TS4148RZG [TSC]

150mW High Speed SMD Switching Diode; 为150mW高速贴片开关二极管
TS4148RZG
型号: TS4148RZG
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

150mW High Speed SMD Switching Diode
为150mW高速贴片开关二极管

二极管 开关 光电二极管
文件: 总2页 (文件大小:157K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TS4148 RZG  
150mW High Speed SMD Switching Diode  
Small Signal Diode  
0603  
A
D
B
C
Features  
—Designed for mounting on small surface.  
—Extremely thin/leadless package  
—High mounting capability,strong surage with stand,  
high reliability.  
—Pb free version and RoHS compliant  
—Halogen free  
E
Unit (mm)  
Min Max  
Unit (inch)  
Min Max  
Mechanical Data  
—Case :0603 standard package, molded plastic  
Dimensions  
A
B
C
D
E
1.60 1.80 0.063 0.071  
0.80 1.00 0.031 0.039  
0.70 0.85 0.027 0.033  
—Terminal: Gold plated, solderable  
per MIL-STD-750, method 2026 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
Typ. 0.45  
Typ. 0.70  
Typ. 0.018  
Typ. 0.028  
—Weight : 0.003 gram (approximately)  
Ordering Information  
Part No.  
Packing  
Package  
0603  
TS4148 RZG  
4Kpcs / 7" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
Units  
mW  
V
Power Dissipation  
150  
100  
75  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Reverse Voltage  
Repetitive Peak Forward Current  
Mean Forward Current  
VRSM  
VRRM  
IFRM  
V
300  
150  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current  
Pulse Width=  
IFSM  
4.0  
1.0  
A
1 μsec  
Pulse Width=  
1 msec  
Thermal Resistance (Junction to Ambient) (Note 1)  
Junction and Storage Temperature Range  
RθJA  
666  
°C/W  
°C  
TJ, TSTG  
-40 to + 125  
Electrical Characteristics  
Type Number  
Symbol  
V(BR)  
Min  
Max  
75  
Units  
V
-
-
-
-
Reverse Breakdown Voltage  
Forward Voltage  
(Note 2)  
VF  
1.00  
25  
V
IF=  
50mA  
20V  
nA  
μA  
pF  
ns  
VR=  
VR=  
Reverse Leakage Current  
IR  
2.5  
4.0  
4
75V  
CJ  
Junction Capacitance  
VR=0, f=1.0MHz  
(Note3)  
Trr  
Reverse Recovery Time  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Notes:2. Test Condition : IR=100μA  
Notes:3. Test Condition : IF=IR=30mA, RL=100, IRR=3mA  
Version : D10  
TS4148 RZG  
150mW High Speed SMD Switching Diode  
Small Signal Diode  
Rating and Sharacteristic Curves  
FIG 1 Typical Forward Characteristics  
FIG 2 Reverse Current vs Reverse Voltage  
100  
1000  
100  
10  
1
Ta=25°C  
Ta=25°C  
10  
1
0.1  
0.01  
0.1  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
120  
Reverse Voltage (V)  
Instantaneous Forward Voltage (V)  
FIG 3 Admissible Power Dissipation Curve  
FIG 4 Typical Junction Capacitance  
150  
120  
90  
60  
30  
0
5
4
3
2
1
0
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
Reverse Voltage (V)  
Ambient Temperature (°C)  
FIG 5 Forward Resistance vs. Forward Current  
10000  
1000  
100  
10  
1
0
0
1
10  
100  
Forward Current (mA)  
Version : D10  

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