STP3NB60FP [STMICROELECTRONICS]

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET; N - 沟道增强型MOSFET的PowerMESH
STP3NB60FP
型号: STP3NB60FP
厂家: ST    ST
描述:

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
N - 沟道增强型MOSFET的PowerMESH

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STP3NB60  
STP3NB60FP  
N - CHANNEL ENHANCEMENT MODE  
PowerMESH  
MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP3NB60  
STP3NB60FP  
600 V  
600 V  
<3.6 Ω  
< 3.6 Ω  
3.3 A  
2.2 A  
TYPICAL RDS(on) = 3.3 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
1
2
1
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, SGS-Thomson has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP3NB60FP  
Unit  
STP3NB60  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
600  
600  
± 30  
V
V
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
3.3  
2.1  
2.2  
1.4  
A
ID  
A
I
DM()  
13.2  
80  
13.2  
35  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
Derating Factor  
0.64  
4.5  
0.28  
4.5  
W/oC  
V/ns  
V
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
2000  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/9  
March 1998  
STP3NB60/FP  
THERMAL DATA  
TO-220  
TO220-FP  
Rthj-case Thermal Resistance Junction-case  
Max  
1.56  
3.57  
oC/W  
Rthj-amb Thermal Resistance Junction-ambient  
Rthc-sink Thermal Resistance Case-sink  
Max  
Typ  
62.5  
0.5  
300  
oC/W  
oC/W  
oC  
Tl  
Maximum Lead Temperature For Soldering Purpose  
AVALANCHE CHARACTERISTICS  
Symbol  
Parameter  
Max Value  
Unit  
IAR  
Avalanche Current, Repetitive or Not-Repetitive  
3.3  
A
(pulse width limited by Tj max, δ < 1%)  
EAS  
Single Pulse Avalanche Energy  
100  
mJ  
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
OFF  
Symbol  
V(BR)DSS Drain-source  
Breakdown Voltage  
Zero Gate Voltage  
Drain Current (VGS = 0) VDS = Max Rating  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
600  
V
ID = 250 µA VGS = 0  
IDSS  
IGSS  
VDS = Max Rating  
1
50  
µA  
µA  
o
Tc = 125 C  
Gate-body Leakage  
Current (VDS = 0)  
± 100  
nA  
VGS = ± 30 V  
ON ( )  
Symbol  
Parameter  
Test Conditions  
VDS = VGS ID = 250 µA  
Min.  
Typ.  
Max.  
Unit  
VGS(th)  
Gate Threshold  
Voltage  
3
4
5
V
RDS(on)  
ID(on)  
Static Drain-source On VGS = 10V ID = 1.6 A  
Resistance  
3.3  
3.6  
On State Drain Current VDS > ID(on) x RDS(on)max  
VGS = 10 V  
3.3  
A
DYNAMIC  
Symbol  
Parameter  
Forward  
Test Conditions  
VDS > ID(on) x RDS(on)max ID = 1.6 A  
Min.  
Typ.  
Max.  
Unit  
gfs ( )  
1.2  
2
S
Transconductance  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
VDS = 25 V f = 1 MHz VGS = 0  
400  
57  
7
520  
77  
9
pF  
pF  
pF  
2/9  
STP3NB60/FP  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Turn-on Time  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(on)  
tr  
VDD = 300 V ID = 1.6 A  
11  
7
17  
11  
ns  
ns  
Rise Time  
RG = 4.7 Ω  
VGS = 10 V  
(see test circuit, figure 3)  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = 480 V ID = 3.3 A VGS = 10 V  
15  
6.2  
5.6  
22  
nC  
nC  
nC  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
tr(Voff)  
tf  
tc  
Off-voltage Rise Time  
Fall Time  
Cross-over Time  
VDD = 480 V ID = 3.3 A  
RG = 4.7 VGS = 10 V  
(see test circuit, figure 5)  
11  
13  
18  
16  
18  
25  
ns  
ns  
ns  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ISD  
ISDM ()  
Source-drain Current  
Source-drain Current  
(pulsed)  
3.3  
13.2  
A
A
VSD ( ) Forward On Voltage  
ISD = 3.3 A VGS = 0  
1.6  
V
trr  
Reverse Recovery  
Time  
Reverse Recovery  
Charge  
Reverse Recovery  
Current  
500  
2.1  
8.5  
ns  
ISD = 3.3 A di/dt = 100 A/µs  
VDD = 100 V  
(see test circuit, figure 5)  
Tj = 150 oC  
Qrr  
µC  
IRRM  
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
() Pulse width limited by safe operating area  
Safe Operating Area for TO-220  
Safe Operating Area for TO-220FP  
3/9  
STP3NB60/FP  
Thermal Impedance for TO-220  
Thermal Impedance forTO-220FP  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
4/9  
STP3NB60/FP  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
Normalized Gate Threshold Voltage vs  
Temperature  
Normalized On Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
5/9  
STP3NB60/FP  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/9  
STP3NB60/FP  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
7/9  
STP3NB60/FP  
TO-220FP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
15.9  
9
30.6  
10.6  
16.4  
9.3  
1.126  
0.385  
0.626  
0.354  
0.118  
1.204  
0.417  
0.645  
0.366  
0.126  
3
3.2  
L3  
L6  
L7  
¯
1 2 3  
L4  
L2  
8/9  
STP3NB60/FP  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
. . .  
9/9  

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