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TIM5359-16 [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET
TIM5359-16
型号： TIM5359-16
厂家： TOSHIBA    TOSHIBA
描述：

MICROWAVE POWER GaAs FET
微波功率GaAs FET

晶体 射频场效应晶体管 微波 CD 局域网
文件： 总4页 (文件大小：150K)
中文：  中文翻译
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相关型号：

TIM5359-16EL

 TRANSISTOR RF POWER, FET, FET RF Power

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TOSHIBA

TIM5359-16L

 TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED PACKAGE-2, FET RF Power

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TOSHIBA

TIM5359-16SL

 MICROWAVE POWER GaAs FET

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TIM5359-16UL

 MICROWAVE POWER GaAs FET

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TIM5359-35SL

 MICROWAVE POWER GaAs FET

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TIM5359-4

 POWER GAAS FET

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TOSHIBA

TIM5359-45SL

 MICROWAVE SEMICONDUCTOR

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TOSHIBA

TIM5359-4SL

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5359-4UL

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5359-60SL

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5359-8

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5359-80SL

 IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level

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TOSHIBA

TIM5359-8SL

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5359-8UL

 HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz

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TOSHIBA

TIM5867-15UL

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5867-30UL

 TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power

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TOSHIBA

TIM5867-8UL

 TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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TOSHIBA

TIM5964-12UL

 MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5964-12UL_09

 HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz

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TOSHIBA

TIM5964-16L

 TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA
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