TIM5359-60SL [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET


型号：	TIM5359-60SL
厂家：	TOSHIBA
描述：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 晶体射频场效应晶体管微波 CD 放大器局域网
文件：	总4页 (文件大小：159K)
中文：	中文翻译
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MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM5359-60SL

TECHNICAL DATA

FEATURES

LOW INTERMODULATION DISTORTION HIGH GAIN

IM3=-45 dBc at Pout= 36.5dBm

Single Carrier Level

HIGH POWER

G1dB=9.0dB at 5.3GHz to 5.9GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

P1dB=48.0dBm at 5.3GHz to 5.9GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 47.0 48.0

⎯

G1dB

VDS=10V

f = 5.3 to 5.9GHz

IDSset=9.5A

8.0

9.0

⎯

IDS1

ΔG

η_add

IM3

13.2 15.0

⎯

Gain Flatness

±0.8

⎯

Power Added Efficiency

3rd Order Intermodulation

Distortion

Two-Tone Test

Po=36.5dBm

dBc

-42

-45

⎯

(Single Carrier Level)

Drain Current

IDS2

11.8

100

⎯

(VDS X IDS +Pin-P1dB)

X Rth(c-c)

Channel Temperature Rise

ΔTch

Recommended Gate Resistance(Rg) : 28 Ω (Max.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

UNIT MIN. TYP. MAX.

Transconductance

-1.8

⎯

-1.0

⎯

-3.0

⎯

IDS= 12.0A

VDS= 3V

IDS= 200mA

VDS= 3V

Pinch-off Voltage

VGSoff

IDSS

Saturated Drain Current

VGS= 0V

Gate-Source Breakdown

Voltage

VGSO

Rth(c-c)

IGS= -1.0mA

-5

⎯

C/W

Thermal Resistance

Channel to Case

0.6

0.8

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jul. 2006

TIM5359-60SL

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

Drain-Source Voltage

SYMBOL

VDS

VGS

IDS

UNIT

RATING

-5

Gate-Source Voltage

Drain Current

Total Power Dissipation (Tc= 25 C)

187.5

175

Channel Temperature

Storage Temperature

Tch

Tstg

-65 to +175

PACKAGE OUTLINE (2-16G1B)

Unit in mm

(1) Gate

(2) Source

(3) Drain

HANDLING PRECAUTIONS FOR PACKAGE MODEL

Soldering iron should be grounded and the operating time should not exceed 10 seconds

at 260°C.

TIM5359-60SL

RF PERFORMANCE

Output Power (Pout) vs. Frequency

VDS=10V

IDS≅13.2A

Pin=39.0dBm

5.3

5.4

5.5

5.6

5.7

5.8

5.9

Frequency(GHz)

Output Power(Pout) vs. Input Power(Pin)

freq.=5.9GHz

VDS=10V

IDSset≅9.5A

Pout

ηadd

Pin(dBm)

TIM5359-60SL

Power Dissipation(PT) vs. Case Temperature(Tc)

200

100

200

120

160

Tc( C )

IM3 vs. Power Characteristics

-10

VDS=10V

IDSset≅9.5A

freq.=5.9GHz

Δf=5MHz

-20

-30

-40

-50

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA

TIM5964-16LA

暂无描述

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TOSHIBA

TIM5964-16LB

TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA