TS4148RY [TSC]
400mW High Speed SMD Switching Diode; 400mW的高速贴片开关二极管型号: | TS4148RY |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | 400mW High Speed SMD Switching Diode |
文件: | 总2页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TS4148 RY
400mW High Speed SMD Switching Diode
Small Signal Diode
0805
B
Features
Designed for mounting on small surface.
Extremely thin/leadless package
High mounting capability,strong surage with stand,
high reliability.
C
D
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
E
Unit (mm)
Min Max
Unit (inch)
Min Max
Mechanical Data
Case :0805 standard package, molded plastic
Dimensions
A
B
C
D
E
1.80 2.20 0.071 0.086
1.05 1.45 0.410 0.570
0.25 0.65 0.010 0.026
0.75 0.95 0.029 0.037
1.30 0.90 0.051 0.034
Terminal: Gold plated, solderable
per MIL-STD-750, method 2026 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 0.006 gram (approximately)
Ordering Information
Part No.
Packing
Package
0805
TS4148 RY
5Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
400
Units
mW
V
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
VRSM
VRRM
IFRM
100
75
V
300
150
mA
mA
IO
Non-Repetitive Peak Forward Surge Current
Tp=1sec square waveform
IFSM
0.5
2.0
A
8.3ms single half sine waveform
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
375
°C/W
°C
TJ, TSTG
-65 to + 175
Electrical Characteristics
Type Number
Symbol
V(BR)
Min
Max
75
Units
V
-
-
-
-
Reverse Breakdown Voltage
Forward Voltage
(Note 2)
VF
1.00
25
V
IF=
10mA
20V
nA
μA
pF
ns
VR=
VR=
Reverse Leakage Current
IR
5
75V
CJ
4.0
4
Junction Capacitance
VR=0, f=1.0MHz
(Note3)
Trr
Reverse Recovery Time
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IR=100μA
Notes:3. Test Condition : IF=10mA, IR=1mA,RL=100Ω
Version : E09
TS4148 RY
400mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Reverse Current vs Reverse Voltage
100
1000
100
10
1
Ta=25°C
Ta=25°C
10
Ta=100°
1
0.1
0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
FIG 3 Admissible Power Dissipation Curve
FIG 4 Typical Junction Capacitance
500
400
300
200
100
0
1.2
1.1
1
0.9
0.8
0.7
0.6
0
25
50
75
100
125
150
175
200
0
2
4
6
8
10
Reverse Voltage (V)
Ambient Temperature (°C)
FIG 5 Forward Resistance vs. Forward Current
10000
1000
100
10
1
0
0
1
10
100
Forward Current (mA)
Version : E09
相关型号:
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