TIM5359-16L [TOSHIBA]
TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED PACKAGE-2, FET RF Power;
| 型号： | TIM5359-16L |
| 厂家： | 
TOSHIBA |
| 描述： | TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED PACKAGE-2, FET RF Power 晶体 射频场效应晶体管 微波 CD 局域网 |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5359-16SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 31.5dBm
Single Carrier Level
HIGH GAIN
G1dB=8.5dB at 5.3GHz to 5.9GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
HIGH POWER
P1dB=42.5dBm at 5.3GHz to 5.9GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
°
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
P1dB
dBm 41.5 42.5
⎯
G1dB
dB
7.5
8.5
4.4
⎯
VDS=10V
f= 5.3 to 5.9GHz
IDS1
ΔG
ηadd
IM3
A
dB
%
5.0
±0.8
⎯
⎯
Gain Flatness
⎯
⎯
-42
⎯
35
Power Added Efficiency
3rd Order Intermodulation
Distortion
Two-Tone Test
Po=31.5dBm
dBc
-45
⎯
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Drain Current
IDS2
A
4.4
5.0
80
⎯
⎯
C
°
Channel Temperature Rise
ΔTch
⎯
Recommended Gate Resistance(Rg) : 100 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Transconductance
Gm
VDS= 3V
mS
V
3600
-2.5
10.5
⎯
⎯
-1.0
⎯
⎯
-4.0
⎯
IDS= 6.0A
VDS= 3V
IDS= 60mA
VDS= 3V
Pinch-off Voltage
VGSoff
IDSS
Saturated Drain Current
A
VGS= 0V
Gate-Source Breakdown
Voltage
VGSO
Rth(c-c)
IGS= -200μA
V
-5
⎯
C/W
Thermal Resistance
Channel to Case
1.5
2.0
°
⎯
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
TIM5359-16SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
°
CHARACTERISTICS
Drain-Source Voltage
SYMBOL
VDS
VGS
IDS
UNIT
V
RATING
15
-5
Gate-Source Voltage
Drain Current
V
A
14.0
Total Power Dissipation (Tc= 25 C)
PT
W
75
°
C
Channel Temperature
Storage Temperature
Tch
175
°
C
°
Tstg
-65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM5359-16SL
RF PERFORMANCE
Output Power (Pout) vs. Frequency
VDS=10V
IDS≅4.4A
Pin=34.0dBm
43
42
41
40
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
Output Power(Pout) vs. Input Power(Pin)
45
44
43
42
41
40
39
38
37
36
freq.=5.9GHz
VDS=10V
IDS≅4.4A
80
70
60
50
40
30
20
10
27
29
31
33
35
37
Pin(dBm)
3
TIM5359-16SL
Power Dissipation vs. Case Temperature
90
60
30
0
0
40
80
Tc (°C)
120
160
200
IM3 vs. Output Power Characteristics
-10
-20
-30
-40
-50
-60
VDS=10V
IDS≅4.4A
freq.=5.9GHz
Δf=5MHz
27
29
31
Pout(dBm) @Single carrier level
33
35
37
4
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