TIM5359-4SL [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET


型号：	TIM5359-4SL
厂家：	TOSHIBA
描述：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 晶体射频场效应晶体管微波 CD 放大器局域网
文件：	总4页 (文件大小：194K)
中文：	中文翻译
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MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM5359-4SL

TECHNICAL DATA

FEATURES

LOW INTERMODULATION DISTORTION

IM3=-45 dBc at Pout= 25.5dBm

Single Carrier Level

HIGH GAIN

G1dB=9.5dB at 5.3GHz to 5.9GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

HIGH POWER

P1dB=36.5dBm at 5.3GHz to 5.9GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 35.5 36.5

⎯

G1dB

8.5

9.5

1.1

⎯

VDS=10V

f= 5.3 to 5.9GHz

IDS1

ΔG

η_add

IM3

1.3

±0.6

⎯

Gain Flatness

⎯

Power Added Efficiency

3^rdOrder Intermodulation

Distortion

Two-Tone Test

Po=25.5dBm

dBc

-42

-45

⎯

(Single Carrier Level)

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

Drain Current

IDS2

1.1

1.3

⎯

Channel Temperature Rise

ΔTch

⎯

Recommended Gate Resistance(Rg) : 150 Ω (Max.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

= 3V

UNIT MIN. TYP. MAX.

Transconductance

900

-2.5

2.6

⎯

-1.0

⎯

-4.0

⎯

IDS= 1.5A

VDS= 3V

IDS= 15mA

VDS= 3V

VGS= 0V

Pinch-off Voltage

VGSoff

IDSS

Saturated Drain Current

Gate-Source Breakdown

Voltage

VGSO

Rth(c-c)

IGS= -50μA

-5

⎯

C/W

Thermal Resistance

Channel to Case

4.5

6.5

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jul. 2006

TIM5359-4SL

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

Drain-Source Voltage

SYMBOL

VDS

VGS

IDS

UNIT

RATING

-5

Gate-Source Voltage

Drain Current

3.5

Total Power Dissipation (Tc= 25 C)

23.1

Channel Temperature

Storage Temperature

Tch

175

Tstg

-65 to +175

PACKAGE OUTLINE (2-11D1B)

Unit in mm

(1) Gate

(2) Source

(3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

TIM5359-4SL

RF PERFORMANCE

Output Power (Pout) vs. Frequency

VDS=10V

IDS≅1.1A

Pin=27.0dBm

5.3

5.4

5.5

5.6

5.7

5.8

5.9

Frequency (GHz)

Output Power(Pout) vs. Input Power(Pin)

freq.=5.9GHz

VDS=10V

IDS≅1.1A

Pout

ηadd

Pin (dBm)

TIM5359-4SL

Power Dissipation vs. Case Temperature

120

Tc (℃)

160

200

IM3 vs. Output Power Characteristics

-10

-20

-30

-40

-50

-60

VDS=10V

IDS≅1.1A

freq.=5.9GHz

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA