TS4148RW [TSC]
350mW High Speed SMD Switching Diode; 350mW的高速贴片开关二极管
| 型号： | TS4148RW |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 350mW High Speed SMD Switching Diode |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS4148 RW
350mW High Speed SMD Switching Diode
Small Signal Diode
1005
A
D
B
C
Features
Designed for mounting on small surface.
Extremely thin/leadless package
High mounting capability,strong surage with stand,
high reliability.
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
E
Unit (mm)
Min Max
Unit (inch)
Min Max
Mechanical Data
Case :1005 standard package, molded plastic
Dimensions
A
B
C
D
E
2.40 2.60 0.095 0.102
1.10 1.30 0.043 0.051
0.70 0.90 0.027 0.035
Terminal: Gold plated, solderable
per MIL-STD-750, method 2026 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Typ. 0.50
Typ. 1.00
Typ. 0.020
Typ. 0.040
Weight : 0.006 gram (approximately)
Ordering Information
Part No.
Packing
Package
1005
TS4148 RW
4Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
Units
mW
V
Power Dissipation
350
100
75
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
VRSM
VRRM
IFRM
V
300
150
mA
mA
IO
Non-Repetitive Peak Forward Surge Current
Pulse Width=
IFSM
4.0
1.0
A
1 μsec
Pulse Width=
1 msec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
500
°C/W
°C
TJ, TSTG
-40 to + 125
Electrical Characteristics
Type Number
Symbol
V(BR)
Min
Max
75
Units
V
-
-
-
-
Reverse Breakdown Voltage
Forward Voltage
(Note 2)
VF
1.00
25
V
IF=
50mA
20V
nA
μA
pF
ns
VR=
VR=
Reverse Leakage Current
IR
2.5
4.0
4
75V
CJ
Junction Capacitance
VR=0, f=1.0MHz
(Note3)
Trr
Reverse Recovery Time
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IR=100μA
Notes:3. Test Condition : IF=IR=30mA, RL=100Ω, IRR=3mA
Version : C09
TS4148 RW
350mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Reverse Current vs Reverse Voltage
100
1000
100
10
1
Ta=25°C
Ta=25°C
10
1
0.1
0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
FIG 3 Admissible Power Dissipation Curve
FIG 4 Typical Junction Capacitance
350
280
210
140
70
5
4
3
2
1
0
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Reverse Voltage (V)
Ambient Temperature (°C)
FIG 5 Forward Resistance vs. Forward Current
10000
1000
100
10
1
0
0
1
10
100
Forward Current (mA)
Version : C09
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