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TIM5359-35SL [TOSHIBA]

MICROWAVE POWER GaAs FET; 微波功率GaAs FET
TIM5359-35SL
型号： TIM5359-35SL
厂家： TOSHIBA    TOSHIBA
描述：

MICROWAVE POWER GaAs FET
微波功率GaAs FET

微波
文件： 总4页 (文件大小：471K)
中文：  中文翻译
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MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM5359-35SL  
TECHNICAL DATA  
FEATURES  
n LOW INTERMODULATION DISTORTION  
n HIGH GAIN  
IM3=-45 dBc at Pout= 35.0dBm  
G1dB=8.5dB at 5.3GHz to 5.9GHz  
Single Carrier Level  
n HIGH POWER  
n BROADBAND INTERNALLY MATCHED  
n HERMETICALLY SEALED PACKAGE  
P1dB=45.5dBm at 5.3GHz to 5.9GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P1dB  
dBm 45.0 45.5  
¾
VDS= 10V  
f = 5.3 to 5.9GHz  
G1dB  
dB  
7.5  
8.5  
¾
IDS1  
DG  
hadd  
IM3  
A
dB  
%
8.0  
¾
9.0  
±0.8  
¾
¾
¾
Gain Flatness  
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
38  
-45  
¾
Two Tone Test  
Po=35.0dBm  
dBc  
-42  
¾
(Single Carrier Level)  
Drain Current  
IDS2  
A
8.0  
9.0  
¾
¾
(VDS X IDS + Pin – P1dB)  
X Rth(c-c)  
Channel Temperature Rise  
DTch  
C
°
100  
¾
Recommended Gate Resistance(Rg) : 28 W (Max.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )  
°
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
V
= 3V  
= 10.5A  
mS  
6500  
-2.5  
20  
DS  
¾
¾
I
DS  
Pinch-off Voltage  
VGSoff  
IDSS  
VDS= 3V  
IDS= 140mA  
VDS= 3V  
VGS= 0V  
V
-1.0  
-4.0  
26  
Saturated Drain Current  
A
¾
-5  
¾
IGS= -420 A  
Gate-Source Breakdown  
Voltage  
VGSO  
Rth(c-c)  
m
V
¾
¾
C/W  
Thermal Resistance  
Channel to Case  
°
1.0  
1.3  
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Rev. Jul., 2006  
TIM5359-35SL  
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )  
°
CHARACTERISTICS  
Drain-Source Voltage  
SYMBOL  
UNIT  
V
RATING  
V
DS  
15  
-5  
Gate-Source Voltage  
Drain Current  
VGS  
IDS  
PT  
V
A
20  
Total Power Dissipation (Tc= 25 C)  
W
115.4  
175  
°
C
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
°
°
C
-65 to +175  
PACKAGE OUTLINE (2-16G1B)  
0.7±0.15  
Unit in mm  
4 – C1.0  
(1) Gate  
(1)  
(2) Source  
(3) Drain  
(2)  
(2)  
(3)  
20.4±0.3  
24.5 MAX.  
16.4 MAX.  
HANDLING PRECAUTIONS FOR PACKAGE MODEL  
Soldering iron should be grounded and the operating time should not exceed 10 seconds  
at 260°C.  
2
TIM5359-35SL  
RF PERFORMANCES  
Output Power (Pout) vs. Frequency  
VDS=10V  
IDS@8.5A  
Pin=37.0dBm  
46  
45  
44  
43  
5.3  
5.4  
5.5  
5.6  
5.7  
5.8  
5.9  
Frequency (GHz)  
Output Power(Pout) vs. Input Power(Pin)  
freq.=5.9GHz  
VDS=10V  
IDS=8.5A  
80  
70  
60  
50  
40  
30  
20  
10  
46  
45  
44  
43  
42  
41  
40  
39  
Pout  
hadd  
32  
34  
36  
38  
Pin(dBm)  
3
TIM5359-35SL  
Power Dissipation(PT) vs. Case Temperature(Tc)  
120  
100  
80  
60  
40  
20  
200  
0
40  
80  
120  
160  
Tc( C )  
°
IM3 vs. Power Characteristics  
-10  
VDS=10V  
IDS@8.5A  
freq.=5.9GHz  
-20  
Df=5MHz  
-30  
-40  
-50  
-60  
30  
32  
34  
36  
38  
40  
Pout(dBm) @Single carrier level  
4

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