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TIM5359-8SL [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET

TIM5359-8SL


型号：	TIM5359-8SL
厂家：	TOSHIBA
描述：	MICROWAVE POWER GaAs FET 微波功率GaAs FET 晶体射频场效应晶体管微波 CD 放大器局域网
文件：	总2页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

TIM5359-8UL

HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz

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TOSHIBA

TIM5867-15UL

MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5867-30UL

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA05A, 2 PIN, FET RF Power

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TOSHIBA

TIM5867-8UL

TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power

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TOSHIBA

TIM5964-12UL

MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5964-12UL_09

HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz

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TOSHIBA

TIM5964-16L

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA

TIM5964-16LA

暂无描述

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TOSHIBA

TIM5964-16LB

TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA

TIM5964-16SL

MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5964-16SL-251

TRANSISTOR C BAND, Si, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 2 PIN, FET RF Power

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TOSHIBA

TIM5964-16SL-422

IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz

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TOSHIBA

TIM5964-16UL

MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5964-16UL_09

HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz

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TOSHIBA

TIM5964-25UL

MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5964-25UL_09

HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz

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TOSHIBA

TIM5964-30SL

MICROWAVE POWER GaAs FET

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TOSHIBA

TIM5964-30UL

TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power

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TOSHIBA

TIM5964-35SL

TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power

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TOSHIBA

TIM5964-35SLA

MICROWAVE POWER GaAs FET

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TOSHIBA

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