
B
B
S
As C is directly connected to the non-inverting
disturbances on the power supply rail are more
filtered.
B
input (pin 2 & 3) and if we want to minimize, in
amplitude and duration, the output spike on Vout1
(pin 5), C must be charged faster than C . The
C
has an influence on THD+N at lower
B
IN
B
frequencies, but its function is critical to the final
result of PSRR (with input grounded and in the
lower frequency region).
equivalent charge time constant of C is:
IN
τ
= (Rin+Rfeed)xC (s)
IN
IN
Thus we have the relation:
< τ (s)
If C is lower than 1µF, THD+N increases at lower
τ
B
IN
B
frequencies and PSRR worsens.
Proper respect of this relation allows to minimize
the pop noise.
If C is higher than 1µF, the benefit on THD+N at
lower frequencies is small, but the benefit to PSRR
is substantial.
B
Remark : Minimizing C and C benefits both the
IN
B
pop phenomena, and the cost and size of the
application.
Note that C has a non-negligible effect on PSRR
IN
at lower frequencies. The lower the value of C ,
IN
the higher the PSRR.
■ Application : Differential inputs BTL power
amplifier.
■ Wake-up Time: T
WU
The schematic on figure 98, shows how to design
the TS419/21 to work in a differential input mode.
When standby is released to put the device ON,
the bypass capacitor C will not be charged
B
immediatly. As C is directly linked to the bias of
B
R 2
the amplifier, the bias will not work properly until
Thegainoftheamplifieris:
G VDIFF = 2
the C voltage is correct. The time to reach this
R 1
B
voltage is called wake-up time or T
equal to:
and typically
In order to reach optimal
performances of the differential function, R and
WU
1
T
=0.15xC (s) with C in µF.
B B
R should be matched at 1% max.
WU
2
28/32
TS419-TS421
Fig. 98 : Differential Input Amplifier
Configuration
Note : This formula is true only if:
1
FCB
=
(Hz )
942000 × CB
is ten times lower than F .
L
The following bill of material is an example of a
differential amplifier with a gain of 2 and a -3dB
lower cuttoff frequency of about 80Hz.
Components :
Designator
Part Type
R1
R2
C
20k / 1%
20k / 1%
100nF
Input capacitance C can be calculated by the
following formula using the -3dB lower frequency
C =C
1µF
B
S
required. (F is the lower frequency required)
U1
TS419/21
L
1
C ≈
(F )
2π R1 FL
29/32
TS419-TS421
PACKAGE MECHANICAL DATA
SO-8 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
MIN.
MAX.
A
A1
A2
B
1.35
1.75
0.053
0.069
0.10
1.10
0.33
0.19
4.80
3.80
0.25
1.65
0.51
0.25
5.00
4.00
0.04
0.010
0.065
0.020
0.010
0.197
0.157
0.043
0.013
0.007
0.189
0.150
C
D
E
e
1.27
0.050
H
5.80
0.25
0.40
6.20
0.50
1.27
0.228
0.010
0.016
0.244
0.020
0.050
h
L
k
˚ (max.)
8
ddd
0.1
0.04
0016023/C
30/32
TS419-TS421
PACKAGE MECHANICAL DATA
31/32
TS419-TS421
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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